VISHAY VSKD196

VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power diodes in four basic
configurations
• Simple mounting
• UL approved file E78996
INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
APPLICATIONS
PRODUCT SUMMARY
• DC motor control and drives
IF(AV)
165 A to 230 A
Type
Modules - Diode, High Voltage
• Battery chargers
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VSK.166..
VSK.196..
VSK.236..
UNITS
165
195
230
A
100
100
100
°C
260
305
360
50 Hz
4000
4750
5500
60 Hz
4200
4980
5765
TC
IF(RMS)
IFSM
I2t
50 Hz
80
113
151
60 Hz
73
103
138
798
1130
1516
I2t
VRRM
TJ
Range
A
kA2s
kA2s
400 to 1600
V
- 40 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
VSK.166
VSK.196
VSK.236
Document Number: 94357
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
IRRM
AT 150 °C
mA
20
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1
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state
current at case temperature
Maximum RMS on-state current
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
IFSM
Maximum
I2t
for fusing
°C
360
5500
4200
4980
5765
3350
4000
4630
3500
4200
4850
80
113
151
73
103
138
56
80
107
52
73
98
t = 0.1 ms to 10 ms, no voltage reapplied
798
1130
1516
No voltage
reapplied
t = 10 ms
100 % VRRM
reapplied
No voltage
reapplied
t = 8.3 ms
t = 10 ms
Sine half wave,
initial TJ =
TJ maximum
100 % VRRM
reapplied
t = 8.3 ms
I2t
A
100
305
t = 10 ms
I 2t
230
100
4750
t = 8.3 ms
Maximum I2t for fusing
195
100
260
t = 8.3 ms
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
0.73
0.69
0.7
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ maximum
0.88
0.78
0.83
Low level value on-state
slope resistance
rt1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
1.5
1.3
1.2
High level value on-state
rt2
(I >  x IF(AV)), TJ maximum
1.26
1.2
1.07
VFM
IFM =  x IF(AV), TJ = 25 °C, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.43
1.38
1.46
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
UNITS
165
4000
t = 10 ms
Maximum peak, one-cycle
on-state, non-repetitive
surge current
VSK.166 VSK.196 VSK.236
A
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
IRRM
TJ = 150 °C
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted,
t=1s
VSK.166 VSK.196 VSK.236
UNITS
20
mA
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
TJ, TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and greased
0.05
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads.
4 to 6
Mounting
torque ± 10 %
Approximate weight
IAP to heatsink
busbar to IAP
0.2
0.16
°C
0.14
K/W
Case style
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2
UNITS
Nm
200
g
7.1
oz.
INT-A-PAK
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94357
Revision: 20-May-10
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
R CONDUCTION PER JUNCTION
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.166
0.025
0.03
0.038
0.055
0.089
0.018
0.031
0.041
0.057
0.089
VSK.196
0.016
0.019
0.024
0.034
0.053
0.012
0.02
0.026
0.035
0.054
VSK.236
0.009
0.010
0.014
0.018
0.025
0.008
0.012
0.015
0.019
0.025
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
250
VSK.166.. Series
RthJC (DC) = 0.20 K/W
140
130
Ø
120
Conduction angle
110
100
30°
90
60°
90°
120°
80
180°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
200
180°
120°
90°
60°
30°
150
RMS limit
100
Ø
Conduction angle
50
0
70
0
40
80
120
160
200
0
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
40
80
120
160
200
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
150
300
VSK.166.. Series
RthJC (DC) = 0.20 K/W
140
130
Ø
120
Conduction period
110
30°
100
60°
90°
120°
90
80
180°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
VSK.166.. Series
TJ = 150 °C
DC
180°
120°
90°
60°
30°
250
200
RMS limit
150
Ø
100
Conduction period
VSK.166.. Series
Per junction
TJ = 150 °C
50
DC
0
70
0
50
100
150
200
250
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Document Number: 94357
Revision: 20-May-10
300
0
50
100
150
200
250
300
Average Forward Current (A)
Fig. 4 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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3
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
3500
3000
2500
2000
4000
1500
3000
2500
2000
1500
1000
VSK.166.. Series
VSK.166.. Series
500
1000
1
10
Fig. 6 - Maximum Non-Repetitive Surge Current
K/
W
W
0.7
W
K/W
150
R
-Δ
Maximum Total Forward
Power Loss (W)
200
K/
K/
0
3
.12
VSK.166.. Series
Per junction
TJ = 150 °C
0.5
W
=0
100
0.
K/
A
150
4
W
DC
0.
R thS
250
K/
250
0.2
300
50
1
Pulse Train Duration (s)
300
200
0.1
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Total Forward
Power Loss (W)
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
3500
Peak Half Sine Wave
Forward Current (A)
4000
100
50
0
0
50
100
150
200
250
0
25
Total RMS Output Current (A)
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1800
1600
+
~
1400
1200
180°
(Sine)
180°
(Rect)
1000
800
600
2 x VSK.166.. Series
Single phase bridge
Connected
TJ = 150 °C
400
200
0
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
1800
1600
R
th
SA
1400
0.0
=
4K
1200
0.
