KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSE13006 : KSE13007 Value 600 700 Units V V VCEO Collector-Emitter Voltage : KSE13006 : KSE13007 300 400 V V VEBO Emitter- Base Voltage 9 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 4 A 80 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 Test Condition IC = 10mA, IB = 0 Min. Typ. Max. 300 400 Units V V IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE *DC Current Gain VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1 2 3 V V V VBE (sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 1.6 V V Cob Output Capacitance VCB = 10V, f = 0.1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω tON Turn On Time tSTG Storage Time tF Fall Time 1 8 5 mA 60 30 110 pF 4 MHz 1.6 µs 3 µs 0.7 µs * Pulse test: PW≤300µs, Duty cycle≤2% ©2000 Fairchild Semiconductor International Rev. A1, December 2000 KSE13006/13007 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 10 IC = 3 IB 1 VBE(sat) V CE(sat) 0.1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 1000 tR, tD [µ s], TURN ON TIME Cob[pF], OUTPUT CAPACITANCE 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 tR 100 tD, V BE(off)=5V VCC =125V IC=5IB 1 0.1 1 10 100 10 0.1 1000 VCB[V], COLLECTOR-BASE VOLTAGE 1 10 IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 100 10000 VCC=125V IC =5IB tF DC s 100 10 s 0µ 1000 10 IC[A], COLLECTOR CURRENT tSTG 1m tSTG, tF [µs], TURN OFF TIME 10 IC[A], COLLECTOR CURRENT 1 0.1 KSE13006 KSE13007 0.01 10 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time ©2000 Fairchild Semiconductor International 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A1, December 2000 KSE13006/13007 Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A1, December 2000 KSE13006/13007 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A1, December 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E