MITSUBISHI QM30TB-2H

MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30TB-2H
•
•
•
•
•
IC
Collector current .......................... 30A
VCEX Collector-emitter voltage ......... 1000V
hFE
DC current gain............................... 75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
127
7.5 21 7.5 21 7.5 16.5
19
28.5
21.5
28.5
2–φ5.5
P
BuP EuP BvP EvP BwP EwP
W
N
BuN EuN BvN EvN BwN EwN
98
BvP
BwP
EuP
EvP
EwP
56
V
40
U
18
25
P
BuP
V
U
W
BuN
BvN
BwN
EuN
N
EvN
EwN
110
25.6
LABEL
17.5
26.5
Tab#110, t=0.5 Tab#250, t=0.8
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Tj=25°C, unless otherwise noted)
Ratings
Unit
VCEX (SUS)
Collector-emitter voltage
IC=1A, VEB=2V
1000
V
VCEX
Collector-emitter voltage
VEB=2V
1000
V
VCBO
Collector-base voltage
Emitter open
1000
V
VEBO
Emitter-base voltage
Collector open
7
V
IC
Collector current
DC
30
A
–IC
Collector reverse current
DC (forward diode current)
30
A
PC
Collector dissipation
TC=25°C
310
W
IB
Base current
DC
2
A
–ICSM
Surge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave)
300
A
Tj
Junction temperature
–40~+150
°C
Tstg
Storage temperature
–40~+125
°C
Viso
Isolation voltage
Parameter
Symbol
Conditions
Charged part to case, AC for 1 minute
—
Mounting torque
Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
2500
V
1.47~1.96
N·m
15~20
kg·cm
500
g
(Tj=25°C, unless otherwise noted)
Limits
Symbol
Test conditions
Parameter
Min.
Typ.
Max.
Unit
ICEX
Collector cutoff current
VCE=1000V, VEB=2V
—
—
1.0
mA
ICBO
Collector cutoff current
VCB=1000V, Emitter open
—
—
1.0
mA
IEBO
Emitter cutoff current
VEB=7V
—
—
200
mA
VCE (sat)
Collector-emitter saturation voltage
—
—
2.5
V
VBE (sat)
Base-emitter saturation voltage
—
—
3.5
V
–VCEO
Collector-emitter reverse voltage
–IC=30A (diode forward voltage)
—
—
1.8
V
hFE
DC current gain
IC=30A, VCE=2.8V/5V
75/100
—
—
—
—
—
2.5
µs
Switching time
VCC=600V, IC=30A, IB1=–IB2=0.6A
—
—
15
µs
—
—
3.0
µs
Transistor part (per 1/6 module)
—
—
0.4
°C/ W
Diode part (per 1/6 module)
—
—
1.5
°C/ W
Conductive grease applied (per 1/6 module)
—
—
0.2
°C/ W
IC=30A, IB=0.6A
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
100
DC CURRENT GAIN hFE
80
60
IB=2A
40
IB=1A
IB=0.5A
IB=0.3A
20
0
IB=0.1A
0
1.0
2.0
3.0
4.0
COLLECTOR-EMITTER VOLTAGE
10 0
7
5
4
3
2
2.0
2.4
2.8
BASE-EMITTER VOLTAGE
10 2
7
5
4
3
2
3.2
3.6
101
7
5
4
3
2
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0
7
5
4
3
2
VBE(sat)
VCE(sat)
IB=0.6A
Tj=25°C
Tj=125°C
10–1
10 0
VBE (V)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
IC=15A
4
IC=30A
3
IC=5A
2
1
Tj=25°C
Tj=125°C
2 3 4 5 7 10 –1
ton, ts, tf (µs)
5
SWITCHING TIME
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
Tj=25°C
Tj=125°C
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
0
10 –2
VCE=2.8V
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
BASE CURRENT IB (A)
VCE=2.8V
Tj=25°C
10 –1
1.6
VCE=5.0V
VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 1
7
5
4
3
2
10 3
7
5
4
3
2
10 1
10 0
5.0
SATURATION VOLTAGE
COLLECTOR CURRENT IC (A)
Tj=25°C
2 3 4 5 7 10 0
BASE CURRENT IB (A)
10 1
7
5
4
3
2
ts
VCC=600V
IB1=–IB2=0.6A
10 0
7
5
4
3
2
10 0
tf
ton
Tj=25°C
Tj=125°C
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
80
3
VCC=600V
IB1=0.6A
IC=30A
ts
10 1
7
5
4
3
2
COLLECTOR CURRENT IC (A)
SWITCHING TIME
ts, tf (µs)
2
tf
10 0
7
5
4
3
10–1
Tj=25°C
Tj=125°C
2 3 4 5 7 10 0
Tj=125°C
60
IB2=–1A
40
20
0
2 3 4 5 7 10 1
BASE REVERSE CURRENT –IB2 (A)
DERATING FACTOR OF F. B. S. O. A.
50µS
80
70
60
50
COLLECTOR
DISSIPATION
40
30
20
10
0
0
VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 45 710 1 2 3 4 5
0.5
0.4
0.3
0.2
0.1
0
10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
DERATING FACTOR (%)
10 0
7
5
3 TC=25°C
2
NON–REPETITIVE
10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
20
40
60
80 100 120 140 160
CASE TEMPERATURE
COLLECTOR REVERSE CURRENT –IC (A)
C
10 1
7
5
3
2
SECOND
BREAKDOWN
AREA
90
100µS
µS
500
S
D
COLLECTOR CURRENT IC (A)
VCE (V)
100
1m
COLLECTOR-EMITTER VOLTAGE
Zth (j–c) (°C/ W)
200 400 600 800 1000 1200 1400 1600
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
10 2
7
5
3
2
0
TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
10
7
5
4
3
2
10 1
7
5
4
3
2
10 0
0.4
Tj=25°C
Tj=125°C
0.8
1.2
1.6
2.0
2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 2
7
5
3
2
400
300
200
100
0
10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
10 1
7
5
3
2
10 2
Tj=25°C
Tj=125°C
Irr
10 1
trr (µs)
500
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
10 0 Qrr
10 0
7
5
3
VCC=600V
2 trr
IB1=–IB2=0.6A
–1
10
10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 4 5 710 1 2 3 4 5 7
2.0
Zth (j–c) (°C/ W)
1.6
1.2
0.8
0.4
0
10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
Feb.1999