FREESCALE MRF6S9045MR1

Freescale Semiconductor
Technical Data
Document Number: MRF6S9045
Rev. 1, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,
Pout = 16 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF6S9045NR1
MRF6S9045NBR1
MRF6S9045MR1
MRF6S9045MBR1
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9045NR1(MR1)
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9045NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
175
1.0
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
Unit
°C/W
1.0
1.1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µA)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q)
2
2.9
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.22
0.3
Vdc
gfs
—
4
—
S
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
77
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.78
—
pF
Characteristic
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps
21
22.7
25
dB
Drain Efficiency
ηD
30.5
32
—
%
ACPR
—
- 47
- 45
dBc
IRL
—
- 20
- 20
-9
-7
Adjacent Channel Power Ratio
Input Return Loss
MRF6S9045NR1(MR1)
MRF6S9045NBR1(MBR1)
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc,
IDQ = 350 mA, Pout = 45 W, f = 921 - 960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
68
—
%
IRL
—
- 12
—
dB
P1dB
—
52
—
W
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
3
B2
B1
R1
VBIAS
+
+
C16
C17
C18
R3
+
R2
C15
RF
INPUT
C10
L2
VSUPPLY
+
C7
L1
C8
Z10
Z11
Z12
Z13
Z14
Z15
C11
C12
C13
RF
Z16 OUTPUT
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C14
C9
C1
DUT
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.215″
0.221″
0.500″
0.460″
0.040″
0.280″
0.087″
0.435″
0.057″
x 0.065″
x 0.065″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.525″
x 0.525″
x 0.525″
C3
C4
C6
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.530″ Taper
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.095″ x 0.065″ Microstrip
0.800″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
0.325″ x 0.065″ Microstrip
Taconic RF - 35 0.030″, εr = 3.5
Figure 1. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair Rite
B2
Ferrite Bead
2743021447
Fair Rite
C1, C7, C10, C14
47 pF Chip Capacitors
100B470JP500X
ATC
C2, C4, C12
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3
15 pF Chip Capacitor
100B150JP500X
ATC
C5, C6
12 pF Chip Capacitors
100B120JP500X
ATC
C8, C9
13 pF Chip Capacitors
100B130JP500X
ATC
C11
7.5 pF Chip Capacitor
100B7R5JP500X
ATC
C13
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15, C16, C17
10 µF, 35 V Tantalum Capacitors
T491D106K035AS
Kemet
C18
220 µF, 50 V Electrolytic Capacitor
678D227M025CG3D
Vishay
L1, L2
12.5 nH Inductor
A04T - 5
Coilcraft
R1
1 kΩ Chip Resistor
CRCW12061001F100
Vishay Dale
R2
560 kΩ Chip Resistor
CRCW12065603F100
Vishay Dale
R3
12 Ω Chip Resistor
CRC120612R0F100
Vishay Dale
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
4
RF Device Data
Freescale Semiconductor
C15
R2
C18
R3
R1
VDD
B1
VGG
C16 C17
B2
C7
C10
L2
C5
L1
C1
C4
C3
C6
CUT OUT AREA
C8
C2
C14
C9
C11
C13
C12
TO−270/272
Surface /
Bolt down
Figure 2. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Layout
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
22.4
34
ηD
33
32
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 350 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
22.2
31
−45
22
21.8
−50
ACPR
21.6
−55
IRL
21.4
21.2
−60
−65
ALT1
21
850
−70
860
870
880
890
900
−5
−10
−15
−20
−25
−30
910
IRL, INPUT RETURN LOSS (dB)
Gps
22.8
22.6
ACPR (dBc), ALT1 (dBc)
35
23
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
ηD
22.4
46
Gps, POWER GAIN (dB)
22.2
22
21.8
47
VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 350 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
21.6
45
−40
ACPR
21.4
−45
IRL
21.2
21
20.8
850
−50
ALT1
−55
−60
860
870
880
−5
−35
890
900
910
−10
−15
−20
−25
−30
IRL, INPUT RETURN LOSS (dB)
48
Gps
ACPR (dBc), ALT1 (dBc)
22.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg.
