SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability • SIEGET 25 - Line 1 VPS05605 Siemens Grounded Emitter Transistor 25 GHz f T - Line ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 420 AMs 1=B Q62702-F1591 2=E Package 3=C 4=E SOT-343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 35 Base current IB 3 Total power dissipation, T S ≤ 107 °C Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 Storage temperature Thermal Resistance T stg -65 ...+150 Junction - soldering point 1) RthJS Value ≤ 270 Unit V mA K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Jul-14-1998 1998-11-01 BFP 420 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4.5 5 6.5 V I CBO - - 200 nA I EBO - - 35 µA hFE 50 80 150 - fT 20 25 - Ccb - 0.15 0.24 Cce - 0.41 - Ceb - 0.55 - F - 1.05 1.4 Gms - 20 - 14 17 - dB IP3 - 22 - dBm P-1dB - 12 - DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V V(BR)CEO AC characteristics Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intersept point IC = 20 mA, VCE = 2 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt |S21|2 GHz pF dB 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group 22 Jul-14-1998 1998-11-01 BFP 420 Common Emitter S-Parameters f GHz S11 MAG ANG S21 S12 S22 MAG ANG MAG ANG MAG ANG 36.88 35.4 22.87 13.46 6.93 4.59 3.339 2.15 1.46 1.2 1 178.1 164.4 120.8 96.3 71.5 54.4 38.9 12.9 -16.8 -30.4 -39.5 0.0009 0.0075 0.0272 0.0398 0.062 0.09 0.115 0.156 0.172 0.174 0.172 95.8 79.3 58.7 55.2 53.5 48.6 40.5 25.3 5.4 -5 -11.3 0.96 0.946 0.633 0.399 0.227 0.134 0.109 0.136 0.229 0.319 0.405 -0.6 -12.3 -45.2 -60.3 -77.1 -96.7 -144.5 144.1 101.3 86.1 78.6 RN rn F50Ω 2) |S21|2 2) VCE = 2V, IC = 20mA 0.01 0.1 0.5 1 2 3 4 6 8 9 10 0.543 0.538 0.448 0.417 0.437 0.472 0.53 0.617 0.73 0.788 0.82 -2.5 -25.1 -99.3 -143.6 176.2 152.8 133.3 109.1 82.5 72.6 67 Common Emitter Noise Parameters f Fmin 1) Ga 1) Γopt GHz dB dB MAG ANG Ω - dB dB 0.19 0.11 0.11 0.19 0.28 0.37 0.44 30 64 116 165 -155 -130 -117 8.7 7.5 7 6.5 7 10 15 0.17 0.15 0.14 0.13 0.14 0.2 0.3 1.02 1.11 1.32 1.48 1.83 2.2 3.3 20.3 15.8 13.5 11.6 9.1 7 5.3 V CE = 2V, IC = 5mA 0.9 1.8 2.4 3 4 5 6 0.9 1.05 1.25 1.38 1.55 1.75 2.2 20.5 15.2 13 12.1 10.3 8.6 6.4 1) Input matched for minimum noise figure, output for maximum gain 2) Z S = ZL = 50Ω For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Jul-14-1998 1998-11-01 BFP 420 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.20045 aA BF = 72.534 - NF = 1.2432 - VAF = 28.383 V IKF = 0.48731 A ISE = 19.049 pA NE = 2.0518 - BR = 7.8287 - NR = 1.3325 - VAR = 19.705 V IKR = 0.69141 A ISC = 0.019237 A NC = 1.1724 - RB = 3.4849 Ω IRB = 0.72983 mA RBM = 8.5757 Ω RE = 0.31111 RC = 0.10105 Ω CJE = 1.8063 fF VJE = 0.8051 V MJE = 0.46576 - TF = 6.7661 ps XTF = 0.42199 - VTF = 0.23794 V ITF = 1 mA PTF = 0 deg CJC = 234.53 fF VJC = 0.81969 V MJC = 0.30232 - XCJC = 0.3 - TR = 2.3249 ns CJS = 0 F VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.73234 - TNOM 300 K - RS = 10 Ω L BI = 0.47 nH L BO = 0.53 nH L EI = 0.23 nH L EO = 0.05 nH L CI = 0.56 nH L CO = 0.58 nH C BE = 136 fF C CB = 6.9 fF C CE = 134 fF C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 3.5 fA N= 1.02 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BO L BI B B’ Transistor Chip E’ C BE C’ L CI L CO C C’-E’Diode C CE L EI L EO E EHA07389 Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Jul-14-1998 1998-11-01 BFP 420 For non-linear simulation: • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. • If you need simulation of thereverse characteristics, add the diode with the C’-E’- diode data between collector and emitter. • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: • Higher gain because of lower emitter inductance. • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Jul-14-1998 1998-11-01 BFP 420 Total power dissipation P tot = f (T A*, TS) Transition frequency fT = f (IC) * Package mounted on epoxy f = 2 GHz VCE = parameter in V 200 30 GHz mW 2 to 4 1.5 160 24 Ptot fT 1 22 140 TS 0.75 20 120 18 TA 100 16 14 80 12 0.5 10 60 8 40 6 4 20 2 0 0 20 40 60 80 100 120 °C 0 0 150 5 10 15 20 25 30 TA,TS mA 40 IC Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax/P totDC = f (tp) 10 3 10 1 Pmax / PDC K/W RthJS - 10 2 10 1 -7 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp Semiconductor Group Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 66 Jul-14-1998 1998-11-01 BFP 420 Power gain G ma, G ms, |S 21|2 = f ( f ) VCE = 2V, I C = 20 mA Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 44 30 dB dB 0.9 36 G 24 G 32 Gms 28 22 1.8 20 18 24 16 20 14 2.4 3 4 12 16 |S21 |2 5 10 Gma 12 8 8 6 6 4 4 0 0.0 2 1.0 2.0 3.0 4.0 GHz 0 0 6.0 4 8 12 16 20 24 32 mA 28 f 40 IC Power gain G ma, G ms = f (V CE) I C = 20 mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz f = parameter in GHz 0.30 30 dB 0.9 pF 24 G 22 Ccb 1.8 0.20 20 2.4 18 16 3 14 4 0.15 12 5 10 0.10 6 8 6 0.05 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 0.00 0 4.5 VCE Semiconductor Group Semiconductor Group 1 2 V 4 VCB 77 Jul-14-1998 1998-11-01 BFP 420 Noise figure F = f (IC) Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt VCE = 2 V, f = 1.8 GHz 4.0 3.0 dB dB 3.0 F F 2.0 2.5 2.0 1.5 ZS = 50 Ohm ZS = ZSopt 1.5 1.0 0.5 0.0 0 1.0 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 4 8 12 16 20 24 28 0.5 0.0 0 32 mA 38 4 8 12 16 20 28 mA 24 IC 36 IC Noise figure F = f ( f ) Source impedance for min. VCE = 2 V, ZS = Z Sopt Noise Figure versus Frequency VCE = 2 V, I C = 5 mA / 20 mA 3.0 +j50 dB +j25 +j100 +j10 2.0 F 2.4GHz 1.8GHz 3GHz 0 1.5 10 25 0.9GHz 50 100 0.45GHz 4GHz 1.0 5GHz -j10 IC = 20 mA IC = 5 mA 6GHz 0.5 -j100 -j25 -j50 0.0 0.0 1.0 2.0 3.0 4.0 GHz 6.0 f Semiconductor Group Semiconductor Group 88 Jul-14-1998 1998-11-01