MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc... RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2200 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. • Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power — 900 mW PEP Power Gain — 13 dB Efficiency — 38% • High Gain, High Efficiency and High Linearity • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel. 800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 4.58 0.037 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Symbol Value (1) Unit RθJC 27.3 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case @ 85°C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 0 (Minimum) Machine Model M1 (Minimum) Charge Device Model C2 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MW4IC001MR4 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 50 µA) VGS(th) 2 3 5 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 10 mA) VGS(Q) 2 3.7 5 Vdc Drain - Source On - Voltage (VGS = 10 V, ID = 0.05 A) VDS(on) — 0.48 0.9 Vdc Forward Transconductance (VDS = 10 V, ID = 0.1 A) gfs — 0.05 — S Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 45 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.62 — pF Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Gps — 13 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) ηD — 29 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) IMD — - 28 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) IRL — - 18 — dB P1dB — 0.85 — W Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Gps 12 13 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) ηD 35 38 — % Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) IRL - 10 - 16 — dB OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz) MW4IC001MR4 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VGG C1 VDD C2 + Z6 C7 C6 C8 Z7 R1 RF INPUT DUT Z1 Z2 C3 Freescale Semiconductor, Inc... C9 Z3 Z4 Z5 Z9 Z10 Z11 L2 Z12 C5 L1 C10 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 R2 Z8 C11 C12 Z13 RF OUTPUT C13 C4 1.331″ 0.126″ 0.065″ 0.065″ 0.680″ 1.915″ 0.120″ x 0.044″ x 0.076″ x 0.175″ x 0.195″ x 0.145″ x 0.055″ x 0.141″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 PCB 0.062″ x 0.044″ to 0.615″ Taper 0.082″ x 0.615″ Microstrip 0.075″ x 0.044″ Microstrip 0.625″ x 0.044″ Microstrip 1.375″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 1. MW4IC001MR4 900 MHz Test Circuit Schematic Table 1. MW4IC001MR4 900 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 0.1 µF, 100 V Chip Capacitors C1210C104K5RACTR Kemet C2, C3, C5, C7 43 pF, 500 V Chip Capacitors 100B430JP500X ATC C4 12 pF, 500 V Chip Capacitor 100B120JP500X ATC C8 22 µF, 35 V Tantalum Chip Capacitor T491X226K035AS Kemet C9 4.7 pF, 500 V Chip Capacitor 100B4R7CP500X ATC C10, C11 0.6 - 4.5 pF, 500 V Variable Capacitors 27271SL Johanson C12 2.7 pF, 500 V Chip Capacitor 100B2R7CP500X ATC C13 3.3 pF, 500 V Chip Capacitor 100B3R3CP500X ATC L1 5.6 nH Chip Inductor 0805 Series AVX L2 10 nH Chip Inductor 1008 Series ATC R1 100 W Chip Resistor CRCW12061001F100 Dale R2 20 W Chip Resistor CRCW120620R0F100 Dale MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MW4IC001MR4 3 Freescale Semiconductor, Inc. VGG C1 V DD C8 C2 C6 C7 C9 R1 C3 C4 C10 L1 R2 C12 L2 C5 C11 C13 Freescale Semiconductor, Inc... MW4IC001MR4 900 MHz Rev 2 Figure 2. MW4IC001MR4 900 MHz Test Circuit Component Layout MW4IC001MR4 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 50 −15 IRL 46 42 −17 ηD −19 −21 38 VDS = 28 Vdc Pout = 0.9 W (PEP) IDQ = 14 mA Two −Tone Measurement 100 kHz Tone Spacing 34 30 26 22 −23 −25 −27 −29 IM3 −31 18 Gps 14 10 855 860 −33 865 870 875 880 885 890 895 900 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS - 900 MHz −35 905 Figure 3. Two-Tone Performance versus Frequency 55 13 50 12 45 P1dB 11 40 10 35 9 30 8 25 VDS = 28 Vdc IDQ = 14 mA f = 880 MHz 7 20 6 0 0.2 0.4 0.6 0.8 1.0 −25 15 1.4 1.2 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 14 60 ηD Gps ηD, DRAIN EFFICIENCY (%) 15 VDS = 28 Vdc f1 = 880 MHz f2 = 880.1 MHz −30 IDQ = 8 mA −35 10 mA 18 mA −40 16 mA −45 14 mA Two −Tone Measurement 100 kHz Tone Spacing 12 mA −50 −55 0.01 0.1 1 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) PEP Figure 4. CW Performance versus Output Power