MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V72AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP. The mounting of SOJs and TSSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. This is a socket-type memory module ,suitable for easy interchange or addition of module. 85pin 1pin 94pin 10pin 95pin 11pin 124pin 40pin 125pin 41pin 168pin 84pin FEATURES Type name /RAS /CAS Address /OE access access access access time time time time Cycle Power time dissipation (max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.W) MH8V72AWZJ-5 50 13 25 13 90 2.70 MH8V72AWZJ-6 60 15 30 15 110 2.25 Utilizes industry standard 8M x 8 RAMs in SOJ and industry standard EEPROM in TSSOP 168-pin (84-pin dual dual in-line package) Single +3.3V(±0.3V) supply operation Low stand-by power dissipation 9.72mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level Low operation power dissipation MH8V72AWZJ -5 . . . . . . . . . . . . . . . . . . 3.24W(Max) MH8V72AWZJ -6 . . . . . . . . . . . . . . . . . . 2.92W(Max) All input are directly LVTTL compatible All output are three-state and directly LVTTL compatible Includes(0.22uF x 9) decoupling capacitors 4096 refresh cycle every 64ms Fast-page mode,Read-modify-write, /CAS before /RAS refresh,Hidden refresh capabilities Gold plating contact pads FRONT SIDE BACK SIDE Row Address A0 ~ A12 Column Address A0 ~ A9 APPLICATION Main memory unit for computers , Microcomputer memory MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 1 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM PIN CONFIGURATION Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Pin Name Vss DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 DQ8 Vss DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 CB0 CB1 Vss NC NC Vcc /WE0 /CAS0 /CAS1 /RAS0 /OE0 Vss A0 A2 A4 A6 A8 A10 A12 Vcc Vcc DU Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Vss /OE2 /RAS2 /CAS2 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 Vss DQ32 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Vss DU NC /CAS6 /CAS3 /WE2 Vcc NC NC CB2 CB3 Vss DQ16 DQ17 DQ18 DQ19 Vcc DQ20 NC DU NC Vss DQ21 DQ22 DQ23 Vss DQ24 DQ25 DQ26 DQ27 Vcc DQ28 DQ29 DQ30 DQ31 Vss NC NC NC SDA SCL Vcc DQ33 DQ34 DQ35 Vcc DQ36 DQ37 DQ38 DQ39 DQ40 Vss DQ41 DQ42 DQ43 DQ44 DQ45 Vcc DQ46 DQ47 CB4 CB5 Vss NC NC Vcc DU /CAS4 /CAS5 NC DU Vss A1 A3 A5 A7 A9 A11 NC Vcc DU DU /CAS7 DU Vcc NC NC CB6 CB7 Vss DQ48 DQ49 DQ50 DQ51 Vcc DQ52 NC DU NC Vss DQ53 DQ54 DQ55 Vss DQ56 DQ57 DQ58 DQ59 Vcc DQ60 DQ61 DQ62 DQ63 Vss NC NC SA0 SA1 SA2 Vcc NC: No Connect DU: Don't Use MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 2 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM BLOCK DIAGRAM /RAS0 /RAS2 /WE0 /WE2 /OE0 /OE2 /OE /W /RAS M5M467800AJ /CAS0 D0 /OE /CAS1 /W /RAS M5M467800AJ D1 /OE /W /RAS M5M467800AJ D2 /OE /W /RAS /CAS2 M5M467800AJ D3 /OE /W /RAS /CAS3 M5M467800AJ D4 A0~A12 Vcc DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 /OE /W /RAS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 /RAS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 /RAS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 /RAS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 M5M467800AJ /CAS4 D5 /OE /CAS5 /W M5M467800AJ D6 /OE /CAS6 /W M5M467800AJ D7 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 /OE /W /CAS7 M5M467800AJ D8 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 D0~D8 SCL C0.