2DB1188P/Q/R 40V PNP SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Complementary NPN Type Available (2DD1766) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT89 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.052 grams (approximate) SOT89 C B E Top View Device Schematic Pin Out - Top view Ordering Information (Note 3) Product 2DB1188P-13 2DB1188Q-13 2DB1188R-13 Notes: Marking P23P P23Q P23R Reel size (inches) 13 13 13 Tape width (mm) 12 12 12 Quantity per reel 2,500 2,500 2,500 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information P23x = Product Type Marking Code Where P23P = 2DB1188P P23Q = 2DB1188Q P23R = 2DB1188R = Manufacturers’ code marking YWW = Date Code Marking Y = Last Digit of Year (ex: 1 = 2011) WW = Week Code (01 – 53) 2DB1188P/Q/R Document number: DS31144 Rev. 5 - 2 1 of 6 www.diodes.com November 2011 © Diodes Incorporated 2DB1188P/Q/R Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -40 -32 -5 -2 -3 Unit V V V A A Value 1 125 -55 to +150 Unit W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG 4. Device mounted on 15mm X 15mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions 2DB1188P/Q/R Document number: DS31144 Rev. 5 - 2 2 of 6 www.diodes.com November 2011 © Diodes Incorporated 2DB1188P/Q/R VCE(sat) 1 Max Power Dissipation (W) -IC Collector Current (A) Thermal Characteristics Limited DC 1s 100ms 100m 10ms 1ms 15x15mm 1oz Single Pulse Tamb=25°C 10m 100m 100µs 1 10 -VCE Collector-Emitter Voltage (V) 1.0 15x15mm 1oz 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve T amb=25°C Maximum Power (W) Thermal Resistance (°C/W) 100 120 15x15mm 1oz 100 80 D=0.5 60 40 D=0.2 Single Pulse 20 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k 15x15mm 1oz Single Pulse Tamb=25°C 10 1 100µ 10m 100m 10 100 1k Pulse Power Dissipation 3 Tamb=25°C 120.0 100.0 80.0 1oz copper 60.0 2oz copper 500 1000 1500 2000 Copper Area (sqmm) 2500 Maximum Power (W) 140.0 40.0 0 1 Pulse Width (s) Transient Thermal Impedance Thermal Resistance (°C/W) 1m Pulse Width (s) 2oz copper 2 1oz copper 1 Tamb=25°C 0 0 Document number: DS31144 Rev. 5 - 2 1000 1500 2000 Copper Area (sqmm) 2500 PD vs Area RTH vs Area 2DB1188P/Q/R 500 3 of 6 www.diodes.com November 2011 © Diodes Incorporated 2DB1188P/Q/R Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO -40 -32 -5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 -1 V V V μA μA IC = -50μA, IE = 0 IC = -1mA, IB = 0 IE = -50μA, IC = 0 VCB = -20V, IE = 0 VEB = - 4V, IC = 0 VCE(sat) ⎯ 82 120 180 -0.35 -0.8 180 270 390 V IC = -2A, IB = -0.2A ⎯ VCE = -3V, IC = -0.5A fT ⎯ 120 ⎯ MHz Cobo ⎯ 20 ⎯ pF 2DB1188P 2DB1188Q 2DB1188R DC Current Gain hFE ⎯ Test Condition SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance VCE = -5V, IC = -0.1A, f = 30MHz VCB = -10V, f = 1MHz 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 1.4 350 IB = -10mA IB = -8mA 1.0 0.8 IB = -6mA 0.6 IB = -4mA 0.4 TA = 150°C 250 TA = 85°C 200 150 TA = 25°C 100 TA = -55°C IB = -2mA 50 0.2 0 0 0.001 1 2 3 4 5 -VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage 0.6 IC/IB = 10 0.5 0.4 0.3 TA = 150°C 0.2 TA = 85°C 0.1 TA = 25°C TA = -55°C 0 0.0001 -VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) 0 -VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE = -3V 300 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) 1.2 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 2DB1188P/Q/R Document number: DS31144 Rev. 5 - 2 4 of 6 www.diodes.com 0.01 0.1 1 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current (2DB1188Q) 10 1.2 VCE = -3V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 0.2 TA = 85°C TA = 150°C 0 0.0001 0.001 0.01 0.1 1 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 10 November 2011 © Diodes Incorporated 60 1.2 Cobo, OUTPUT CAPACITANCE (pF) -VBE(SAT), BASE EMITTER SATURATION VOLTAGE(V) 2DB1188P/Q/R 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 150°C IC/IB = 10 50 f = 1MHz 40 30 20 10 0 0.01 0 0.0001 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Output Capacitance Characteristics 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current fT, GAIN-BANDWIDTH PRODUCT (MHz) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 IE, Emitter Current (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Emitter Current Package Outline Dimensions R0 D1 .2 00 C E H L B e B1 e1 8° (4 X ) A SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm D 2DB1188P/Q/R Document number: DS31144 Rev. 5 - 2 5 of 6 www.diodes.com November 2011 © Diodes Incorporated 2DB1188P/Q/R Suggested Pad Layout X1 Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X2 (2x) Y1 Y3 Y4 Y2 Y C X (3x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com 2DB1188P/Q/R Document number: DS31144 Rev. 5 - 2 6 of 6 www.diodes.com November 2011 © Diodes Incorporated