DIODES ZXMP10A13FTA

ZXMP10A13F
100V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = - 100V : RDS(on)= 1
; ID = - 0.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP10A13FTA
7”
8mm
3000 units
ZXMP10A13FTC
13”
8mm
10000units
DEVICE MARKING
• 7P1
ISSUE 1 - MARCH 2005
1
SEMICONDUCTORS
ZXMP10A13F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Drain-Source Voltage
V DSS
-100
Gate-Source Voltage
V GS
±20
V
Continuous Drain Current @ VGS=10V; TA=25°C (b)
@V GS=10V; TA=70°C (b)
ID
-0.7
A
-0.5
A
-0.6
A
@ V GS=10V; TA=25°C (a)
(c)
I DM
-3.1
A
Continuous Source Current (Body Diode) (b)
IS
-1.1
A
Pulsed Source Current (Body Diode) (c)
I SM
-3.1
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
625
mW
5
mW/°C
(b)
PD
Pulsed Drain Current
Power Dissipation at T A =25°C
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
806
mW
6.4
mW/°C
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ⍜JA
200
°C/W
Junction to Ambient (b)
R ⍜JA
155
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
ISSUE 1 - MARCH 2005
SEMICONDUCTORS
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ZXMP10A13F
CHARACTERISTICS
ISSUE 1 - MARCH 2005
3
SEMICONDUCTORS
ZXMP10A13F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
-100
TYP.
MAX. UNIT CONDITIONS
STATIC
V
I D = -250␮A, V GS =0V
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
-1.0
␮A
V DS = -100V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
I D = -250␮A, V DS =V GS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
R DS(on)
-2.0
g fs
V
1
⍀
1.45
⍀
V GS = -10V, I D = -0.6A
V GS = -6V, I D = -0.5A
1.2
S
V DS = -15V, I D = -0.6A
(1)
Resistance
Forward Transconductance (1)(3)
-4.0
DYNAMIC (3)
Input Capacitance
C iss
141
pF
Output Capacitance
C oss
13.1
pF
C rss
10.8
pF
Reverse Transfer Capacitance
V DS = -50V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
1.6
ns
Rise Time
tr
2.1
ns
Turn-Off Delay Time
t d(off)
5.9
ns
Fall Time
tf
3.3
ns
Gate Charge
Qg
1.8
nC
Total Gate Charge
Qg
3.5
nC
Gate-Source Charge
Q gs
0.6
nC
Gate-Drain Charge
Q gd
1.6
nC
V SD
-0.85
V DD = -50V, I D = -1A
R G ≅ 6.0⍀, V GS = -10V
V DS = -50V, V GS = -5V
I D = -0.6A
V DS = -50V, V GS = -10V
I D = -0.6A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T j =25°C, I S = -0.75A,
V GS =0V
T j =25°C, I S = -0.9A,
di/dt=100A/␮s
t rr
29
ns
Q rr
31
nC
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMP10A13F
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2005
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SEMICONDUCTORS
ZXMP10A13F
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ZXMP10A13F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
H
0.33
0.51
0.013
0.020
K
0.01
0.10
0.0004
0.004
C
ᎏ
1.10
ᎏ
0.043
L
2.10
2.50
0.083
0.0985
D
0.37
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
F
0.085
0.15
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
⍜
10⬚ TYP
10⬚ TYP
G
1.90 NOM
0.075 NOM
© Zetex Semiconductors plc 2005
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - MARCH 2005
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SEMICONDUCTORS