MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance – 1.0 pF @ 20 V Low Reverse Leakage – 200 nA (max) High Reverse Voltage – 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE 1 MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value Unit 70 Vdc Max Unit 2 PLASTIC SOD–323 CASE 477 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C Thermal Resistance Junction to Ambient 635 °C/W –55 to +150 °C Junction and Storage Temperature Range 1 CATHODE *FR–5 Minimum Pad 2 ANODE ORDERING INFORMATION Device MMDL770T1 Semiconductor Components Industries, LLC, 2001 January, 2000 – Rev. 0 1 Package Shipping SOD–323 3000 / Tape & Reel Publication Order Number: MMDL770T1/D MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 µA) Min Typ Max 70 – – – 0.5 1.0 – 9.0 200 Unit V(BR)R Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) CT Reverse Leakage (VR = 35 V) IR Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) VF Volts pF nAdc Vdc – 0.7 1.0 TYPICAL CHARACTERISTICS MMBD770T1 1.6 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.0 f = 1.0 MHz 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 1. Total Capacitance 100 MMBD770T1 TA = 100°C 1.0 TA = 75°C 0.1 80 90 100 Figure 2. Minority Carrier Lifetime IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 10 30 50 70 40 60 IF, FORWARD CURRENT (mA) 20 MMBD770T1 10 TA = 85°C TA = -40°C 1.0 0.01 0.001 TA = 25°C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 0.1 50 Figure 3. Reverse Leakage TA = 25°C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 2 1.6 2.0 MMDL770T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B DIM A B C D E H J K E C J MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 mm inches SOD–323 Soldering Footprint http://onsemi.com 3 0.83mm 0.033 MMDL770T1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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