DIODES ZXMN2A02N8TA

ZXMN2A02N8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 20V; RDS(ON) = 0.02
ID = 10.2A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A02N8TA
7”
12mm
500 units
ZXMN2A02N8TC
13”
12mm
2500 units
DEVICE MARKING
• ZXMN
2A02
Top View
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SEMICONDUCTORS
ZXMN2A02N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
ID
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
LIMIT
UNIT
20
V
12
V
10.2
8.2
8.3
A
I DM
50
A
IS
4.3
A
Pulsed Source Current (Body Diode) (c)
I SM
50
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.56
12.5
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
2.5
20
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to 150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R θJA
80
°C/W
Junction to Ambient (b)
R θJA
50
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
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SEMICONDUCTORS
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ZXMN2A02N8
CHARACTERISTICS
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SEMICONDUCTORS
ZXMN2A02N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
V (BR)DSS
20
TYP.
MAX. UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
I D =250μA, V GS =0V
V DS =20V, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
␮A
Gate-Body Leakage
I GSS
100
nA
V GS =⫾12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
Static Drain-Source On-State
R DS(on)
0.02
0.04
⍀
I =250␮A, V DS = V GS
D
V GS =4.5V, I D =11A
⍀
V GS =2.5V, I D =8.4A
V DS =10V,I D =11A
0.7
Resistance (1)
(1)(3)
g fs
27
S
Input Capacitance
C iss
1900
pF
Output Capacitance
C oss
356
pF
Reverse Transfer Capacitance
C rss
218
pF
Turn-On Delay Time
t d(on)
7.9
ns
Rise Time
tr
10
ns
V DD =10V, I D =1A
Turn-Off Delay Time
t d(off)
33.3
ns
R G ≅6.0Ω, V GS =4.5V
Fall Time
tf
13.6
ns
Total Gate Charge
Qg
18.9
nC
Gate-Source Charge
Q gs
5.2
nC
Gate-Drain Charge
Q gd
4.9
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
Forward Transconductance
DYNAMIC (3)
SWITCHING
V DS =10V, V GS =0V,
f=1MHz
(2) (3)
V DS =10V,V GS =4.5V,
I D =11A
SOURCE-DRAIN DIODE
V
T J =25°C, I S =11.5A,
16.3
ns
V GS =0V
T J =25°C, I F =2.1A,
7.8
nC
0.95
di/dt= 100A/μs
NOTES
(1) Measured under pulsed conditions. Width ⱕ300μs. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMN2A02N8
CHARACTERISTICS
ISSUE 6 - FEBRUARY 2007
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SEMICONDUCTORS
ZXMN2A02N8
CHARACTERISTICS
ISSUE 6 - FEBRUARY 2007
SEMICONDUCTORS
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ZXMN2A02N8
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's
application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use
of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
"Preview"Future device intended for production at some point. Samples may be available
"Active"Product status recommended for new designs
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect
"Not recommended for new designs"Device is still in production to support existing designs and production
"Obsolete"Production has been discontinued
Datasheet status key:
"Draft version"This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to
the test conditions and specifications may occur, at any time and without notice.
"Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and
without notice.
ISSUE 6 - FEBRUARY 2007
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SEMICONDUCTORS
ZXMN2A02N8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
⍜
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
L
H
D
E
MILLIMETRES
DIM
Pin 1
A
c
e
0.050 BSC
1.27 BSC
b
e
A1
Seating Plane
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex Semiconductors plc 2007
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Zetex Semiconductors plc
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United Kingdom
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
ISSUE 6 - FEBRUARY 2007
SEMICONDUCTORS
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