FAIRCHILD MJD42_MJD42C

MJD42C
MJD42C
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I.PACK, “- I” Suffix)
• Electrically Similar to Popular TIP42C
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Value
-100
Collector-Base Voltage
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-100
V
-5
V
IC
Collector Current (DC)
ICP
Collector Current (Pulse)
IB
Base Current
-2
A
PC
Collector Dissipation (TC=25°C)
20
W
-6
A
-10
A
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
Test Condition
IC = - 30mA, IB = 0
ICEO
Collector Cut-off Current
VCE = -60V, IB = 0
-50
µA
ICES
Collector Cut-off Current
VCE = -100V, VBE = 0
-10
µA
-0.5
mA
IEBO
Emitter Cut-off Current
VBE = -5V, IC = 0
hFE
* DC Current Gain
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = -6A, IB = -600mA
VBE(on)
* Base-Emitter ON Voltage
VCE = -6A, IC = -4A
fT
Current Gain Bandwidth Product
VCE = -10V, IC = -500mA
Min.
-100
30
15
3
Max.
Units
V
75
-1.5
V
-2
V
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJD42C
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = -2V
100
10
1
-0.01
-0.1
-1
-10
-10
IC = 10 IB
-1
V BE(sat)
-0.1
VCE(sat)
-0.01
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
tR, tD [µs], TURN ON TIME
Cob[pF], CAPACITANCE
1000
100
10
V CC = -30V
IC = 10.IB
1
tR
0.1
tD VBE(off)=-5V
0.01
-0.01
1
-0.1
-1
-10
-0.1
-10
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Capacitance
Figure 4. Turn On Time
10
-100
V CC = -30V
IC = 10.IB
tSTG
1
tF
0.1
0.01
-0.01
IC[A], COLLECTOR CURRENT
tSTG,tF [µ s], TURN OFF TIME
-1
-100
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2001 Fairchild Semiconductor Corporation
-10
ICP(max)
-10
10
1m
IC(max)
5m
-1
50
s
0µ
0µ
s
s
s
DC
-0.1
-0.01
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A1, February 2001
MJD42C
Typical Characteristics (Continued)
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJD42C
Package Demensions
D-PAK
2.30 ±0.10
MIN0.55
0.91 ±0.10
9.50 ±0.30
0.50 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(1.00)
(3.05)
(2XR0.25)
(0.10)
2.70 ±0.20
6.10 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.90)
2.30 ±0.20
(0.70)
2.30TYP
[2.30±0.20]
(0.50)
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
6.10 ±0.20
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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LILENT SWITCHER®
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VCX™
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INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. G