~C . .8 SDA A0 A1 A2 D0~D8 Vss MIT-DS-0093-0.5 EEPROM SA0 SA1 SA2 MITSUBISHI ELECTRIC ( 3 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Serial Presence Detect TABLE Bytes Function described SPD entry data SPD DATA entry(Hex) 0 Defines # bytes written into serial memory at module mfgr 128 80 1 Total # bytes of SPD memory device 256 Bytes 08 2 Fundamental memory type FPM DRAM 01 3 # Row Addresses on this assembly A0-A12 0D 4 # Column Addresses on this assembly A0-A9 0A 5 # Module Banks on this assembly 1bank 01 6 Data Width of this assembly... x72 48 7 ... Data Width continuation 0 00 8 Voltage interface standard of this assembly 9 RAS# access time of this assembly 10 CAS# access time of this assembly 11 DIMM Configuration type (Non-parity,Parity,ECC) 12 Refresh Rate/Type N/R(15.625uS) 00 13 DRAM width,Primary DRAM x8 08 3.3V LVTTL 02 -5 50ns 32 -6 60ns 3C -5 13ns 0D 15ns 0F ECC 02 -6 14 Error Checking DRAM data width x8 08 15-31 Reserved for future offerings open 00 32-61 Superset Memory type(may be used in future) open 00 62 SPD Data Revision Code Rev 1 01 63 Checksum for bytes 0-62 Check sum for -5 3D Check sum for -6 49 64-71 Manufacturers JEDEC ID code per JEP-106 MITSUBISHI 1CFFFFFFFFFFFFFF 72 Manufacturing location Miyoshi,Japan 01 Tajima,Japan 02 NC,USA 03 Germany 04 73-90 Manufacturer's Part Number MH8V72AWZJ-5 4D483856373241575A4A2D352D35202020202020 91-92 Revision Code PCB revision 93-94 Manufacturing date year/week code yy/ww 95-98 Assembly Serial Number serial number ssssssss MH8V72AWZJ-6 4D483856373241575A4A2D362D36202020202020 rrrr 99-125 Manufacturer Specific Data open 00 126-127 Reserved open 00 128-255 Open User Free-Form area not defined open 00 MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 4 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM FUNCTION The MH8V72AWZJ provide, in addition to normal read, write, and read-modify-write operations, a number of other functions, e.g., Fast page mode, /RASonly refresh, and delayed-write. The input conditions for each are shown in Table 1. Table 1 Input conditions for each mode Operation Read Write (Early write) Write (Delayed write) Read-modify-write /CAS before /RAS refresh Standby Inputs /RAS ACT ACT ACT ACT ACT NAC /CAS ACT ACT ACT ACT ACT DNC /W NAC ACT ACT ACT NAC DNC Input/Output /OE ACT DNC DNC ACT DNC DNC Row Column address address APD APD APD APD APD APD APD APD DNC DNC DNC DNC Input OPN VLD VLD VLD DNC DNC Output VLD OPN IVD VLD OPN OPN Refresh Remark YES YES YES YES YES NO Fast page mode identical Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid, APD : applied, OPN : open MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 5 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Vcc IO Pd Topr Tstg Parameter Supply voltage Output current Power dissipation Operating temperature Storage temperature Conditions With respect to Vss Ta=25°C Vcc Vss VIH VIL Parameter Supply voltage Supply voltage High-level input voltage, all inputs Low-level input voltage Unit V mA W °C °C (Ta=0~70°C, unless otherwise noted) (Note 1) RECOMMENDED OPERATING CONDITIONS Symbol Ratings -0.5~ 4.6 50 9 0~70 -40~125 Min 3.0 0 2.0 -0.3 Limits Nom Max 3.3 3.6 0 0 Unit Vcc+0.3 V V V 0.8 V Note 1 : All voltage values are with respect to Vss ELECTRICAL CHARACTERISTICS Symbol (Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted) (Note 2) Parameter Test conditions VOH VOL IOZ II High-level output voltage Low-level output voltage Off-state output current Input current (except /CAS) Input current (/CAS) I I (CAS) Average supply ICC1 (AV) current from Vcc operating (Note 3,4,5) IOH=-2.0mA IOL=2.0mA Q floating 0V ≤VOUT≤ Vcc 0V≤VIN≤Vcc+0.3, Other input pins=0V 0V≤VIN≤Vcc+0.3, Other input pins=0V -5 -6 ICC2 Supply current from Vcc , stand-by ICC4(AV) Average supply current from Vcc Fast-Page-Mode (Note 3,4,5) ICC6(AV) Average supply current from Vcc /CAS before /RAS refresh (Note 3,5) mode -5 -6 -5 -6 Min 2.4 0 -10 -90 -20 Limits Max Typ Vcc 0.4 10 90 20 /RAS, /CAS cycling tRC=tWC=min. output open 900 /RAS=/CAS =VIH, output open 9 4.5 Unit V V uA uA uA mA 810 /RAS=/CAS=WE≥Vcc -0.2, output open /RAS=VIL,/CAS cycling tPC=min. output open 810 mA mA 720 /CAS before /RAS refresh cycling tRC=min. output open 1170 mA 1080 Note 2: Current flowing into an IC is positive, out is negative. 