NTMS3P03R2 Power MOSFET −3.05 Amps, −30 Volts P−Channel SOIC−8 http://onsemi.com Features • • • • • • • • High Efficiency Components in a Single SOIC−8 Package High Density Power MOSFET with Low RDS(on) Miniature SOIC−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for the SOIC−8 Package is Provided Pb−Free Package is Available −3.05 AMPERES −30 VOLTS 0.085 W @ VGS = −10 V P−Channel D G Applications • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery−Powered Products, S i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MARKING DIAGRAM & PIN ASSIGNMENT 8 1 8 D D E3P03 AYWW G G SOIC−8 CASE 751 STYLE 13 1 NC S E3P03 A Y WW G D D S G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMS3P03R2 NTMS3P03R2G Package Shipping† SOIC−8 2500/Tape & Reel SOIC−8 (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTMS3P03R2/D NTMS3P03R2 MAXIMUM RATINGS Rating Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage − Continuous VGS ±20 V Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 171 0.73 −2.34 −1.87 −8.0 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 100 1.25 −3.05 −2.44 −12 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 62.5 2.0 −3.86 −3.1 −15 °C/W W A A A TJ, Tstg −55 to +150 °C EAS 140 mJ TL 260 °C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, t = steady state. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com 2 NTMS3P03R2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Characteristic Symbol Min Typ Max Unit −30 − − −30 − − − − − − −1.0 −10 − − −100 − − 100 −1.0 − −1.7 3.6 −2.5 − − − 0.063 0.090 0.085 0.115 gFS − 5.0 − Mhos Ciss − 520 750 pF Coss − 170 325 Crss − 70 135 td(on) − 12 22 tr − 16 30 td(off) − 45 80 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = −20 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = −10 Vdc, ID = −3.05 Adc) (VGS = −4.5 Vdc, ID = −1.5 Adc) RDS(on) Forward Transconductance (VDS = −15 Vdc, ID = −3.05 Adc) Vdc W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 6 & 7) Turn−On Delay Time (VDD = −24 Vdc, ID = −3.05 Adc, VGS = −10 Vdc, RG = 6.0 W) Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time (VDD = −24 Vdc, ID = −1.5 Adc, VGS = −4.5 Vdc, RG = 6.0 W) Rise Time Turn−Off Delay Time Fall Time Total Gate Charge (VDS = −24 Vdc, VGS = −10 Vdc, ID = −3.05 Adc) Gate−Source Charge Gate−Drain Charge tf − 45 80 td(on) − 16 − tr − 42 − td(off) − 32 − tf − 35 − Qtot − 16 25 ns ns nC Qgs − 2.0 − Qgd − 4.5 − VSD − − −0.96 −0.78 −1.25 − Vdc trr − 34 − ns ta − 18 − tb − 16 − QRR − 0.03 − BODY−DRAIN DIODE RATINGS (Note 6) Diode Forward On−Voltage (IS = −3.05 Adc, VGS = 0 V) (IS = −3.05 Adc, VGS = 0 V, TJ = 125°C) Reverse Recovery Time (IS = −3.05 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 5. Handling precautions to protect against electrostatic discharge is mandatory. 6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 7. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 mC NTMS3P03R2 TYPICAL ELECTRICAL CHARACTERISTICS −ID, DRAIN CURRENT (AMPS) VGS = −4 V VGS = −4.6 V VGS = −6 V 4 VGS = −4.8 V TJ = 25°C VGS = −3.6 V VGS = −2.8 V VGS = −3.2 V VGS = −5 V 3 2 VGS = −2.6 V 1 0 0.25 0.5 0.75 1 1.25 VGS = −3 V 1.5 1.75 TJ = −55°C 1 1 2 3 4 5 Figure 2. Transfer Characteristics ID = −3.05 A TJ = 25°C 0.4 0.3 0.2 0.1 5 4 6 7 8 0.7 ID = −1.5 A TJ = 25°C 0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 3 5 6 7 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Gate−to−Source Voltage 0.25 TJ = 25°C 0.2 VGS = −4.5 V 0.15 VGS = −10 V 0.1 1 TJ = 25°C 2 Figure 1. On−Region Characteristics 0.5 0.05 TJ = 100°C 3 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.6 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.7 0 VDS > = −10 V 5 0 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = −4.4 V VGS = −8 V 5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 6 VGS = −10 V 2 3 4 5 6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) −ID, DRAIN CURRENT (AMPS) 6 1.6 1.4 ID = −3.05 A VGS = −10 V 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 −ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Drain Current and Gate Voltage Figure 6. On Resistance Variation with Temperature http://onsemi.com 4 150 NTMS3P03R2 VGS = 0 V VDS = 0 V 1200 C, CAPACITANCE (pF) IDSS, LEAKAGE (nA) 10000 TJ = 150°C 1000 TJ = 125°C 100 VGS = 0 V Ciss 1000 800 Ciss Crss 600 400 Coss 200 10 6 14 10 22 18 26 0 10 30 5 QT 15 6 10 Q2 0 0 2 4 6 8 10 12 0 16 14 25 30 100 td(off) tf tr 10 td(on) 1 1 100 10 RG, GATE RESISTANCE (W) Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 10. Resistive Switching Time Variation vs. Gate Resistance 3 VDS = −24 V ID = −1.5 A VGS = −4.5 V tr tf 1 20 Qg, TOTAL GATE CHARGE (nC) 100 10 15 5 ID = −3.05 A TJ = 25°C 1000 t, TIME (ns) 20 VGS t, TIME (ns) VDS 2 10 VDS = −24 V ID = −3.05 A VGS = −10 V 25 10 IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 30 1000 Q1 −VDS Figure 8. Capacitance Variation 12 4 5 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Drain−to−Source Leakage Current vs. Voltage 8 0 −VGS −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 Crss TJ = 25°C td(off) td(on) 100 VGS = 0 V TJ = 25°C 2.5 2 1.5 1 0.5 0 0.2 0.4 0.6 0.8 1 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current http://onsemi.com 5 1.2 NTMS3P03R2 VGS = 12 V SINGLE PULSE TA = 25°C 10 1.0 ms di/dt 10 ms IS dc 1.0 trr ta 0.1 0.01 0.1 0.25 IS tp 10 1.0 tb TIME RDS(on) THERMAL LIMIT PACKAGE LIMIT IS 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 13. Maximum Rated Forward Biased Safe Operating Area Figure 14. Diode Reverse Recovery Waveform 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE −ID, DRAIN CURRENT (AMPS) 100 D = 0.5 0.2 0.1 0.1 Normalized to RqJA at Steady State (1″ pad) Chip Junction 2.32 W 18.5 W 50.9 W 37.1 W 56.8 W 0.05 0.02 0.01 1E−03 0.0014 F 0.01 0.0073 F 0.022 F 0.105 F 0.484 F 3.68 F Ambient Single Pulse 1E−02 24.4 W 1E−01 1E+00 1E+01 t, TIME (s) Figure 15. FET Thermal Response http://onsemi.com 6 1E+02 1E+03 NTMS3P03R2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AG −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 1 0.25 (0.010) Y M M 4 −Y− K G C N MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 G 1.27 BSC H 0.10 0.25 J 0.19 0.25 K 0.40 1.27 M 0_ 8_ N 0.25 0.50 S 5.80 6.20 STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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