NE W Central CMPTA29 TM Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain. Marking Code is C29. SOT-23 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD 100 100 12 500 350 TJ,Tstg ΘJA -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS: (TA=25oC) SYMBOL ICES ICBO IEBO BVCES BVCBO BVEBO VCE(SAT) VCE(SAT) VBE(ON) TEST CONDITIONS VCE=80V VCB=80V VBE=10V IC=100µA IC=100µA IE=10µA IC=10mA, IB=10µA IC=100mA, IB=100mA VCE=5.0V, IC=100mA MIN MAX 500 100 100 100 100 12 1.2 1.5 2.0 202 UNITS nA nA nA V V V V V V SYMBOL hFE hFE fT Cob TEST CONDITIONS VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN 10,000 10,000 125 MAX UNITS 8.0 MHz pF All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 R1 203