Figure 5. Intermodulation Distortion versus Output Power −25 10 −25 −30 VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz f2 = 880.1 MHz −35 −40 −45 3rd Order −50 −55 5th Order −60 Two −Tone Measurement 100 kHz Tone Spacing −65 7th Order −70 0.01 0.1 1 10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f1, FREQUENCY (MHz) −30 −35 −40 10 MHz −45 1 MHz Tone Spacing = 100 kHz −50 0.01 0.1 VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz, f2 = f1 + Tone Spacing Two −Tone Measurement 1 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Third Order Intermodulation Distortion versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MW4IC001MR4 5 10 Freescale Semiconductor, Inc. Z5 VGG Z12 + C1 VDD C2 + Z4 C4 C6 Z11 R1 RF INPUT Z8 DUT Z1 Z2 Z3 Z6 Z9 Z13 Z10 Z15 Z14 RF OUTPUT Z7 C5 C3 Freescale Semiconductor, Inc... C7 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.018″ 0.495″ 0.893″ 1.340″ 0.912″ 0.241″ 0.076″ 0.294″ x 0.044″ x 0.296″ x 0.500″ x 0.022″ x 0.022″ x 0.500″ x 0.150″ x 0.150″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.067″ x 0.264″ Microstrip 0.457″ x 0.492″ Microstrip 0.719″ x 0.022″ Microstrip 1.149″ x 0.022″ Microstrip 0.677″ x 0.434″ Microstrip 0.095″ x 0.264″ Microstrip 0.772″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 8. MW4IC001MR4 1990 MHz Test Circuit Schematic Table 2. MW4IC001MR4 1990 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet C2, C4 10 pF, 500 V Chip Capacitors 100B100JCA500X ATC C3, C5 10 pF, 500 V Chip Capacitor 600S100JW ATC C7 0.6 - 4.5 pF, 500 V Variable Capacitor 27271SL Johanson 1 kW Chip Resistor CRCW12061021F100 Dale R1 VDD VGG C1 C6 C2 C4 R1 C3 C5 C7 MW4IC001MR4 1990 MHz Rev 3 Figure 9. MW4IC001MR4 1990 MHz Test Circuit Component Layout MW4IC001MR4 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 40 35 30 −11 IRL −14 ηD −17 −20 25 VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA Two−Tone Measurement, 100 kHz Tone Spacing 20 −23 15 Gps −26 10 IMD −29 −32 5 0 1930 1940 1950 1960 1970 1980 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS - 1990 MHz −35 1990 14.4 56 48 G ps , POWER GAIN (dB) 14.0 13.6 40 13.2 32 P1dB VDD = 28 Vdc IDQ = 12 mA f = 1990 MHz 12.8 ηD 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16 1.1 1.2 1.3 5th Order −55 −60 7th Order −75 0.01 16 mA −50 −55 9.6 mA 12 mA VDD = 28 Vdc f1 = 1990 MHz, f2 = 1990.1 MHz Two −Tone Measurement 100 kHz Tone Spacing 0.01 0.1 1 Figure 12. Intermodulation Distortion versus Output Power 3rd Order −70 −45 Figure 11. CW Performance versus Output Power −40 −65 −40 Pout, OUTPUT POWER (WATTS) PEP −35 −50 IDQ = 20 mA −35 Pout, OUTPUT POWER (WATTS) −30 −45 −30 −60 VDD = 28 Vdc IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz Two−Tone Measurement, 100 kHz Tone Spacing 0.1 1 IMD, THIRD ORDER INTERMODULATION (dBc) 12.4 0.1 24 ηD, DRAIN EFFICIENCY (%) Gps IMD, INTERMODULATION DISTORTION (dBc) Figure 10. Two-Tone Performance versus Frequency IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f1, FREQUENCY (MHz) −30 −35 −40 10 MHz −45 −50 1 MHz VDD = 28 Vdc IDQ = 12 mA f1 = 1990 MHz f2 = f1 + Tone Spacing Two −Tone Measurement −55 100 kHz −60 0.01 0.1 1 OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 13. Intermodulation Distortion Products versus Output Power Figure 14. Third Order Intermodulation Distortion versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MW4IC001MR4 7 Freescale Semiconductor, Inc. Z5 VGG Z12 + C1 VDD C2 + Z4 C4 C6 Z11 R1 RF INPUT Z8 DUT Z1 Z2 Z3 Z6 Z9 Z13 Z10 Z15 Z14 RF OUTPUT Z7 C5 C3 Freescale Semiconductor, Inc... C7 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.267″ 0.058″ 0.758″ 1.073″ 1.361″ 0.205″ 0.109″ 0.210″ x 0.044″ x 0.044″ x 0.256″ x 0.022″ x 0.022″ x 0.332″ x 0.150″ x 0.150″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.106″ x 0.344″ Microstrip 0.783″ x 0.500″ Microstrip 0.847″ x 0.022″ Microstrip 1.055″ x 0.022″ Microstrip 0.291″ x 0.387″ Microstrip 0.050″ x 0.287″ Microstrip 0.950″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 15. MW4IC001MR4 2170 MHz Test Circuit Schematic Table 3. MW4IC001MR4 2170 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet C2, C4 10 pF, 500 V Chip Capacitors 100B100JCA500X ATC C3, C5 10 pF, 500 V Chip Capacitor 600S100JW ATC C7 