24
−10
Gps, POWER GAIN (dB)
23
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 520 mA
475 mA
350 mA
22
275 mA
21
175 mA
20
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 kHz Tone Spacing
19
0.5
−20
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 kHz Tone Spacing
−30
IDQ = 175 mA
−40
275 mA
350 mA
−50
520 mA
−60
475 mA
−70
1
10
100
300
1
Figure 5. Two - Tone Power Gain versus
Output Power
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
6
RF Device Data
Freescale Semiconductor
−10
0
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz
f2 = 880.1 MHz, Two −Tone Measurements
Center Frequency = 880 MHz
−20
−30
−40
3rd Order
−50
5th Order
−60
−70
7th Order
−80
1
10
100
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 350 mA
f1 = 880 MHz, f2 = 880.1 MHz, Two −Tone Measurements
Center Frequency = 880 MHz
−10
−20
3rd Order
−30
−40
5th Order
−50
7th Order
−60
−70
0.05 0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
100
54
Pout, OUTPUT POWER (dBm)
53
Ideal
P3dB = 48.6 dBm (72.44 W)
52
51
50
P1dB = 48.2 dBm (66.07 W)
49
Actual
48
47
VDD = 28 Vdc, IDQ = 350 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
46
45
44
23
24
25
26
27
28
30
29
31
32
33
Pin, INPUT POWER (dBm)
60
ηD
VDD = 28 Vdc, IDQ = 350 mA
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
25_C
ALT1
50
40
85_C
−25
25_C
−35
−30_C
25_C
−45
85_C
30
−55
Gps
TC = 25_C
−30_C
20
−65
ACPR
10
−75
0
1
10
−85
50
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulse CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
24
TC = −30_C
70
25_C
60
22
85_C
25_C
21
50
85_C
20
40
19
30
18
20
ηD
VDD = 28 Vdc
IDQ = 350 mA
f = 880 MHz
17
16
1
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
23
80
−30_C
Gps
10
0
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
23.5
23
22.5
22
21.5
21
20.5
20
19.5
32 V
19
VDD = 12 V
18.5
16 V
20 V
18
17.5
0
10
20
30 40
28 V
24 V
50
IDQ = 350 mA
f = 880 MHz
60
70
80
90
100
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
MTTF FACTOR (HOURS X AMPS2)
109
108
107
106
90
100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
1.2288 MHz
Channel BW
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability
on CCDF.
0.01
0.001
−70
−80
2
4
6
−ACPR @ 30 kHz
Integrated BW
−90
0.0001
0
−60
8
10
+ACPR @ 30 kHz
Integrated BW
−100
PEAK −TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9
−2.2
−1.5
−0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
f = 910 MHz
f = 850 MHz
Zsource
Zload
f = 910 MHz
f = 850 MHz
VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.42 + j0.30
3.05 + j1.27
865
0.42 + j0.44
3.16 + j1.33
880
0.45 + j0.60
3.31 + j1.33
895
0.48 + j0.74
3.43 + j1.20
910
0.50 + j0.85
3.35 + j1.05
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
11
NOTES
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
12
RF Device Data
Freescale Semiconductor
NOTES
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
E1
B
2X
E4
aaa
D
aaa
M
M
2X
D3
D A
2X
D1
b1
D A
PIN ONE ID
E
A
E5
E3
PIN 2
D2
PIN 3
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
EXPOSED
HEATSINK AREA
PIN 1
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
aaa
BOTTOM VIEW
F
c1 H
DATUM
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
ZONE J
A
A1
INCHES
MIN
MAX
.078
.082
.039
.043
.040
.042
.416
.424
.378
.382
.290
.320
.016
.024
.436
.444
.238
.242
.066
.074
.150
.180
.058
.066
.231
.235
.025 BSC
.193
.199
.007
.011
.004
MILLIMETERS
MIN
MAX
1.98
2.08
0.99
1.09
1.02
1.07
10.57
10.77
9.60
9.70
7.37
8.13
0.41
0.61
11.07
11.28
6.04
6.15
1.68
1.88
3.81
4.57
1.47
1.68
5.87
5.97
0.64 BSC
4.90
5.06
0.18
0.28
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
2X
A2
NOTE 7
E2
E5
D
CASE 1265 - 08
ISSUE H
TO - 270- 2
PLASTIC
MRF6S9045NR1(MR1)
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
14
RF Device Data
Freescale Semiconductor
2X
aaa
M
A
E1
B
r1
C A B
GATE
LEAD
D1
2X
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
DRAIN
LEAD
b1
aaa
M
D
C A
2
E
DRAIN ID
PIN 3
1
NOTE 8
E2
VIEW Y - Y
c1
H
F
ZONE "J"
DATUM
PLANE
A
A1
A2
7
E2
Y
Y
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 1337 - 03
ISSUE C
TO - 272- 2
PLASTIC
MRF6S9045NBR1(MBR1)
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
E
E1
E2
F
b1
c1
r1
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.928
.932
.810 BSC
.438
.442
.248
.252
.241
.245
.025 BSC
.193
.199
.007
.011
.063
.068
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
23.57
23.67
20.57 BSC
11.12
11.23
6.30
6.40
6.12
6.22
0.64 BSC
5.05
4.90
.18
.28
1.60
1.73
.10
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
15
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MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
Document Number: MRF6S9045
Rev. 1, 6/2005
16
RF Device Data
Freescale Semiconductor