MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TX-HB • • • • • IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 14 86 (N)– 20 74±0.25 14 B6 B4 B2 0 62.5 –0.2 20 (P)+ B5 B3 B1 W (10) 18.5 V U 11–M4 10.5 68 8 18.5 18.5 18.5 (10) 10 4–φ5.4±0.1 80±0.25 94 P (+) 13 28.2 24.8 13 B3 U B2 2 4 7 LABEL 26 B1 B4 B5 V W B6 N (–) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A –IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25°C 310 W IB Base current DC 3 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M4 — Mounting torque Mounting screw M5 B(E) terminal screw M4 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N·m 10~15 kg·cm 1.47~1.96 N·m 15~20 kg·cm 0.98~1.47 N·m 10~15 kg·cm 520 g (Tj=25°C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V,Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V, Collector open — — 80 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.0 V –VCEO Collector-emitter reverse voltage IC=–50A (diode forward voltage) — — 1.8 V hFE DC current gain IC=50A, VCE=2.5V 750 — — — — — 2.0 µs Switching time VCC=300V, IC=50A, IB1=100mA, –IB2=1.0A — — 8.0 µs — — 3.0 µs Transistor part (per 1/6 module) — — 0.4 °C/ W Diode part (per 1/6 module) — — 1.3 °C/ W Conductive grease applied (per 1/6 module) — — 0.2 °C/ W IC=50A, IB=67mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 100 80 IB=100mA IB=50mA IB=20mA 40 IB=10mA 20 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE BASE CURRENT IB (A) 10 –1 7 5 4 3 2 2.6 3.0 3.4 3.8 BASE-EMITTER VOLTAGE 4.2 10 0 VCE(sat) 7 5 4 3 IB=67mA 2 Tj=25°C Tj=125°C –1 10 0 10 2 3 4 5 7 10 1 VBE(sat) IC=50A 2 IC=25A IC=10A 0 10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 3 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25°C Tj=125°C 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) VBE (V) 4 1 Tj=25°C Tj=125°C 10 0 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=2.5V VCE (V) VCE=2.5V Tj=25°C 10 –2 2.2 10 3 7 5 4 3 2 10 2 5 COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 VCE=5.0V VCE (sat), VBE (sat) (V) 60 DC CURRENT GAIN hFE IB=150mA 10 4 7 5 4 3 2 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 1 7 5 4 3 2 ts 10 0 7 5 4 3 2 10–1 10 0 tf ton Tj=25°C Tj=125°C 2 3 4 5 7 10 1 VCC=300V IB1=100mA IB2=–1.0A 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 10 1 7 5 4 3 2 160 Tj=125°C ts tf 10 0 7 5 4 3 2 10–1 REVERSE BIAS SAFE OPERATING AREA COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) VCC=300V IB1=100mA IC=50A Tj=25°C Tj=125°C 10–1 2 3 4 5 7 10 0 140 120 100 BASE REVERSE CURRENT –IB2 (A) 40 20 10 0 7 5 3 2 TC=25°C NON-REPETITIVE –1 10 0 10 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 0.4 Zth (j–c) (°C/ W) 80 70 60 COLLECTOR DISSIPATION 50 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 0.5 0.3 0.2 0.1 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) SECOND BREAKDOWN AREA 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 100 DERATING FACTOR (%) 10 1 7 5 3 2 100 200 300 400 500 600 700 800 DERATING FACTOR OF F. B. S. O. A. 50 10 0µ 0µ s s DC COLLECTOR CURRENT IC (A) s s m 1m 10 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=–3.5A 60 0 2 3 4 5 7 10 1 IB2=–1.5A 80 10 2 7 5 4 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 0.2 0.6 1.0 1.4 Tj=25°C Tj=125°C 1.8 2.2 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 10 1 Irr Qrr VCC=300V IB1=100mA IB2=–1.0A trr (µs) 500 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 7 5 trr 3 Tj=25°C 2 Tj=125°C 10 –1 10 –1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE PART) 10 0 2 3 5 7 10 1 2 3 5 7 2.0 Zth (j–c) (°C/ W) 1.6 1.2 0.8 0.4 0 10 –3 2 3 5 7 10 –2 2 3 5 710 –1 2 3 5 7 10 0 TIME (s) Feb.1999