FAIRCHILD FDA032N08

FDA032N08
tm
®
N-Channel PowerTrench MOSFET
75V, 235A, 3.2mΩ
Features
Description
• RDS(on) = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A
This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe-
• Fast Switching Speed
cially tailored to minimize the on-state resistance and yet
• Low Gate Charge
maintain superior switching performance.
• High Performance Trench Technology for Extremely Low
RDS(on)
Application
• High Power and Current Handling Capability
• DC to DC Convertors / Synchronous Rectification
• RoHS Compliant
D
G
TO-3PN
G DS
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Parameter
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Units
V
±20
V
-Continuous (TC = 25oC, Silicon Limited)
235*
-Continuous (TC = 100oC, Silicon Limited)
165*
-Continuous (TC = 25oC, Package Limited)
120
- Pulsed
A
(Note 1)
940
A
(Note 2)
1995
mJ
5.5
V/ns
(Note 3)
(TC = 25oC)
375
W
- Derate above 25oC
2.5
W/oC
-55 to +175
oC
300
oC
Ratings
Units
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
FDA032N08
75
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
0.4
RθCS
Thermal Resistance, Case to Sink Typ.
0.24
RθJA
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. A
oC/W
40
1
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FDA032N08 N-Channel PowerTrench® MOSFET
January 2009
Device Marking
FDA032N08
Device
FDA032N08
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
75
-
-
V
-
0.05
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 75V, VGS = 0V
-
-
1
VDS = 75V, TC = 150oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.5
3.5
4.5
V
-
2.5
3.2
mΩ
-
180
-
S
ID = 250μA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
gFS
Forward Transconductance
VDS = 20V, ID = 75A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 60V, ID = 75A
VGS = 10V
(Note 4, 5)
-
11400
15160
pF
-
1360
1810
pF
-
595
800
pF
-
169
220
nC
-
60
-
nC
-
47
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 37.5V, ID = 75A
RGEN = 25Ω, VGS = 10V
(Note 4, 5)
-
230
470
ns
-
191
392
ns
-
335
680
ns
-
121
252
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
235
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
940
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.3
V
trr
Reverse Recovery Time
-
53
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/μs
-
77
-
nC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA032N08 Rev. A
2
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FDA032N08 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3000
500
100
100
ID,Drain Current[A]
ID,Drain Current[A]
1000
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
o
175 C
o
25 C
10
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
0.1
0.01
1
0.1
VDS,Drain-Source Voltage[V]
1
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
VGS = 10V
0.0025
VGS = 20V
100
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
0.0020
0
100
200
300
ID, Drain Current [A]
1
0.0
400
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
10000
1000
100
0.1
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1
10
VDS, Drain-Source Voltage [V]
1.5
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
2. 250μs Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
100000
Capacitances [pF]
8
400
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
4
6
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.0030
FDA032N08 Rev. A
o
-55 C
VDS = 15V
VDS = 37.5V
VDS = 60V
8
6
4
2
*Note: ID = 75A
0
80
0
3
50
100
150
Qg, Total Gate Charge [nC]
200
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FDA032N08 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation vs.
Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 10mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 75A
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
3000
250
1000
10μs
200
100μs
100
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
10
ID, Drain Current [A]
ID, Drain Current [A]
2.5
1
*Notes:
o
1. TC = 25 C
0.1
150
100
50
Limited by package
o
2. TJ = 175 C
3. Single Pulse
0.01
1
10
VDS, Drain-Source Voltage [V]
0
25
100
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
0.5
0.5
0.1
0.2
PDM
0.1
t2
*Notes:
0.02
0.01
o
1. ZθJC(t) = 0.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.005
-5
10
FDA032N08 Rev. A
t1
0.05
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
0
10
1
10
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FDA032N08 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDA032N08 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA032N08 Rev. A
5
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FDA032N08 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDA032N08 Rev. A
6
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FDA032N08 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA032N08 Rev. A
7
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
FDA032N08 Rev. A
8
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FDA032N08 N-Channel PowerTrench® MOSFET
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