SUR70N02-04P Vishay Siliconix New Product N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0037 @ VGS = 10 V 37 0.0061 @ VGS = 4.5 V 29 APPLICATIONS VDS (V) 20 D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested D D D D D Synchronous Buck Converter − Low Side D Synchronous Rectifier − Secondary Rectifier G S Top View Ordering Information: SUR70N02-04P—E3 SUR70N02-04P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC= 25_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipation TC = 25_C Operating Junction and Storage Temperature Range Unit V 37a ID 70b IDM 100 IS 37 IAS 30 EAS A 45 mJ 8.3a PD W 93 TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.3 1.6 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72776 S-32697—Rev. A, 19-Jan-04 www.vishay.com 1 SUR70N02-04P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V gfs 0.0037 0.0052 VGS = 4.5 V, ID = 20 A Forward Transconductanceb mA A 0.0028 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.0047 VDS = 15 V, ID = 20 A W 0.0061 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 4500 VGS = 0 V, VDS = 10 V, f = 1 MHz 0.5 1.1 1.8 34 153 W 11 VDS = 10 V, VGS = 4.5 V, ID = 50 A nC 10 VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 800 tr Turn-Off Delay Timec 1520 tf 15 25 11 20 35 55 15 25 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 45 90 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 140 160 140 120 I D − Drain Current (A) 120 I D − Drain Current (A) VGS = 10 thru 4 V 100 80 3V 60 40 80 60 TC = 125_C 40 25_C 20 20 2V −55_C 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 100 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72776 S-32697—Rev. A, 19-Jan-04 SUR70N02-04P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 120 0.007 100 25_C 80 125_C 0.006 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 60 40 20 0.005 VGS = 4.5 V 0.004 VGS = 10 V 0.003 0.002 0.001 0 0.000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) Ciss 4000 3000 Coss 2000 Crss 1000 0 60 75 VDS = 10 V ID = 50 A 8 6 4 2 0 0 4 8 12 16 20 0 15 VDS − Drain-to-Source Voltage (V) 1.4 On-Resistance vs. Junction Temperature 45 Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A 1.2 1.0 0.8 0.6 −50 30 Qg − Total Gate Charge (nC) I S − Source Current (A) 1.6 r DS(on)− On-Resistance ( W ) (Normalized) 100 Gate Charge 10 V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 5000 80 ID − Drain Current (A) Capacitance 6000 60 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72776 S-32697—Rev. A, 19-Jan-04 150 175 TJ = 150_C TJ = 25_C 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUR70N02-04P Vishay Siliconix New Product THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 32 10, 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 40 24 16 8 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 ms 1s 10 s 100 s dc 1 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72776 S-32697—Rev. A, 19-Jan-04