Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2.0 A, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Efficiency ≥ 21% ACPR ≤ - 58 dBc • Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2.0 A Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Efficiency ≥ 27.5% IMD ≤ - 31.3 dBc • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT OFDM Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Input and Output Matched for Ease of Use • Integrated ESD Protection • Excellent Thermal Stability • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. 470 - 860 MHz, 240 W, 32 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 375G - 04, STYLE 1 NI - 860C3 Table 1. Maximum Ratings (1) Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Drain Current - Continuous ID 17 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 648 3.7 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 105 W CW Case Temperature 77°C, 45 W CW RθJC 0.27 0.29 °C/W 1. Each side of device measured separately. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRF377HR3 MRF377HR5 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model 7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µA) VGS(th) — 2.8 — Vdc Gate Quiescent Voltage (VDS = 32 Vdc, ID = 225 mA) VGS(Q) — 3.5 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 A) VDS(on) — 0.27 — Vdc Crss — 3.2 — pF Off Characteristics (1) On Characteristics (1) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Characteristics (In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system)(2) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) Gps 16.5 18.2 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) η 21 22.9 — % Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) ACPR — - 59.2 - 57 dBc Typical Characteristics (In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system)(2) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Gps dB — — — — — 17.6 17.6 17.4 17.4 16.8 — — — — — 1. Each side of device measured separately. 2. Measured in push - pull configuration. (continued) MRF377HR3 MRF377HR5 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz η Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz ACPR Min Typ Max Unit % — — — — — 23.5 25.8 23.0 22.7 21.3 — — — — — dBc — — — — — - 59.3 - 59.3 - 58.7 - 58.7 - 58.1 — — — — — Typical Characteristics (In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system)(1) Common Source Power Gain (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Gps Drain Efficiency (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz η Intermodulation Distortion (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz IMD dB — — — — — 17.5 17.5 17.2 17.2 16.6 — — — — — % — — — — — 31.0 34.3 30.1 29.6 27.8 — — — — — dBc — — — — — 31.7 32.7 32.9 34.2 35.4 — — — — — 1. Measured in push - pull configuration. MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 3 Table 5. 845 - 875 MHz Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Surface Mount, 11 Ω (0805) 2508051107Y0 Fair - Rite Balun 1, Balun 2 0.8 - 1GHz Xinger Balun 3A412 Anaran C1 33 pF Chip Capacitor (0805) 08055J330JBT AVX / Kyocera C2 2.7 pF Chip Capacitor (0603) 06035J2R7BBT AVX / Kyocera C3 12 pF Chip Capacitor (0805) 08051J120GBT AVX / Kyocera C4, C5 6.8 pF Chip Capacitors (0805) 08051J6R8BBT AVX / Kyocera C6 2.7 pF Chip Capacitor (0805) 0805J2R7BBT AVX / Kyocera C7, C8, C9, C10 3.3 pF Chip Capacitors (0805) 08051J3R3BBT AVX / Kyocera C11, C12 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC3810 Kemet C13, C14, C15, C16 0.01 µF, 100 V Chip Capacitors C1825C103J1GAC Kemet C17, C18 0.56 µF, 50 V Chip Capacitors C1825C564J5RAC Kemet C19, C20 10 µF, 50 V Tantalum Chip Capacitors 522Z050/100MTRE Tecate C21, C22, C23, C24 47 µF, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX / Kyocera C25, C26 470 µF, 63 V Electrolytic Capacitors NACZF471M63V (18x22) Nippon L1 12 nH Inductor (0603) 0603HC- 12NXJB CoilCraft L2 7.15 nH Inductor 1606 - 7 CoilCraft L3, L4 10 nH Inductor (0603) 0603HC- 10NXJB CoilCraft R1, R2 24 Ω, 1/8 W, 5% Chip Resistors (1206) WB1, WB2, WB3, WB4 Brass Wear Shims PCB Arlon 30 mil, εr = 2.56 DS1152 DS Electronics MRF377 Drain MRF377 