Freescale Semiconductor, Inc. Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc... Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equipment. • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — –31 dBc • Integrated ESD Protection • Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. • TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 945 MHz, 45 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1265–08, STYLE 1 TO–270 PLASTIC MRF9045MR1 CASE 1337–03, STYLE 1 TO–272 DUAL LEAD PLASTIC MRF9045MBR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 177 1.18 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 175 °C Symbol Max Unit RθJC 0.85 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M2 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22–A113 Rating 3 NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF9045MR1 MRF9045MBR1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 µAdc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) 3 3.7 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.22 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 4 — S Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 70 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 38 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.7 — pF Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 19 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 38 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — –14 –9 dB Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 19 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — –13 — dB OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MRF9045MR1 MRF9045MBR1 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. B1, B2 C1, C7, C13, C14 C2, C8 C3 C4, C5, C8, C9 C6, C15, C16 C10 C11 C12 C17 L1, L2 Z1 Z2 Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case 2.7 pF Chip Capacitors, B Case 3.9 pF Chip Capacitor, B Case 10 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Surface Mount Capacitors 2.2 pF Chip Capacitor, B Case 4.7 pF Chip Capacitor, B Case 1.2 pF Chip Capacitor, B Case 220 µF, 50 V Electrolytic Capacitor 12.5 nH Inductors 0.20″ x 0.08″ Microstrip 0.57″ x 0.12″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 0.14″ x 0.32″ Microstrip 0.47″ x 0.32″ Microstrip 0.16″ x 0.32″ x 0.62″ Taper 0.18″ x 0.62″ Microstrip 0.56″ x 0.62″ Microstrip 0.33″ x 0.32″ Microstrip 0.14″ x 0.32″ Microstrip 0.36″ x 0.08″ Microstrip 1.01″ x 0.08″ Microstrip 0.15″ x 0.08″ Microstrip 0.29″ x 0.08″ Microstrip Figure 1. MRF9045MR1 930–960 MHz Broadband Test Circuit Schematic "#$% ! ! %&&'( CUT OUT AREA Freescale Semiconductor, Inc... MRF9045MR1 Figure 2. MRF9045MR1 930–960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9045MR1 MRF9045MBR1 3 Freescale Semiconductor, Inc. B1 B2 C1, C8, C13, C14 C2 C3 C4 C5, C6, C9, C10 C7, C15, C16 C11 C12 C17 L1, L2 WB1, WB2 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.4–2.5 pF Variable Capacitor, Johanson Gigatrim 3.6 pF Chip Capacitor, B Case 0.8–8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Chip Capacitors 7.5 pF Chip Capacitor, B Case 0.6–4.5 pF Variable Capacitor, Johanson Gigatrim 220 µF Electrolytic Chip Capacitor 12.5 nH Surface Mount Inductors 10 mil Brass Wear Blocks Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.215″ x 0.270″ Microstrip 0.315″ x 0.270″ Microstrip 0.160″ x 0.270″ x 0.520″ Taper 0.285″ x 0.520″ Microstrip 0.140″ x 0.270″ Microstrip 0.450″ x 0.270″ Microstrip 0.250″ x 0.060″ Microstrip 0.720″ x 0.060″ Microstrip 0.490″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip Taconic RF–35–0300, εr = 3.5 Figure 3. MRF9045MBR1 930–960 MHz Broadband Test Circuit Schematic ! CUT OUT AREA ! Freescale Semiconductor, Inc... MRF9045MB 900 MHz )*+ Figure 4. MRF9045MBR1 930–960 MHz Broadband Test Circuit Component Layout MRF9045MR1 MRF9045MBR1 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS &% η <+ ) ,)$%);)9 =34 ) >&$1#? + , + + + + + + + + -. )0)1( 2,345 Figure 5. Class AB Broadband Circuit Performance : 8 ; ; @ ; ; @ 8 1 - 8 ,34 - 8 @ ,34 @ @ + + + + : 8 ; + ; + ; + 8 1 + - 8 ,34. - 8 @ ,34 + @ + 8 1 : 8 ; - 8 ,34 - 8 @ ,34 &% .66!76 625 9A ) + + 9A ) + &% + ) + 8 1 : 8 ; - 8 ,34 η @ 9. !7 2! >5 7 9. !7 2! >5 @ Figure 8. Intermodulation Distortion Products versus Output Power Figure 9. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA Figure 7. Intermodulation Distortion versus Output Power Figure 6. Power Gain versus Output Power + 9. !7 2! >5 7 9. !7 2! >5 7 + ; For More Information On This Product, Go to: www.freescale.com η.6 677B62C5 &% .66!76 625 @ ,. 7, 6> 6215 ,. 7, 6> 6215 Freescale Semiconductor, Inc... + .6 67 >>625 8 1 9 8 ! 275 : 8 ; ,.6 7, > 6215 &% .66!76 625 h .6 77B62C5 MRF9045MR1 MRF9045MBR1 5 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... 9 .6 6!762! >567 # 8 ! &% .66!76 625 # 8 @ ! # 8 @ ! : 8 ; - 8 ,34 <+ ) ,)$%);)9 =34 ) >&$1#? . 7 2 >5 Figure 10. Output Voltage versus Supply Voltage (MRF9045MR1) MRF9045MR1 MRF9045MBR1 6 8 1 : 8 ; - 8 ,34 - 8 @ ,34 η + &% + , + η.6 677B62C5 ,. 7, 6> 6215 TYPICAL CHARACTERISTICS 9. !7 2! >5 7 Figure 11. Power Gain, Efficiency and IMD versus Output Power (MRF9045MBR1) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... 8 Ω '$ %1) - 8 ,34 - 8 ,34 - 8 ,34 - 8 ,34 8 . : 8 ; . 9 8 ! 275 f MHz Zload Ω Zsource Ω 930 0.81 – j0.25 2.03 + j0.09 945 0.85 – j0.05 2.03 + j0.28 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. 9&9 ,$91A#? )9<= )*#1) ) )%9 &9 ,$91A#? )9<= Z source Z load Figure 12. Series Equivalent Input and Output Impedance (MRF9045MR1) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9045MR1 MRF9045MBR1 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... 8 Ω '$ - 8 ,34 - 8 ,34 - 8 ,34 %1) - 8 ,34 8 . : 8 ; . 9 8 ! 275 Zload Ω f MHz Zsource Ω 930 0.75 – j0.6 2.65 – j0.05 945 0.72 – j0.6 2.60 – j0.05 960 0.70 – j0.5 2.55 – j0.02 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. 9&9 ,$91A#? )9<= )*#1) ) )%9 &9 ,$91A#? )9<= Z source Z load Figure 13. Series Equivalent Input and Output Impedance (MRF9045MBR1) MRF9045MR1 MRF9045MBR1 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9045MR1 MRF9045MBR1 9 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS E1 B 2X D3 2X E4 $$$ D $$$ , , 2X D1 b1 E Freescale Semiconductor, Inc... PIN ONE ID A ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ E5 E3 PIN 2 D2 PIN 3 EXPOSED HEATSINK AREA PIN 1 DATUM PLANE INCHES MIN MAX @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @6> @ @ @ @ @ DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa BOTTOM VIEW F c1 H 7>D @ ,7>D 3@ @ 77 ,7>> 7 7> 7 >,7 B@,+@ @ , 7 +3+ > 7 7 > 7 ! 3 37 7 !377 37 7 7E > 37 > B 37 37 7@ @ ,7>> “F “7F 7 , >@ ! 7 > > @ 7 >7@ ,7>> “F “7F 7 , ,>, 3 7 7 7G ,7 , 7 +3+@ @ ,7> " 7> 7 , >@ ! 7 , > >3 7 @ 7E7>> 37 " ,7> , E,, , 7 @ @ ,> + + ++ 7 7 7,7 , 7 +3+@ @ ,7> 7> ! 3 7 “HF B@ @ ,7>> “F “7F 7 , >@ ! 7 > > @ 7 >7@ ,7>> “F “7F 7 , ,>, 3 7 7 7G ,7 , 7 ++@ ZONE J A A1 MILLIMETERS MIN MAX @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @6> @ @ @ @ @ > B7 D @ @ 7 @ >7 2X A2 NOTE 7 E2 E5 D CASE 1265–08 ISSUE G TO–270 PLASTIC MRF9045MR1 MRF9045MR1 MRF9045MBR1 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 2X r1 $$$ , A E1 B GATE LEAD D1 2X DRAIN LEAD b1 $$$ Freescale Semiconductor, Inc... ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ , D 2 E DRAIN ID PIN 3 1 NOTE 8 E2 VIEW Y–Y c1 H F ZONE "J" DATUM PLANE A A1 A2 7 E2 Y Y C SEATING PLANE > B7 D @ @ 7 @ >7 CASE 1337–03 ISSUE B TO–272 DUAL LEAD PLASTIC MRF9045MBR1 MOTOROLA RF DEVICE DATA 7>D @ ,7>D 3@ @ 77 ,7>> 7 7> 7 >,7 B@,. @ @ , 7 +3+ > 7 37 7 > 7 ! 3 37 7 !377 37 7 7E > 37 > B 37 37 7@ @ ,7>> FF F7F 7 , >@ ! 7 > > @ 7 >7@ ,7>> FF F7F 7 , ,>, 3 7 7 7,7 , 7 +3+@ @ ,7> F"F 7> 7 , >@ ! 7 , > >3 7 @ 7E7>> 37 F"F ,7> , E,, , 7 @ @ ,> + + ++ 7 7 7,7 , 7 +3+@ @ ,7> 7> ! 3 7 FHF B@ @ >>3 3 77>7 > 37 7E>7 7 37 37 >@ DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa For More Information On This Product, Go to: www.freescale.com INCHES MIN MAX @ @ @ @ @ @ @ @ @6> @ @ @ @ @ @ @6> @ @ @ @ @ @ @ MILLIMETERS MIN MAX @ @ @ @ @ @ @ @ @6> @ @ @ @ @ @ @6> @ @ @ @ @ @ @ MRF9045MR1 MRF9045MBR1 11 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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