DIODES ZXMP3F37N8

ZXMP3F37N8
30V SO8 P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V)
RDS(on) (Ω)
ID(A)
-30
0.025 @ VGS=-10V
-10.7
0.041 @ VGS=-4.5V
Description
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance making it ideal for high
efficiency power management applications.
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
SO8 package
Applications
•
DC-DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
Ordering information
Device
ZXMP3F37N8TA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
500
S
D
S
D
S
D
G
D
Device marking
ZXMP 3F37
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ZXMP3F37N8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGS
±20
V
ID
-8.5
V
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C
@ VGS= -10V; TA=25°C
@ VGS= -10V; TL=25°C
Pulsed Drain current
(b)
(b)
-6.8
(a)
-6.4
(d)
-10.7
(c)
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
(b)
(c)
(a)
(b)
(d)
Operating and storage temperature range
IDM
-39.5
A
IS
-4.4
A
ISM
-39.5
A
PD
1.56
12.5
W
mW/°C
PD
2.8
22.2
W
mW/°C
PD
4.4
35.4
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
80
°C/W
RθJA
45
°C/W
RθJL
28.26
°C/W
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to lead
(a)
(b)
(d)
NOTES:
(a)
(b)
(c)
(d)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
Mounted on FR4 PCB measured at t ≤ 10 sec.
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
Thermal resistance from junction to solder-point (at the end of the drain lead).
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ZXMP3F37N8
Thermal characteristics
100
1.6
Max Power Dissipation (W)
-ID Drain Current (A)
RDS(on)
10 Limited
1
DC
100m
1s
100ms
10m
10ms
Single Pulse
T amb=25°C
1m
100m
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
1.4
25mm x 25mm
1oz FR4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
T amb=25°C
60
50
D=0.5
40
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
Single Pulse
T amb=25°C
10
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
© Diodes Incorporated 2008
100 120 140 160
100
1
100µ
1k
Pulse Width (s)
Issue 1 - August 2008
80
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
70
60
Temperature (°C)
Safe Operating Area
80
40
Pulse Power Dissipation
3
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ZXMP3F37N8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
-30
Zero Gate voltage Drain
current
IDSS
Gate-Body leakage
IGSS
Gate-Source threshold
voltage
VGS(th)
Static Drain-Source
( )
on-state resistance *
RDS(on)
Forward
( ) (†)
Transconductance *
gfs
Input capacitance
Typ.
Max.
Unit
Conditions
V
ID = -250μA, VGS=0V
-1.0
µA
VDS=-30V, VGS=0V
100
nA
VGS=±20V, VDS=0V
-2.5
V
ID= -250μA, VDS=VGS
0.025
0.041
Ω
VGS= -10V, ID= -7.1A
VGS= -4.5V, ID= -5.5A
18.6
S
VDS= -15V, ID= -7.1A
Ciss
1678
pF
Output capacitance
Coss
303
pF
Reverse transfer
capacitance
Crss
178
pF
Turn-on-delay time
td(on)
3.5
ns
Rise time
tr
4.9
ns
VDD= -15V, VGS= -10V
Turn-off delay time
td(off)
44
ns
Fall time
tf
28
ns
ID= -1A
RG ≅ 6.0Ω,
Dynamic
-1.3
(†)
Switching
VDS= -15V, VGS=0V
f=1MHz
(‡) (†)
Gate charge
Total Gate charge
Qg
31.6
nC
Gate-Source charge
Qgs
4.3
nC
Gate-Drain charge
Qgd
6.2
nC
*
VSD
-0.80
(‡)
trr
16.2
ns
Qrr
10
nC
VDS= -15V, VGS= -10V
ID= -7.1A
Source–Drain diode
Diode forward voltage
Reverse recovery time
( )
Reverse recovery charge
(‡)
-1.2
V
IS= -1.7A,VGS=0V
IS= -2.2A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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ZXMP3F37N8
Typical characteristics
T = 150°C
3.5V
4.5V
-ID Drain Current (A)
-ID Drain Current (A)
10V
3V
10
2.5V
1
VGS
T = 25°C
10V
3.5V
3V
10
2.5V
1
2V
0.1
VGS
0.1
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
T = 150°C
1
T = 25°C
0.1
2
3
-VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
10
T = 25°C
VGS
2.5V
3V
1
3.5V
0.1
4V
10V
0.01
0.1
1
10
-ID Drain Current (A)
On-Resistance v Drain Current
Issue 1 - August 2008
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VGS = 10V
ID = 7.1A
1.4
RDS(on)
1.2
1.0
0.8
VGS = VDS
0.6
0.4
-50
VGS(th)
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
VDS = 10V
Normalised RDS(on) and VGS(th)
1.6
10
10
1
T = 150°C
T = 25°C
0.1
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5
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ZXMP3F37N8
Typical characteristics
C Capacitance (pF)
VGS = 0V
f = 1MHz
2000
1500
CISS
COSS
1000
CRSS
500
0
1
10
-VGS Gate-Source Voltage (V)
2500
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
10
9
8
7
6
5
4
3
2
1
0
ID = 7.1A
VDS = 15V
0
5
10
15
20
Q - Charge (nC)
25
30
35
Gate-Source Voltage v Gate Charge
Test circuits
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ZXMP3F37N8
Package outline SO8
SO8 Package Information
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Min.
Max.
Min.
Max.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
U
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
1.27 BSC
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMP3F37N8
Definitions
Product change
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service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex
with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
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(including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or
consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Incorporated or one of our regionally
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Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
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can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
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Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
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use of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Diodes Incorporated
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