Central CZT2000 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD 200 200 10 600 2.0 TJ,Tstg ΘJA -65 to +150 62.5 UNITS V V V mA W oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO BVCES VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hFE TEST CONDITIONS VCB=180V VBE=10V IC=1.0mA IC=20mA, IB=25µA IC=80mA, IB=40µA IC=160mA, IB=100µA VCE=5.0V, IC=160mA VCE=5.0V, IC=100µA VCE=5.0V, IC=10mA VCE=5.0V, IC=160mA MIN MAX 500 100 200 0.9 1.1 1.2 2.0 3,000 3,000 3,000 298 UNITS nA nA V V V V V All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 299