Gate C19 C11 VGG VDD C22 C9 C26 C21 L3 WB1 C2 L1 C18 C15 B1 R1 Balun 2 WB3 C14 Balun 1 C3 C4 L2 C5 C7 C6 R2 C13 C24 VGG C23 WB4 WB2 C1 B2 C8 C16 C17 L4 C25 C10 VDD C12 C20 DS1152−A Rev 0 DS1152−B Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout MRF377HR3 MRF377HR5 4 RF Device Data Freescale Semiconductor TYPICAL NARROWBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 19 18.5 18 17.5 17 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 16.5 16 10 −30 IDQ = 1400 mA −40 1600 mA −50 1800 mA 2200 mA −60 VDD = 32 Vdc f1 = 859.95 MHz, f2 = 860.05 MHz −70 100 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 2. Two - Tone Power Gain versus Output Power Figure 3. Third Order Intermodulation Distortion versus Output Power 45 −20 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 40 −30 −40 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 2000 mA 3rd Order −50 5th Order −60 7th Order VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz −70 −80 10 35 η 30 25 20 15 10 5 10 100 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Intermodulation Distortion Products versus Output Power Figure 5. Two - Tone Drain Efficiency versus Output Power 19 60 Gps G ps , POWER GAIN (dB) 18 40 17 20 η 16 0 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 15 14 −20 −40 IMD 13 −60 12 −80 10 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) Gps −20 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain, Efficiency and IMD versus Output Power MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 5 f = 845 MHz Zload f = 875 MHz Zsource f = 875 MHz f = 845 MHz Zo = 10 Ω VDD = 32 V, IDQ = 2 x 1000 mA, Pout = 45 W Avg., DVBT OFDM f MHz Zsource Ω Zload Ω 845 4.66 - j5.90 8.59 - j4.22 860 4.38 - j5.64 9.36 - j4.95 875 3.93 - j5.33 9.39 - j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 7. 845 - 875 MHz Narrowband Series Equivalent Source and Load Impedance MRF377HR3 MRF377HR5 6 RF Device Data Freescale Semiconductor Table 6. 470—860 MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Surface Mount, 30 Ω (0603) 2506033007Y0 Fair - Rite Balun 1, Balun 2 Rogers 3.006, εr = 6.06, 1 oz Cu DS1046 DS Electronics C1 12 pF Chip Capacitor (0603) 06035J120GBT AVX / Kyocera C2, C5 12 pF Chip Capacitors (0805) 08051J120GBT AVX / Kyocera C3 3.9 pF Chip Capacitor (0805) 08051J3R9BBT AVX / Kyocera C4, C7, C12, C15, C17 8.2 pF Chip Capacitors (0805) 08051J8R2BBT AVX / Kyocera C6 3.3 pF Chip Capacitor (0805) 08051J3R3BBT AVX / Kyocera C8 0.4 - 2.5 pF Variable Capacitor 27283PC Gigatronics C9, C10 3.3 pF Chip Capacitors (0603) 06035J3R3BBT AVX / Kyocera C11, C14 10 pF Chip Capacitor (0805) 08051J100GBT AVX / Kyocera C13 4.7 pF Chip Capacitor (0805) 08051J4R7BBT AVX / Kyocera C16 2.2 pF Chip Capacitor (0603) 06035J2R2BBT AVX / Kyocera C18 2.2 pF Chip Capacitor (0805) 08051J2R2BBT AVX / Kyocera C19, C20, C21, C22 47 µF, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX C23, C26 2.2 µF, 50 V Ceramic Chip Capacitors C1825C225J5RAC3810 Kemet C24, C25, C27, C29 0.01 µF, 100 V Ceramic Chip Capacitors C1825C103J1GAC Kemet C28, C30 0.56 µF, 50 V Ceramic Chip Capacitors C1825C564J5GAC Kemet C31, C32 10 µF, 50 V Chip Capacitors 522Z - 050/100MTRE Tecate C33, C34 470 µF, 63 V Electrolytic Capacitors SME63VB471M12X25LL United Chemi - Con L1, L2 15 nH Inductors (0603) L0603150GGW003 AVX L3, L4 12 nH Inductors (0603) 0603HC- 12NHJBU CoilCraft L5, L6 8 nH Coil Inductors A03T - 5 CoilCraft L7 22 nH Coil Inductor B07T - 5 CoilCraft L8 18.5 nH Coil Inductor A05T - 5 CoilCraft R1, R2 12.1 Ω, 1/16 W, 1% Chip Resistors (0603) PCB Gate, PCB Drain PCB Motherboard w/Integrated Daughterboard, Rogers 3003, εr = 3.03, 0.5 oz Cu DS1047 DS Electronics MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 7 C34 C20 VGG VDD C19 C32 L3 R1 C9 L1 C23 C24 L5 C27 C28 B1 C8 C6 C17 C3 L8 C11 C13 C14 C16 L7 C1 C5 C4 C12 C2 C18 C15 C7 B2 C26 C25 L2 L6 C29 C30 L4 R2 C10 C31 Balun 1 Balun 2 C22 VGG VDD C21 DS1047 Rev 4 DS1047 Rev 4 C33 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Multilayer Balun Mounting Detail Topside View Upside Down View Figure 8. 