SPICE MODEL: DMN2004K DMN2004K Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCEDNEW INFORMATION PRODUCT Features · · · · · · · · · Low On-Resistance: RDS(ON) SOT-23 Low Gate Threshold Voltage A Low Input Capacitance Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 G D 0.89 1.03 H E 0.45 0.60 G 1.78 2.05 D Fast Switching Speed B Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) C G TOP VIEW S E ESD Protected up to 2KV "Green" Device (Note 4) D Qualified to AEC-Q101 standards for High Reliability K J M L Mechanical Data H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 · · Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 L 0.45 0.61 M 0.085 0.180 · · Moisture sensitivity: Level 1 per J-STD-020C a 0° 8° · · · · Drain Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 All Dimensions in mm Gate Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page ESD protected up to 2KV Source EQUIVALENT CIRCUIT Weight: 0.008 grams (approximate) Maximum Ratings Gate Protection Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V ID 540 390 mA IDM 1.5 A Drain Current (Note 1) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 3) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. 2. 3. 4. Pd 350 mW RqJA 357 °C/W Tj, TSTG -65 to +150 °C Device mounted on FR-4 PCB. No purposefully added lead. Pulse width £10mS, Duty Cycle £1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30938 Rev. 2 - 2 1 of 4 www.diodes.com DMN2004K ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 20 ¾ ¾ V VGS = 0V, ID = 10mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 1 mA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS ¾ ¾ ±1 mA VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ¾ 1.0 V VDS = VGS, ID = 250mA RDS (ON) ¾ 0.4 0.5 0.7 0.55 0.70 0.9 W VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 ¾ ¾ ms Diode Forward Voltage (Note 5) VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 150 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 20 pF OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Notes: 1000 VGS = 2.2V VDS = 10V Pulsed 900 VGS = 2.0V 800 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (A) VDS = 16V, VGS = 0V f = 1.0MHz 5. Short duration test pulse used to minimize self-heating effect. 0.9 VGS = 1.8V 0.6 VGS = 1.6V VGS = 1.4V 0.3 700 600 500 400 TA = 150° C 300 200 TA = 85° C TA = -55° C 0 0.4 0 0 1 TA = 25° C 100 VGS = 1.2V 2 5 4 3 1 0.8 1.2 2 1.6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Electrical Characteristics 1 0.9 VDS = 10V 0.8 Pulsed VGS = 10V Pulsed ID = 1mA 0.7 TA = 125° C 0.6 TA = 150° C TA = 85° C 0.5 0.4 0.3 0.2 TA = -55° C 0.1 0 -75 TA = 25° C TA = 0° C TA = -25° C 0.1 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature DS30938 Rev. 2 - 2 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 2 of 4 www.diodes.com DMN2004K 1.0 1 TA = 25°C NEW PRODUCT VGS = 5V Pulsed 0.9 0.8 TA = 125° C TA = 150° C TA = 85° C 0.7 0.6 ID = 540mA 0.5 0.4 0.3 TA = -55° C TA = 25° C TA = 0° C 0.2 TA = -25° C 0.1 0 0.1 2 0 0.2 0.6 0.4 6 4 1.0 0.8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 0.5 Tj = 25°C 0.9 0.4 0.8 VGS = 1.8V VGS = 4.5V, ID = 540mA 0.7 0.3 0.6 VGS = 10V, ID = 280mA 0.2 0.5 VGS = 2.5V 0.4 0.1 VGS = 4.5V 0.3 0.2 0.4 0.2 0 0.8 0.6 1 0 -50 1.2 -25 0 25 50 100 75 125 150 Tj, JUNCTION TEMPERATURE (° C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 10000 1 1000 IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) VGS = 0V Tj = 150°C 100 Tj = 100°C 10 1 TA = 150° C 0.1 TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C TA = -25° C TA = -55° C 0.1 0.001 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage DS30938 Rev. 2 - 2 3 of 4 www.diodes.com 0 0.5 1 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage DMN2004K TA = -55° C VGS = 10V f = 1MHz VGS = 0V 100 Ciss TA = 25° C C, CAPACITANCE (pF) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA = 85° C 0.1 TA = 150° C 80 60 40 Coss 20 Crss 0.01 0 1 10 1000 100 0 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current Ordering Information Notes: 4 2 8 6 10 12 14 16 18 20 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation (Note 6) Device Packaging Shipping DMN2004K-7 SOT-23 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NAB YM NEW PRODUCT 120 1 NAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30938 Rev. 2 - 2 4 of 4 www.diodes.com DMN2004K