NTK3139P Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com P−channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC−89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive These are Pb−Free Devices V(BR)DSS −20 V Applications • Load/Power Switching • Interfacing, Logic Switching • Battery Management for Ultra Small Portable Electronics RDS(on) TYP ID Max 0.38 W @ −4.5 V −780 mA 0.52 W @ −2.5 V −660 mA 0.70 W @ −1.8 V −100 mA 0.95 W @ −1.5 V −100 mA SOT−723 (3−LEAD) 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6 V ID −780 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −570 tv5s TA = 25°C −870 Steady State TA = 25°C PD tv5s Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) Pulsed Drain Current 1 2 Top View 1 − Gate 2 − Source 3 − Drain mW 450 550 TA = 25°C ID TA = 85°C TA = 25°C tp = 10 ms mA −660 MARKING DIAGRAM −480 PD 310 KD M mW IDM −1.2 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size SOT−723 CASE 631AA STYLE 5 1 KD = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping † NTK3139PT1G SOT−723* 4000 / Tape & Reel NTK3139PT5G SOT−723* 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb−Free. © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. 0 1 Publication Order Number: NTK3139P/D NTK3139P THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 280 °C/W Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Gate−to−Source Leakage Current VGS = 0 V, VDS = −16V V −16.5 mV/°C TJ = 25°C −1.0 TJ = 125°C −2.0 IGSS VDS = 0 V, VGS = ±4.5 V VGS(TH) VGS = VDS, ID = −250 mA mA ±2.0 mA −1.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient 2.4 VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance −0.45 gFS mV/°C VGS = −4.5 V, ID = −780 mA 0.38 0.48 VGS = −2.5 V, ID = −660 mA 0.52 0.67 VGS = −1.8 V, ID = −100 mA 0.70 0.95 VGS = −1.5 V, ID = −100 mA 0.95 2.20 VDS = −10 V, ID = −540 mA 1.2 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = −16 V 113 170 15 25 9.0 15 pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 W tf 5.8 ns 32.7 20.3 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −350 mA TJ = 25°C −0.8 13.2 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A, VDD = −20 V QRR http://onsemi.com 2 V ns 11.8 1.4 5.0 5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures −1.2 nC NTK3139P TYPICAL CHARACTERISTICS 2.0 1.8 VDS ≥ −5 V 1.5 TJ = 25°C −2.0 V 1.0 −1.8 V −1.6 V −1.5 V 0.5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.9 TJ = 25°C 0.6 TJ = 125°C 0.3 6 0.75 1.25 1.75 2.25 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 3.0 ID = −0.78 A TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0 1 1.2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.5 TJ = −55°C −1.4 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) −2.2 V 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.8 TJ = 25°C 0.7 VGS = −2.5 V 0.6 0.5 VGS = −4.5 V 0.4 0.3 0.2 0.4 0.7 0.9 1.2 1.4 1.7 1.9 −VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.2 VGS = 0 V VGS = −1.5 V, ID = −100 mA 1.0 −IDSS, LEAKAGE (nA) −ID, DRAIN CURRENT (A) VGS = −4.5 V to −2.5 V VGS = −1.8 V, ID = −100 mA 1000 0.8 VGS = −2.5 V, ID = −550 mA 0.6 TJ = 150°C TJ = 125°C 100 0.4 VGS = −4.5 V, ID = −630 mA 0.2 −60 −35 10 −10 15 40 65 90 115 140 5.0 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTK3139P TYPICAL CHARACTERISTICS 150 100 120 t, TIME (ns) td(off) 90 60 30 tf 10 td(on) tr Coss Crss 0 0 2 1 4 6 8 10 12 14 16 18 20 1 10 100 −DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 2.0 −IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) VDD = −10 V ID = −200 mA VGS = −4.5 V VGS = 0 V TJ = 25°C Ciss 150°C VGS = 0 V 125°C 1.5 25°C 1.0 TJ = −55°C 0.5 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 1.2 NTK3139P PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTK3139P/D