470 - 860 MHz Broadband Test Circuit Component Layout MRF377HR3 MRF377HR5 8 RF Device Data Freescale Semiconductor 19 40 18 G ps , POWER GAIN (dB) 17 35 Gps 30 16 15 14 13 12 25 η 20 VDD = 32 Vdc, Pout = 45 W (Avg.), IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols −40 −45 −50 11 −55 10 −60 ACPR 9 420 480 540 600 660 720 780 −65 900 840 ACPR, ADJACENT CHANNEL POWER RATIO η, DRAIN EFFICIENCY (%) TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS f, FREQUENCY (MHz) Figure 9. Single - Channel DVBT OFDM Broadband Performance 19 30 VDD = 32 Vdc, IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 470 MHz 18 25 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dBc) 18.5 560 MHz 660 MHz 17.5 760 MHz 860 MHz 17 VDD = 32 Vdc IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 20 660 MHz 860 MHz 15 760 MHz 10 5 16.5 16 0 2 4 6 8 10 30 50 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Channel DVBT OFDM Broadband Performance Power Gain versus Output Power Figure 11. Single - Channel DVBT OFDM Broadband Performance Drain Efficiency versus Output Power −56 −20 470 MHz −60 −40 660 MHz −50 760 MHz 860 MHz −60 −62 −64 −66 7.61 MHz −30 −58 (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 470 MHz 560 MHz VDD = 32 Vdc IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols −70 −80 560 MHz −90 4 kHz BW −100 4 kHz BW −110 −68 10 100 −5 −4 −3 −2 −1 0 1 2 3 4 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 12. Single - Channel DVBT OFDM Broadband Performance Adjacent Channel Power Ratio versus Output Power Figure 13. 8K Mode DVBT OFDM Spectrum 5 MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 9 TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS 17 45 40 Gps G ps , POWER GAIN (dB) 16 35 15 30 η 14 25 VDD = 32 Vdc Pout = 80 W (Avg.) IDQ = 2000 mA ATSC 8VSB 13 12 11 −15 −20 −25 10 −30 9 ACPR 8 420 480 −35 540 600 660 720 780 840 −45 900 ACPR, ADJACENT CHANNEL POWER RATIO η, DRAIN EFFICIENCY (%) 18 f, FREQUENCY (MHz) Figure 14. Single - Channel ATSC 8VSB Broadband Performance 19 40 VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 470 MHz 18 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dBc) 18.5 560 MHz 660 MHz 17.5 860 MHz VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 35 760 MHz 17 16.5 470 MHz 560 MHz 30 660 MHz 25 760 MHz 20 860 MHz 15 10 5 16 0 10 100 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 16. Single - Channel ATSC 8VSB Broadband Performance Drain Efficiency versus Output Power −25 −10 Reference Point −20 −30 −30 860 MHz −40 −35 −50 470 MHz −40 (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Pout, OUTPUT POWER (WATTS) AVG. Figure 15. Single - Channel ATSC 8VSB Broadband Performance Power Gain versus Output Power 660 MHz 760 MHz IMRU −60 −70 560 MHz −80 VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB −45 IMRL −90 3.25 MHz Offset −100 −50 10 3.25 MHz Offset 100 −4.0 −3.2 −2.4 −1.6 −0.8 0 0.8 1.6 2.4 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 17. Single - Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power Figure 18. ATSC 8VSB Spectrum 3.2 4.0 MRF377HR3 MRF377HR5 10 RF Device Data Freescale Semiconductor f = 470 MHz f = 470 MHz Zload Zsource f = 860 MHz Zo = 10 Ω Zo = 10 Ω f = 860 MHz Optimized for VDD = 32 V, IDQ = 2 x 1000 mA, Pout = 45 W Avg., DVBT OFDM f MHz Zsource Ω Zload Ω 470 5.79 - j2.40 6.21 - j1.69 560 6.63 - j2.63 5.66 - j1.12 660 6.57 - j4.03 6.76 - j1.00 760 6.67 - j4.55 6.57 - j1.91 860 5.34 - j6.28 7.37 - j5.45 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 11 NOTES MRF377HR3 MRF377HR5 12 RF Device Data Freescale Semiconductor NOTES MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 13 NOTES MRF377HR3 MRF377HR5 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 4 G ccc R T A M B M Q bbb 2X L M J T A M M B M (LID) 2 1 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. (FLANGE) 5 4X S (INSULATOR) bbb M T A K 3 4X M B M 4 B D bbb M ccc T A M M B T A M M B M F N (LID) E M H bbb A C (INSULATOR) M T A M B M A T SEATING PLANE DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE CASE 375G - 04 ISSUE E NI - 860C3 MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF377HR3 MRF377HR5 Document Number: MRF377H Rev. 0, 1/2005 16 RF Device Data Freescale Semiconductor