3: Icc1 (AV), Icc3 (AV), Icc4 (AV) and Icc6 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate. 4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open. 5: Under condition of column address being changed once or less while /RAS=VIL and /CAS=VIH CAPACITANCE Symbol CI (/CAS) CI C(DQ) C(SCL) C(SDA) C(SA0~3) MIT-DS-0093-0.5 (Ta = 0~70°C, Vcc = 3.3V±0.3V, Vss = 0V, unless otherwise noted) Parameter Input capacitance, /CAS input Input capacitance, except /CAS input Input/Output capacitance,DATA Input capacitance, SPD clock Input/Output capacitance,SPD DATA Input capacitance, SPD address Test conditions VI=Vss f=1MHZ Vi=25mVrms Min Limits Typ Max 20 80 15 7 7 7 MITSUBISHI ELECTRIC ( 6 / 20 ) Unit pF pF pF pF pF pF 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM SWITCHING CHARACTERISTICS (Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted , see notes 6,13,14) Limits Symbol Parameter -5 Min tCAC tRAC tAA tCPA tOEA tCLZ tOFF tOEZ Access time from /CAS Access time from /RAS Column address access time Access time from /CAS precharge Access time from /OE Output low impedance time /CAS low Output disable time after /CAS high Output disable time after /OE high (Note 7,8) (Note 7,9) (Note 7,10) (Note 7,11) (Note 7) (Note 7) 5 0 0 (Note 12) (Note 12) Unit -6 Min Max 13 50 25 30 13 Max 15 60 30 35 15 5 0 0 13 13 15 15 ns ns ns ns ns ns ns ns Note 6: An initial pause of 500us is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles containing /CAS before /RAS refresh). Note the /RAS may be cycled during the initial pause . And any 8 /RAS or /RAS /CAS cycles are required after prolonged periods (greater than 64 ms) of /RAS inactivity before proper device operation is achieved. 7: Measured with a load circuit equivalent to 1 TTL load and 100pF.The reference levels for measuring of output signals are 2.0V(VOH)and 0.8V(VOL). 8: Assumes that tRCD ≥ tRCD(max), tASC ≥ tASC(max). 9: Assumes that tRCD ≤ tRCD(max) and tRAD ≤ tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC will increase by amount that tRCD exceeds the value shown. 10: Assumes that tRAD ≥ tRAD(max) and tASC ≤ tASC(max). 11: Assumes that tCP ≤ tCP(max) and tASC ≥ tASC(max). 12: tOFF (max) and tOEZ(max) defines the time at which the output achieves the high impedance state (IOUT ≤ I ± 10uA I ) and is not reference to VOH(min) or VOL(max). TIMING REQUIREMENTS (For Read, Write, Read-Modify-Write ,Refresh, and Fast-Page Mode Cycles) (Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted ,see notes 13,14) Limits Symbol -5 Parameter Min tREF tRP tRCD tCRP tRPC tCPN tRAD tASR tASC tRAH tCAH tDZC tDZO tCDD tODD tT Refresh cycle time /RAS high pulse width Delay time, /RAS low to /CAS low (Note15) Delay time, /CAS high to /RAS low Delay time, /RAS high to /CAS low /CAS high pulse width Column address delay time from /RAS low (Note16) Row address setup time before /RAS low Column address setup time before /CAS low(Note17) Row address hold time after /RAS low Column address hold time after /CAS low Delay time, data to /CAS low (Note18) Delay time, data to /OE low (Note18) Delay time, /CAS high to data (Note19) Delay time, /OE high to data (Note19) Transition