FAIRCHILD KSC5086

KSC5086
KSC5086
HIgh Definition Color Display Horizontal
Deflection Output
(Damper Diode Built In)
• High Collector-Base Voltage : BVCBO=1500V
• High Speed Switching : tF=0.1µs (Typ.)
Equivalent Circuit
C
B
TO-3PF
1
50Ω typ.
1.Base
2.Collector
3.Emitter
E
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
Collector Current (Pulse)
Value
1500
Units
V
800
V
6
V
7
A
16
A
PC
Collector Dissipation (TC=25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICES
Parameter
Collector Cut-off Current (VBE=0)
Test Condition
VCE = 1400V, RBE = 0
Min.
Typ.
Max.
1
Units
mA
10
µA
200
mA
ICBO
Collector Cu-toff Current
VCB=800V, IE=0
IEBO
Emitter Cut-off Current
VEB = 4V, IC = 0
VEBO
Base-Emitter Breakdown Voltage
IE = 250mA, IC = 0
6
hFE
DC Current Gain
VCE = 5V, IC = 1.0A
8
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 5A, IB = 1.2A
5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 5A, IB = 1.2A
1.5
V
VF
Damper Diode Turn On Voltage
IF= 6A
tF
Fall Time
VCC = 200V, IC = 4A
IB1 = 0.8A, IB2 = -1.6A
RL = 50Ω
©2000 Fairchild Semiconductor International
40
V
2
V
0.2
µs
Rev. A, February 2000
KSC5086
Typical Characteristics
10
100
IB = 2A
VCE = 5V
IC[A], COLLECTOR CURRENT
IB = 1.8A
IB = 1.6A
IB = 1.4A
8
hFE, DC CURRENT GAIN
IB = 1.2A
IB = 1A
6
IB = 800mA
IB = 600mA
4
IB = 400mA
IB = 200mA
2
20
10
5
IB = 0A
0
0
2
4
6
8
1
0.1
10
1
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
VCE = 5V
9
IC[A], COLLECTOR CURRENT
VCE(sat)[V], SATURATION VOLTAGE
10
1
IC /IB=5
0.1
IC/IB=3
8
7
6
5
4
3
2
1
0.01
0.01
0.1
1
0
0.0
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
1
0.1
SINGLE PULSE
tf
O
T C=25 C
0.01
0.1
-0.1
-1
IB2[A], BASE CURRENT
Figure 5. Switching Time
©2000 Fairchild Semiconductor International
s
DC
s
1m
IC[A], COLLECTOR CURRENT
0µ
10
s
1
10
ms
10
tstg
0µ
30
RESISTIVE LOAD
VCC=200V
IC=4A
IB1=0.8A
tstg(µs), STORAGE TIME
tf (µs), FALL TIME
10
-10
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A, February 2000
KSC5086
Typical Characteristics (Continued)
100
80
10
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
70
IB2=-1A
CONSTANT
1
IC=5IB1 = 5IB2
L=500µH
0.1
60
50
40
30
20
10
SINGLE PULSE
0
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Reverse Bias Safe Operating Area
©2000 Fairchild Semiconductor International
10000
0
25
50
75
100
125
150
175
200
o
TC[ C], TEMPERATURE
Figure 2. Power Derating
Rev. A, February 2000
KSC5086
Package Demensions
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
°
22.00 ±0.20
23.00 ±0.20
10
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
0.85 ±0.03
2.00 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
10.00 ±0.20
(1.50)
2.00 ±0.20
2.00 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E