KSC5801 KSC5801 High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ.) Wide S.O.A For C-Monitor (48KHz) & C-TV (~21”) Equivalent Circuit C B TO-3PF 1 1.Base 50Ω typ. 2.Collector 3.Emitter E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 IC Collector Current (DC) 8 V A ICP Collector Current (Pulse) 16 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 1400V, VBE = 0 Min. Typ. Max. 1 Units V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 mA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 40 250 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1.0A VCE = 5V, IC = 5.0A 10 4 30 7 VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 1.2A 5 VBE(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 1.2A 1.5 V VF Damper Diode Turn On Voltage IF = 6A 2 V tF Fall Time VCC = 200V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 50Ω 0.2 µs V hermal Characteristics TC=25°C unless otherwise noted Symbol RθjC ©2000 Fairchild Semiconductor International Item Thermal Resistance, Junction to Case Max 2.5 Unit °C/W Rev. A, February 2000 KSC5801 Typical Characteristics 100 10 VCE = 5V IC[A], COLLECTOR CURRENT 9 7 hFE, DC CURRENT GAIN 8 1.8A IB = 2.0A 1.6A 6 1.4A 1.2A 1.0A 5 0.8A 0.6A 4 3 0.4A 2 IB = 0.2A O 125 C O 75 C 10 O -25 C O 25 C O -25 C O 125 C 1 0 0 1 2 3 4 5 6 7 8 9 1 0.1 10 1 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 2 IC = 5IB 1 VBE(sat)[mV], SATURATION VOLTAGE VBE(sat)[V], BASE-EMITTER VOLTAGE 10 O Tj = -25 C O Tj = 125 C O Tj = +25 C IC = 3IB 1 O -25 C O 25 C O 75 C O 125 C 0.4 0.1 1E-3 0.01 0.1 1 0.1 10 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Sautration Voltage 2 10 IC = 5IB VCE = 5V IC[A], COLLECTOR CURRENT VBE(sat)[mV], SATURATION VOLTAGE 10 1 O -25 C O 25 C O 75 C 8 6 4 2 O 125 C 0.4 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter Sautration Voltage ©2000 Fairchild Semiconductor International 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VBE[V], BASE-EMITTER VOLTAGE Figure 6. Base-Emitter On Voltage Rev. A, February 2000 KSC5801 Typical Characteristics (Continued) 1.0 0.8 6 IC = 2.0A tF[µS], FALL TIME tSTG[µS], STORAGE TIME 8 IC = 3.0A 4 IC = 2.5A 0.6 IC = 2.0A IC = 2.5A 0.4 IC = 3.0A 2 0.2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.0 1.4 0.2 dIB/dt[A/µ S], BASE CURRETN GRADIENT 0.6 0.8 1.0 1.2 1.4 dIB/dt[A/µS], BASE CURRETN GRADIENT Figure 7. Switching Characteristic Figure 8. Switching Characteristic 0.8 5 4 IC = 2.5A 0.6 IC = 3.0A tF[µ S], FALL TIME tSTG[µ S], STORAGE TIME 0.4 3 IC = 2.0A 2 0.4 IC = 3.0A IC = 2.5A IC = 2.0A 0.2 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.0 0.7 dI B/dt[A/µ S], BASE CURRETN GRADIENT 0.1 0.2 0.3 0.4 0.5 0.7 dIB/dt[A/µ S], BASE CURRETN GRADIENT Figure 9. Switching Characteristic Figure 10. Switching Characteristic 100 100 SINGLE PULSE IC = 5IB1 = -5IB2 L = 500µ H O IC[A], COLLECTOR CURRENT TC=25 C IC max(Pulse) IC[A], COLLECTOR CURRENT 0.6 100µ s 10 300µ s 10ms IC max(DC) 1ms DC 1 0.1 SINGLE PULSE 10 IB2 = -1A Const 1 0.1 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 11. Safe Operating Area ©2000 Fairchild Semiconductor International 2000 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 12. Reverse Bias Safe Operating Area Rev. A, February 2000 KSC5801 Typical Characteristics (Continued) 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 13. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5801 Package Demensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5801 Package Demensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000