time (Note20) -6 Max Min 64 30 14 5 0 8 10 0 0 8 8 0 0 13 13 1 37 25 10 50 Unit Max 64 40 14 5 0 10 12 0 0 10 10 0 0 15 15 1 45 30 13 50 ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note 13: The timing requirements are assumed tT =5ns. 14: VIH(min) and VIL(max) are reference levels for measuring timing of input signals.VIH(min) and VIL(max) of the switching characteristics are 2.0V and 0.8V respectively 15: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access time is controlled exclusively by tCAC or tAA.tRCD(min) is specified as tRCD(min) = tRAH(min) + 2tT + tASC(min) . 16: tRAD(max) is specified as a reference point only. If tRAD≥tRAD(max) and tASC≤tASC(max), access time is controlled exclusively by tAA. 17: tASC(max) is specified as a reference point only. If tRCD≥tRCD(max) and tASC≥tASC(max), access time is controlled exclusively by tCAC. 18: Either tDZC or tDZO must be satisfied. 19: Either tCDD or tODD must be satisfied. 20: tT is measured between VIH(min) and VIL(max). MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 7 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Read and Refresh Cycles Limits Symbol tRC tRAS tCAS tCSH tRSH tRCS tRCH tRRH tRAL tOCH tORH Parameter Read cycle time /RAS low pulse width /CAS low pulse width /CAS hold time after /RAS low /RAS hold time after /CAS low Read Setup time after /CAS high Read hold time after /CAS low Read hold time after /RAS low Column address to /RAS hold time -5 (Note 21) (Note 21) /CAS hold time after /OE low /RAS hold time after /OE low Min 90 50 15 50 15 0 0 10 25 13 13 -6 Max Min 110 60 15 60 15 0 0 10 30 15 15 10000 10000 Unit Max 10000 10000 ns ns ns ns ns ns ns ns ns ns ns Note 21: Either tRCH or tRRH must be satisfied for a read cycle. Write Cycle (Early Write and Delayed Write) Limits Symbol tWC tRAS tCAS tCSH tRSH tWCS tWCH tCWL tRWL tWP tDS tDH tOEH MIT-DS-0093-0.5 Parameter -5 Write cycle time /RAS low pulse width /CAS low pulse width /CAS hold time after /RAS low /RAS hold time after /CAS low Write setup time before /CAS low (Note 23) Write hold time after /CAS low /CAS hold time after /W low /RAS hold time after W low Write pulse width Data setup time before /CAS low or W low Data hold time after /CAS low or W low /OE hold time after /W low Min 90 50 15 50 15 0 10 15 15 10 0 10 13 MITSUBISHI ELECTRIC ( 8 / 20 ) Unit -6 Max 10000 10000 Min 110 60 15 60 15 0 10 15 15 10 0 10 15 Max 10000 10000 ns ns ns ns ns ns ns ns ns ns ns ns ns 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Read-Write and Read-Modify-Write Cycles Limits Symbol Parameter tRWC tRAS tCAS tCSH tRSH tRCS tCWD tRWD tAWD tCWL tRWL tWP tDS tDH Read write/read modify write cycle time /RAS low pulse width /CAS low pulse width /CAS hold time after /RAS low /RAS hold time after /CAS low Read setup time before /CAS low Delay time, /CAS low to /W low Delay time, /RAS low to /W low Delay time, address to /W low /CAS hole time after /W low /RAS hold time after /W low Write pulse width Data setup time before /W loe Data hold time after /W low tOEH /OE hold time after /W low -5 (Note22) (Note23) (Note23) (Note23) Min 130 85 50 85 50 0 30 65 40 15 15 10 0 10 Unit -6 Max Min 150 95 50 95 50 0 30 75 45 10000 10000 Max 10000 10000 15 15 10 0 10 10 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 15 Note 22: tRWC is specified as tRWC(min)=tRAC(max)+tODD(min)+tRWL(min)+tRP(min)+4tT. 23:tWCS, tCWD,tRWD ,tAWD and,tCPWD are specified as reference points only. If tWCS≥tWCS(min) the cycle is an early write cycle and the DQ pins will remain high impedance throughout the entire cycle. If tCWD≥tCWD(min), tRWD≥tRWD (min), tAWD≥tAWD(min) and tCPWD ≥tCPWD(min) (for Fast page mode cycle only), the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) is satisfied,the DQ (at access time and until /CAS or /OE goes back to VIH) is indeterminate. Fast Page Mode Cycle (Read, Early Write, Read -Write, Read-Modify-Write Cycle) (Note 24) Limits Symbol Parameter tPC tPRWC Fast page mode read/write cycle time tRAS tCP tCPRH tCPWD /RAS low pulse width for read write cycle /CAS high pulse width /RAS hold time after /CAS precharge Delay time, /CAS precharge to W low Fast page mode read write/read modify write cycle time (Note25) (Note26) (Note23) Max Min 35 70 85 5 30 30 Unit -6 -5 Max Min 40 75 100 10 35 35 51200 10 51200 15 ns ns ns ns ns ns Note 24: All previously specified timing requirements and switching characteristics are applicable to their respective Fast page mode cycle. 25: tRAS(min) is specified as two cycles of /CAS input are performed. 26: tCP(max) is specified as a reference point only. If tCP ≥ tCP(max),access time is controlled exclusively by tCAC. /CAS before /RAS Refresh Cycle (Note 27) Limits Symbol tCSR tCHR tRSR tRHR Parameter /CAS setup time before /RAS low /CAS hold time after /RAS low Read setup time before /RAS low Read hold time after /RAS low -5 Min 5 10 10 10 Unit -6 Max Min 10 10 10 10 Max ns ns ns ns Note 27: Eight or more /CAS before /RAS cycles instead of eight /RAS cycles are necessary for proper operation of /CAS before /RAS refresh mode. MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 9 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Timing Diagrams Read Cycle (Note 28) tRC tRAS tRP VIH RAS VIL tCSH tCRP tRCD tRPC tRSH tCAS tCRP VIH CAS VIL tASR VIH Address tRAD tRAL tRAH tASC ROW ADDRESS tASR tCAH tCPN COLUMN ADDRESS ROW ADDRESS VIL tRRH tRCH tRCS VIH W VIL tDZC DQ (INPUTS) tCDD VIH Hi-Z VIL tCAC tAA tOFF tCLZ DQ (OUTPUTS) VOH DATA VALID Hi-Z Hi-Z VOL tRAC tOEZ tDZO tOEA tOCH tODD VIH OE VIL tORH Note 28 Indicates the don't care input. VIH(min)≤VIN≤VIH(max) or VIL(min)≤VIN≤VIL(max) Indicates the invalid output. MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 10 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Write Cycle (Early write) tWC tRAS RAS tRP VIH VIL tCSH tCRP CAS tRCD tRSH tCAS tRPC tCRP VIH VIL tASR Address VIH tASR tRAH tASC ROW ADDRESS tCAH COLUMN ADDRESS ROW ADDRESS VIL tWCS W tWCH VIH VIL tDS DQ (INPUTS) VIH tDH DATA VALID VIL DQ (OUTPUTS) VOH Hi-Z VOL OE VIH VIL MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 11 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Write Cycle (Delayed write) tWC tRAS tRP VIH RAS VIL tCSH tCRP tRCD tRPC tRSH tCAS tCRP VIH CAS VIL tASR Address VIH tRAH tCAH tASC tASR ROW ADDRESS COLUMN ADDRESS ROW ADDRESS VIL tCWL tRWL tWP tRCS VIH W VIL tWCH tDZC DQ (INPUTS) VIH tDS tDH DATA VALID Hi-Z VIL tCLZ DQ (OUTPUTS) VOH Hi-Z Hi-Z VOL tDZO tOEH tOEZ tODD OE VIH VIL MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 12 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Read-Write, Read-Modify-Write Cycle tRWC tRAS tRP VIH RAS VIL tCSH tRCD tCRP tRPC tRSH tCAS tCRP VIH CAS VIL tRAD tASR Address VIH tRAH tCAH tASC ROW ADDRESS COLUMN ADDRESS VIL ROW ADDRESS tAWD tCWD tRWD tRCS W tASR tCWL tRWL tWP VIH VIL tDH tDS tDZC DQ (INPUTS) VIH DATA VALID Hi-Z VIL tCAC tAA tCLZ DQ (OUTPUTS) VOH DATA VALID Hi-Z VOL tODD tDZO OE Hi-Z tRAC tOEA tOEZ tOEH VIH VIL MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 13 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM CAS before RAS Refresh Cycle tRC tRP tRC tRAS tRAS tRP VIH RAS VIL tRPC tCSR tCHR tRPC tCSR tCHR tRPC tCRP VIH CAS VIL tCPN tASR Address