0.6 - 4.5 pF, 500 V Variable Capacitor 27271SL Johanson 1 kW Chip Resistor CRCW12061021F100 Dale R1 VDD VGG C1 C6 C4 C2 R1 C5 C3 C7 MW4IC001MR4 2170 MHz Rev 3 Figure 16. MW4IC001MR4 2170 MHz Test Circuit Component Layout MW4IC001MR4 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 32 −13 IRL 27 ηD VDD = 28 Vdc Pout = 0.9 W (PEP) IDQ = 12 mA Two−Tone Measurement, 100 kHz Tone Spacing 22 17 −18 −23 IMD −28 Gps 12 2110 2120 2130 2140 2150 −33 2170 2160 f, FREQUENCY (MHz) Figure 17. Two-Tone Performance versus Frequency Gps 50 13.0 40 12.6 30 12.2 ηD 20 P1dB VDD = 28 Vdc IDQ = 12mA f = 2170 MHz 11.8 11.4 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VDD = 28 Vdc, IDQ = 12 mA, f1 = 2170 MHz, f2 = 2170.1 MHz Two−Tone Measurement, 100 kHz Tone Spacing 3rd Order 5th Order −60 −70 −45 9.6 mA 12 mA −50 0.1 1 Figure 19. Intermodulation Distortion versus Output Power −55 −65 16 mA −40 Figure 18. CW Performance versus Output Power −45 −50 20 mA −35 Pout, OUTPUT POWER (WATTS) PEP −35 −40 −30 0.01 IMD,THIRD ORDER INTERMODULATION (dBc) −30 −25 VDD = 28 Vdc f1 = 2170 MHz, f2 = 2170.1 MHz Two−Tone Measurement 100 kHz Tone Spacing IDQ = 7.2 mA Pout, OUTPUT POWER (WATTS) PEP −20 −25 −20 ηD, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 13.4 60 IMD, INTERMODULATION DISTORTION (dBc) 13.8 IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... TYPICAL CHARACTERISTICS - 2170 MHz 7th Order 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP Figure 20. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA 1 −20 −25 −30 −35 VDD = 28 Vdc IDQ = 12 mA f1 = 2170 MHz f2 = f1 + Tone Spacing Two −Tone Measurement 1 MHz 10 MHz −40 −45 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 Figure 21. Third Order Intermodulation Distortion versus Output Power For More Information On This Product, Go to: www.freescale.com MW4IC001MR4 9 Freescale Semiconductor, Inc. f = 860 MHz Zload f = 900 MHz Freescale Semiconductor, Inc... Zo = 50 Ω Zsource f =860 MHz f = 900 MHz VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP f MHz Zsource Ω Zload Ω 860 27.853 + j5.908 15.492 + j63.669 865 28.617 + j6.078 15.592 + j68.687 870 29.458 + j6.285 15.788 + j69.799 875 30.306 + j6.422 15.835 + j70.863 880 31.223 + j6.567 15.975 + j71.920 885 32.194 + j6.660 16.094 + j73.091 890 33.228 + j6.656 16.286 + j74.159 895 34.293 + j6.624 16.344 + j75.236 900 35.424 + j6.508 16.628 + j76.283 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 22. Series Equivalent Source and Load Impedance MW4IC001MR4 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. f = 2180 MHz Zload f = 1920 MHz f = 2100 MHz f = 2000 MHz Zload f = 2180 MHz f = 2000 MHz Freescale Semiconductor, Inc... f = 2100 MHz Zsource f = 1920 MHz Zsource Zo = 50 Ω Zo = 50 Ω VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz Zsource Ω Zload Ω f MHz Zsource Ω Zload Ω 1920 4.238 + j15.142 7.764 + j28.829 2100 2.667 + j12.903 5.892 + j26.374 1930 4.322 + j15.362 8.056 + j29.352 2110 2.671 + j13.070 6.092 + j26.739 1940 4.490 + j15.466 8.436 + j29.727 2120 2.664 + j13.224 6.281 + j27.094 1950 4.605 + j15.711 8.809 + j30.249 2130 2.694 + j13.431 6.540 + j27.510 1960 4.752 + j15.904 9.183 + j30.763 2140 2.703 + j13.511 6.748 + j27.795 1970 4.905 + j16.050 9.598 + j31.213 2150 2.702 + j13.700 6.996 + j28.182 1980 5.071 + j16.236 10.030 + j31.690 2160 2.745 + j13.952 7.300 + j28.678 1990 5.262 + j16.446 10.546 + j32.237 2170 2.754 + j14.026 7.562 + j28.987 2000 5.487 + j16.632 11.054 + j32.726 2180 2.784 + j14.206 7.862 + j29.411 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 23. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MW4IC001MR4 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A F 3 B D 1 2 R L NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. 4 Freescale Semiconductor, Inc... N K 0.35 (0.89) X 45_" 5 _ Q 10_DRAFT U H ZONE V P ÉÉ ÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉÉÉ ÉÉÉ ÉÉÉÉ ÉÉÉ 4 ZONE W C Y Y E 2 1 3 G DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X S ZONE X VIEW Y - Y STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE CASE 466 - 03 ISSUE C PLD- 1.5 PLASTIC INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MW4IC001MR4 12 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MW4IC001MR4/D