DMN2005LPK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Lead-free Green UNDER DEVELOPMENT Features · · · · · · · · Low On-Resistance Low Gate Threshold Voltage DFN1006-3 Fast Switching Speed G Low Input/Output Leakage H Dim Min Max Typ A 0.95 1.075 1.00 B 0.55 0.675 0.60 C 0.45 0.55 0.50 D 0.20 0.30 0.25 G 0.47 0.53 0.50 H 0 0.05 0.03 K 0.10 0.20 0.15 L 0.20 0.30 0.25 M ¾ ¾ 0.35 N ¾ ¾ 0.40 Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) A "Green" Device (Note 4) ESD Protected Gate K M B C Mechanical Data · · D Case: DFN1006-3 N L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · Marking: See Last Page G All Dimensions in mm D Terminals Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 S TOP VIEW Ordering & Date Code Information: See Last Page Drain Body Diode Gate Gate Protection Diode ESD protected Source EQUIVALENT CIRCUIT Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V ID 200 250 mA Drain Current per element (Note 1) Continuous Pulsed (Note 3) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: Pd 200 mW RqJA 625 °C/W Tj, TSTG -65 to +150 °C 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width £10mS, Duty Cycle £1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30836 Rev. 3 - 1 1 of 4 www.diodes.com DMN2005LPK ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 ¾ ¾ V VGS = 0V, ID = 100mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 10 mA VDS = 17V, VGS = 0V Gate-Source Leakage IGSS ¾ ¾ ±5 mA VGS = ±8V, VDS = 0V VGS(th) 0.53 ¾ 1.2 V VDS = VGS, ID = 100mA RDS (ON) ¾ ¾ ¾ ¾ ¾ 0.9 0.85 1.2 2.4 2.5 1.5 1.7 1.7 3.5 3.5 W VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA |Yfs| 40 ¾ ¾ mS OFF CHARACTERISTICS (per element) (Note 5) ON CHARACTERISTICS (per element) (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Notes: VDS = 3V, ID = 10mA 5. Short duration test pulse used to minimize self-heating effect. 1000 0.9 900 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (A) 800 0.6 TBD 0.3 700 600 TBD 500 400 300 200 100 0 0.4 0 0 1 2 5 4 3 1 0.8 1.2 1.6 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT UNDER DEVELOPMENT 1 0.9 0.8 0.7 0.6 TBD TBD 0.5 0.4 0.3 0.2 0.1 0 -75 0.1 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature DS30836 Rev. 3 - 1 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 2 of 4 www.diodes.com DMN2005LPK UNDER DEVELOPMENT 1 NEW PRODUCT 1.0 0.9 0.8 0.7 0.6 TBD TBD 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.6 0.4 2 0 1.0 0.8 6 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 0.5 0.9 0.4 0.8 0.7 0.3 TBD 0.6 TBD 0.2 0.5 0.4 0.1 0.3 0.2 0.4 0.2 0 0.6 0.8 1 0 -50 1.2 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE (° C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 10000 1 IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) -25 1000 100 TBD 10 1 0.1 0.1 TBD 0.01 0.001 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage DS30836 Rev. 3 - 1 3 of 4 www.diodes.com 0 1 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage DMN2005LPK 120 1 100 C, CAPACITANCE (pF) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) NEW PRODUCT UNDER DEVELOPMENT TBD 0.1 80 TBD 60 40 20 0.01 0 1 10 1000 100 0 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current Ordering Information Notes: 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation (Note 6) Device Packaging Shipping DMN2005LPK-7 DFN1006-3 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DM DM = Product Type Marking Code, Dot Denotes Collector Side IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30836 Rev. 3 - 1 4 of 4 www.diodes.com DMN2005LPK