VIH ROW ADDRESS COLUMN ADDRESS VIL tRCH tRSR tRHR tRSR tRHR tRCS VIH W VIL DQ (INPUTS) VIH VIL tOFF DQ (OUTPUTS) VOH Hi-Z VOL tOEZ VIH OE VIL MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 14 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Hidden Refresh Cycle (Read) (Note 29) tRC tRC tRAS tRP tRAS tRP VIH RAS VIL tCRP tRCD tRSH tCHR VIH CAS VIL tRAD tASR VIH Address tRAH tASC ROW ADDRESS tASR tCAH COLUMN ADDRESS ROW ADDRESS VIL tRCS tRRH tRAL VIH W VIL tDZC DQ (INPUTS) tCDD VIH Hi-Z VIL tCAC tAA tCLZ DQ (OUTPUTS) tOFF VOH Hi-Z Hi-Z DATA VALID VOL tRAC tDZO tOEA tORH tOEZ tODD VIL OE VIH Note 29: Early write, delayed write, read write or read modify write cycle is applicable instead of read cycle. Timing requirements and output state are the same as that of each cycle shown above. MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 15 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Fast Page Mode Read Cycle tRAS tRP VIH RAS VIL tCSH tCRP tPC tRCD tCAS tCP tCAS tRSH tCAS tCP VIH CAS VIL tCPRH tRAD tASR Address VIH tRAH tCAH tASC ROW ADDRESS tASC COLUMN-1 tCAH tASC COLUMN-2 tCAH tASR ROW ADDRESS COLUMN-3 VIL tRAL tRCS tRCS tRCH tRCH tRRH tRCS tRCH VIH W VIL tDZC DQ (INPUTS) tDZC tDZC VIH Hi-Z VIL Hi-Z tCAC tOFF tCAC tAA VOH tCAC tOFF tAA tCLZ tCLZ DATA VALID-1 Hi-Z tOFF tAA tCLZ DQ (OUTPUTS) tCDD DATA VALID-2 DATA VALID-3 VOL tRAC tDZO tCPA tOEA tOCH tOEZ tCPA tOEA tOCH tOEZ tOEA tOCH tOEZ VIL OE VIH tDZO tODD MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 16 / 20 ) tODD tDZO tODD tORH 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Fast Page Mode Write Cycle (Early Write) tRAS tRP VIH RAS VIL tCSH tCRP tRCD tPC tCAS tCP tCAS tRSH tCAS tCP VIH CAS VIL tASR Address VIH tRAH ROW ADDRESS tCAH tASC tCAH tASC COLUMN-1 COLUMN-2 tCAH tASC COLUMN-3 tASR ROW ADDRESS VIL tWCS tWCH tWCS tWCH tWCS tDS tDH tDS tDH tDS tWCH VIH W VIL DQ (INPUTS) DQ (OUTPUTS) OE VIH DATA VALID-1 DATA VALID-2 tDH DATA VALID-3 VIL VOH Hi-Z VOL VIH VIL MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 17 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Fast-Page Mode Write Cycle (Delayed Write) tRAS tRP VIH RAS VIL tCSH tCRP tRCD tRSH tPC tCAS tCAS tCP VIH CAS VIL tASR Address VIH tRAH ROW ADDRESS tASC tCAH tASC COLUMN-1 tCAH tRWL tCWL ROW ADDRESS COLUMN-2 VIL tCWL tRCS tASR tPCS tWP tWP VIH W VIL tWCH tDZC DQ (INPUTS) tWCH tDH tDS VIH DATA VALID-1 Hi-Z VIL tCLZ DQ (OUTPUTS) tDZC tDS tDH DATA VALID-2 Hi-Z tCLZ VOH Hi-Z Hi-Z Hi-Z VOL tDZO tOEZ tOEZ tODD tDZO tODD tOEH VIH OE VIL MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 18 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Fast Page Mode Read-Write,Read-Modify-Write Cycle tRAS RAS tRP VIH VIL tCSH tCRP tRWL tRCD tCAS tPRWC tCAS tCP CAS VIH VIL tRAD tASR VIH Address tRAH ROW ADDRESS tASC tCAH tASC COLUMN-1 tCAH tCWL ROW ADDRESS COLUMN-2 VIL tAWD tRCS tAWD tCWL tCWD tCWD tRCS tWP W tASR tWP VIH VIL tRWD tCPWD tDZC DQ (INPUTS) VIH tDZC tDS DATA VALID-1 Hi-Z tCAC VIL tDH tDS tAA tAA DATA VALID-1 Hi-Z tRAC tDZO OE tCLZ VOH VOL DATA VALID-2 Hi-Z tCAC tCLZ DQ (OUTPUTS) tDH tCPA tODD tOEA DATA VALID-1 Hi-Z tOEZ Hi-Z tODD tDZO tOEZ tOEH tOEA VIH VIL MIT-DS-0093-0.5 MITSUBISHI ELECTRIC ( 19 / 20 ) 26/Feb./1997 MITSUBISHI LSIs Preliminary Spec. Specifications subject to change without notice. MH8V72AWZJ -5, -6 FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM Unit:mm Package outline 133.35 3.0 8.6MAX 127.35 4.0 3.0 17.78 25.4 17.78 3.0 4.0 2-R2.0 2.0 2-ø3.0 2.0 6.35 1.27 29x1.27=36.83 8.89 1.27 6.35 43x1.27=54.61 9x1.27=11.43 24.495 MIT-DS-0093-0.5 42.18 MITSUBISHI ELECTRIC ( 20 / 20 ) 26/Feb./1997