ONSEMI NTB75N06L

NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic Level
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Typical Applications
•
•
•
•
75 AMPERES
60 VOLTS
RDS(on) = 11 mΩ
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
N–Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient (Note 1.)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
Value
Unit
VDSS
VDGR
60
Vdc
60
Vdc
G
Vdc
VGS
VGS
20
15
ID
ID
IDM
PD
75
50
225
Adc
214
1.4
2.4
W
W/°C
W
TJ, Tstg
–55 to
+175
°C
EAS
844
mJ
4
S
4
1
2
3
Apk
1
D2PAK
CASE 418B
STYLE 2
TO–220AB
CASE 221A
STYLE 5
2
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
°C/W
RθJC
RθJA
0.7
62.5
TL
260
°C
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
NTB75N06L
LLYWW
NTP75N06L
LLYWW
1
Gate
3
Source
2
Drain
1
Gate
NTx75N06L
LL
Y
WW
2
Drain
3
Source
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
 Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 0
1
Package
Shipping
NTP75N06L
TO–220AB
50 Units/Rail
NTB75N06L
D2PAK
50 Units/Rail
NTB75N06LT4
D2PAK
800/Tape & Reel
Publication Order Number:
NTP75N06L/D
NTP75N06L, NTB75N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
–
72
74
–
–
–
–
–
–
10
100
–
–
±100
1.0
–
1.58
6.0
2.0
–
–
9.0
11
–
–
0.75
0.61
0.99
–
gFS
–
55
–
mhos
Ciss
–
3122
4370
pF
Coss
–
1029
1440
Crss
–
276
390
td(on)
–
22
32
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 2.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
µAdc
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (Note 2.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (Note 2.)
(VGS = 5.0 Vdc, ID = 37.5 Adc)
RDS(on)
Static Drain–to–Source On–Voltage (Note 2.)
(VGS = 5.0 Vdc, ID = 75 Adc)
(VGS = 5.0 Vdc, ID = 37.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 2.) (VDS = 15 Vdc, ID = 37.5 Adc)
Vdc
mV/°C
mOhm
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vd
Vdc, VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
(VDD = 30 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc, RG = 9.1 Ω) (Note 2.)
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 48 Vdc,
Vd ID = 75 Adc,
Ad
VGS = 5.0 Vdc) (Note 2.)
ns
tr
–
265
370
td(off)
–
113
160
tf
–
170
240
QT
–
66
92
Q1
–
9.0
–
Q2
–
47
–
VSD
–
–
1.0
0.9
1.15
–
Vdc
trr
–
70
–
ns
ta
–
43
–
tb
–
27
–
QRR
–
0.16
–
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 75 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 75 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/µs) (Note 2.)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
µC
NTP75N06L, NTB75N06L
160
VGS = 4.5 V
VGS = 10 V
140
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
160
VGS = 5 V
120
VGS = 6 V
VGS = 4 V
100
80
VGS = 7 V
60
VGS = 8 V
VGS = 3.5 V
40
VGS = 3 V
20
0
1
2
3
120
100
80
60
40
TJ = 25°C
TJ = 100°C
20
0
1.4
4
2.6
3
3.4
3.8
4.2
4.6
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
VGS = 5 V
0.016
TJ = 100°C
0.012
TJ = 25°C
0.008
TJ = –55°C
0.004
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
VGS, GATE–TO–SOURCE VOLTAGE (V)
0.02
5
0.02
VGS = 10 V
0.016
TJ = 100°C
0.012
TJ = 25°C
0.008
TJ = –55°C
0.004
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
2
1.8
TJ = –55°C
2.2
1.8
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
100000
ID = 37.5 A
VGS = 5 V
VGS = 0 V
TJ = 150°C
10000
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
0
VDS 10 V
140
1.4
1.2
1
TJ = 125°C
1000
TJ = 100°C
100
0.8
0.6
–50
10
–25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
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3
60
VGS, GATE–TO–SOURCE VOLTAGE (V)
NTP75N06L, NTB75N06L
12000
VDS = 0 V
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
10000
Ciss
8000
Crss
6000
Ciss
4000
Coss
2000
Crss
0
10
10
5 VGS 0 VDS 5
15
20
GATE–TO–SOURCE OR DRAIN–TO–SOURCE (V)
25
6
QT
5
3
2
1
0
ID = 75 A
TJ = 25°C
0
10
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
tr
tf
100
td(off)
td(on)
10
50
60
50
40
30
20
10
0.64 0.68 0.72 0.76
0.8
0.84 0.86 0.92 0.96
VSD, SOURCE–TO–DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
VGS = 15 V
SINGLE PULSE
TC = 25°C
10 µs
100 µs
1 ms
10
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
70
60
RG, GATE RESISTANCE (Ω)
100
1
0.1
40
VGS = 0 V
TJ = 25°C
70
0
0.6
100
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (AMPS)
1000
30
Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
80
1
20
Qg, TOTAL GATE CHARGE (nC)
VDS = 30 V
ID = 75 A
VGS = 5 V
10
Q2
4
Figure 7. Capacitance Variation
1000
VGS
Q1
dc
10
100
ID = 75 A
800
600
400
200
0
25
50
75
100
125
150
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NTP75N06L, NTB75N06L
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (µs)
Figure 13. Thermal Response
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5
0.1
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0
10
NTP75N06L, NTB75N06L
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
SEATING
PLANE
–T–
B
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
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6
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NTP75N06L, NTB75N06L
PACKAGE DIMENSIONS
D2PAK
CASE 418B–03
ISSUE D
C
E
V
–B–
4
A
1
2
3
S
–T–
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
STYLE 2:
PIN 1.
2.
3.
4.
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7
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
NTP75N06L, NTB75N06L
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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For additional information, please contact your local
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8
NTP75N06L/D