SuperFET TM FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Typ. Rds(on)=0.058Ω • Ultra low gate charge (typ. Qg=210nC) • Low effective output capacitance (typ. Coss.eff=420pF) • 100% avalanche tested D G G D S TO-247 FDH Series TO-3P FDA Series G DS S Absolute Maximum Ratings Symbol Parameter FCH47N60 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS FCA47N60 Unit 600 V 47 29.7 A A (Note 1) 141 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 4.5 V/ns 417 3.33 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2007 Fairchild Semiconductor Corporation FCH47N60 / FCA47N60 / FCA47N60_F109 Rev.B2 1 Typ. Max. Unit -- 0.3 °C/W 0.24 -- -- 41.7 °C/W www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET August 2007 Device Marking Device Package FCH47N60 FCH47N60 TO-247 - - 30 FCA47N60 FCA47N60 TO-3P - - 30 FCA47N60 FCA47N60_F109 TO-3PN - - 30 Electrical Characteristics Symbol Reel Size Tape Width Quantity TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 47A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 23.5A -- 0.058 0.07 Ω gFS Forward Transconductance VDS = 40V, ID = 23.5A -- 40 -- S -- 5900 8000 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 3200 4200 pF -- 250 -- pF VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF VDS = 0V to 400V, VGS = 0V -- 420 -- pF VDD = 300V, ID = 47A RG = 25Ω -- 185 430 ns -- 210 450 ns -- 520 1100 ns -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V trr Reverse Recovery Time -- 590 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 47A dIF/dt =100A/µs -- 25 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 47A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 2 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 2 ID , Drain Current [A] 2 10 1 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 0 10 -1 0 10 10 150℃ 1 10 -55℃ ※ Note 1. VDS = 40V 2. 250µ s Pulse Test 0 10 2 1 10 25℃ 10 4 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.20 IDR , Reverse Drain Current [A] RDS(ON) [Ω ],Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.15 VGS = 10V 0.10 VGS = 20V 0.05 0 20 40 60 80 100 120 140 160 180 2 10 1 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0 200 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 1.0 1.2 1.4 1.6 Figure 6. Gate Charge Characteristics 30000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 20000 VDS = 100V VGS, Gate-Source Voltage [V] 25000 Coss 15000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 10000 0 -1 10 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] 5000 25℃ 10 ※ Note : TJ = 25℃ 0.00 Capacitance [pF] 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Crss 0 10 10 VDS = 250V VDS = 400V 8 6 4 2 ※ Note : ID = 47A 0 1 0 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 10 3 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 47 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 2 100 us 40 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 10 DC 0 10 ※ Notes : o 1. TC = 25 C -1 10 0 10 20 10 o 2. TJ = 150 C 3. Single Pulse -2 10 30 1 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [℃] Zθ JC(t), Thermal Response Figure 10. Transient Thermal Response Curve D = 0 .5 10 -1 ※ N o te s : 1 . Z θ J C( t) = 0 .3 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .2 0 .1 PDM 0 .0 5 t1 0 .0 2 10 -2 10 0 .0 1 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 4 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 5 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 6 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 7 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.00 ±0.20 16.50 ±0.30 3.00 ±0.20 +0.15 1.50 –0.05 3.50 ±0.20 2.00 ±0.20 4.80 ±0.20 3.80 ±0.20 9.60 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 8 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 10 FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET TRADEMARKS