ONSEMI NTD32N06T4

NTD32N06
Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Features
•
•
•
•
•
•
•
•
Pb−Free Packages are Available
Smaller Package than MTB36N06V
Lower RDS(on)
Lower VDS(on)
Lower Total Gate Charge
Lower and Tighter VSD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
V(BR)DSS
RDS(on) TYP
ID MAX
60 V
26 m
32 A
N−Channel
D
Typical Applications
G
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
S
MARKING
DIAGRAMS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 10 M)
VDGR
60
Vdc
Gate−to−Source Voltage, Continuous
− Non−Repetitive (tp10 ms)
VGS
VGS
20
30
Vdc
ID
ID
32
22
90
93.75
0.625
2.88
1.5
−55 to
+175
Adc
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp10 s)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (Note 3)
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
IL(pk) = 25 A, VDS = 60 Vdc, RG = 25 )
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
IDM
PD
TJ, Tstg
EAS
August, 2004 − Rev. 3
4
1 2
313
2
1
3
Drain
Gate
Source
4
Drain
4
mJ
1
RJC
RJA
RJA
1.6
52
100
°C/W
TL
260
°C
1
DPAK
CASE 369C
STYLE 2
3
Apk
W
W/°C
W
W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
3. Repetitive rating; pulse width limited by maximum junction temperature.
 Semiconductor Components Industries, LLC, 2004
4
Drain
AYWW
32N06
Rating
Drain−to−Source Voltage
2
DPAK−3
CASE 369D
STYLE 2
AYWW
32N06
•
•
•
•
3
1 2 3
Gate Drain Source
32N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD32N06/D
NTD32N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
−
70
41.6
−
−
−
−
−
−
1.0
10
−
−
±100
2.0
−
2.8
7.0
4.0
−
−
21
26
−
−
−
0.417
0.680
0.633
0.62
−
−
gFS
−
21.1
−
mhos
Ciss
−
1231
1725
pF
Coss
−
346
485
Crss
−
77
160
td(on)
−
10
25
tr
−
84
180
td(off)
−
31
70
tf
−
93
200
QT
−
33
60
Q1
−
6.0
−
Q2
−
15
−
VSD
−
−
−
0.89
0.96
0.75
1.0
−
−
Vdc
trr
−
52
−
ns
ta
−
37
−
tb
−
14.3
−
QRR
−
0.095
−
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 16 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 4)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 4) (VDS = 6 Vdc, ID = 16 Adc)
Vdc
mV/°C
m
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1 ) (Note 4)
Fall Time
Gate Charge
(VDS = 48 Vdc,
Vd ID = 32 Adc,
Ad
VGS = 10 Vdc) (Note 4)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 4)
(IS = 32 Adc, VGS = 0 Vdc) (Note 4)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 32 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (Note 4)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
C
NTD32N06
60
60
VDS > = 10 V
VGS = 6 V
50
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
VGS = 6.5 V
40
VGS = 7 V
30
VGS = 8 V
VGS = 5.5 V
VGS = 5 V
20
VGS = 4.5 V
10
50
40
30
20
TJ = 25°C
10
TJ = 100°C
VGS = 4 V
TJ = −55°C
0
0
1
3
2
3
4
4.6
5
5.4
5.8
6.2
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
TJ = 100°C
0.026
TJ = 25°C
0.022
0.018
TJ = −55°C
0.014
0
10
20
30
40
50
60
7
6.6
Figure 2. Transfer Characteristics
0.03
0.024
0.023
0.022
VGS = 10 V
0.021
0.02
VGS = 15 V
0.019
0.018
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
ID = 16 A
VGS = 10 V
VGS = 0 V
IDSS, LEAKAGE (nA)
1.6
4.2
Figure 1. On−Region Characteristics
0.034
1.8
3.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 10 V
0.01
3.4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.038
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
1.4
1.2
1
TJ = 150°C
1000
TJ = 125°C
100
TJ = 100°C
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
3200
VGS = 0 V
VDS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
2800
Ciss
2400
2000
Crss
Ciss
1600
1200
800
Coss
400
Crss
0
10
5 VGS 0 VDS 5
10
15
25
20
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTD32N06
Q1
Q2
6
4
2
ID = 32 A
TJ = 25°C
0
0
4
8
12
16
20
24
28
32
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
36
32
100
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
8
VGS
Qg, TOTAL GATE CHARGE (nC)
VDS = 30 V
ID = 32 A
VGS = 10 V
tr
tf
td(off)
td(on)
1
10
100
24
20
16
12
8
4
0
0.6
0.64 0.68 0.72 0.76
0.8
0.84 0.88
0.92 0.96
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RDS(on) Limit
Thermal Limit
Package Limit
100
dc
10
10 ms
1 ms
100 s
1
Mounted on 3″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
with one die operating,10 s max
1
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
0.1
0.1
VGS = 0 V
TJ = 25°C
28
RG, GATE RESISTANCE ()
1000
ID, DRAIN CURRENT (AMPS)
QT
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
1000
10
12
350
ID = 32 A
300
250
200
150
100
50
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NTD32N06
EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
10
Normalized to RJC at Steady State
1
r(t),
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
EFFECTIVE TRANSIENT THERMAL RESPONSE
(NORMALIZED)
10
Normalized to RJA at Steady State,
1″ square Cu Pad, Cu Area 1.127 in2,
3 x 3 inch FR4 board
1
r(t),
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 14. Thermal Response
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5
10
100
1000
NTD32N06
ORDERING INFORMATION
Device
NTD32N06
Package
Shipping†
DPAK
75 Units/Rail
NTD32N06G
DPAK
(Pb−Free)
75 Units/Rail
NTD32N06−1
DPAK−3
75 Units/Rail
DPAK−3
(Pb−Free)
75 Units/Rail
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
2500 Tape & Reel
NTD32N06−1G
NTD32N06T4
NTD32N06T4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD32N06
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
C
B
V
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD32N06
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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8
For additional information, please contact your
local Sales Representative.
NTD32N06/D