/W
0.0
6K
/W
0.1
K/W
0.16
K/W
0.25
K/W
0.5 K/W
1000
800
600
400
12
K/
W
-Δ
R
200
0
0
100
200
300
400
500
0
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94357
Revision: 20-May-10
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
600
3 x VSK.166.. Series
Three phase bridge
Connected
TJ = 150 °C
400
200
0
100
200
300
400
Total Output Current (A)
1000
800
0.1
K/W
6K
600
0.25
400
/W
K/W
0.5 K/W
200
0
500
25
50
300
Maximum Average Forward
Power Loss (W)
VSK.196.. Series
RthJC (DC) = 0.16 K/W
140
130
Ø
120
Conduction angle
110
100
30°
60°
90
90°
120°
80
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
150
Maximum Allowable Case
Temperature (°C)
W
0.1
0
0
180°
70
180°
120°
90°
60°
30°
250
200
RMS limit
150
Ø
100
Conduction angle
VSK.196.. Series
TJ = 150 °C
50
0
0
50
100
150
200
250
0
40
80
120
160
200
Average Forward Current (A)
Average Forward Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
150
350
VSK.196.. Series
RthJC (DC) = 0.16 K/W
140
130
Ø
120
Conduction period
110
30°
100
60°
90°
90
120°
180°
80
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
K/
R
-Δ
800
06
1200
W
K/
1000
0.
02
0.
-
1400
=
1200
120°
(Rect)
SA
~
R th
1400
W
K/
Maximum Total Power Loss (W)
1600
04
0.
Maximum Total Power Loss (W)
1600
DC
180°
120°
90°
60°
30°
300
250
RMS limit
200
150
Ø
Conduction period
100
VSK.196.. Series
Per junction
TJ = 150 °C
50
DC
70
0
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 11 - Current Ratings Characteristics
Document Number: 94357
Revision: 20-May-10
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 13 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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5
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peal Half Sine Wave
Forward Current (A)
4000
3500
3000
2500
2000
1500
5000
VSK.196.. Series
10
3500
3000
2500
2000
K/W
W
R
-Δ
Maximum Total Forward
Power Loss (W)
W
W
K/
0.7
.12
=0
0
200
K/
W
50
0.5
SA
VSK.196.. Series
Per junction
TJ = 150 °C
250
K/
R th
100
3
K/
150
0.
0.4
2
300
0.
300
200
1.0
Fig. 15 - Maximum Non-Repetitive Surge Current
350
250
0.1
Pulse Train Duration (s)
350
DC
VSK.196.. Series
1000
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Maximum Total Forward
Power Loss (W)
4000
1500
1000
1
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
4500
Peak Half Sine Wave
Forward Current (A)
4500
K/W
150
100
50
0
0
50
100
150
200
250
0
300
25
50
75
100
125
150
Total RMS Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
W
R
-Δ
0
200
K/
200
400
02
2 x VSK.196.. Series
Single phase bridge
Connected
TJ = 150 °C
0.
400
600
=
600
800
SA
800
0.
06
0.0
8 K K/W
/W
0.1
2K
/W
0.1
6K
/W
0.25
K/W
0.4 K
/W
0.7 K/W
1000
W
K/
~
180°
(Sine)
180°
(Rect)
R th
+
1000
Maximum Total Power Loss (W)
1200
04
0.
Maximum Total Power Loss (W)
1200
0
0
100
200
300
Total Output Current (A)
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400
0
25
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94357
Revision: 20-May-10
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
800
600
3 x VSK.196.. Series
Three phase bridge
Connected
TJ = 150 °C
400
200
K/
W
0.0
1200
8K
/W
1000
R
-Δ
1000
06
W
K/
1200
0.
1400
12
0.
120°
(Rect)
-
=
1400
1600
SA
~
R th
+
1600
W
K/
Maximum Total Power Loss (W)
1800
04
0.
Maximum Total Power Loss (W)
1800
0.1
2K
/W
6K
/W
0.25
K/W
0.4 K
/W
800
0.1
600
400
200
0
0
0
100
200
300
400
500
0
600
25
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Total Output Current (A)
Fig. 18 - On-State Power Loss Characteristics
350
VSK.236.. Series
RthJC (DC) = 0.14 K/W
150
140
Ø
130
Conduction angle
120
110
30°
100
60°
90°
90
120°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
160
250
RMS limit
200
150
Ø
Conduction angle
100
VSK.236.. Series
TJ = 150 °C
50
180°
0
80
50
0
100
150
200
0
250
50
100
150
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 19 - Current Ratings Characteristics
Fig. 21 - On-State Power Loss Characteristics
150
450
VSK.236.. Series
RthJC (DC) = 0.14 K/W
140
130
Ø
120
Conduction period
110
30°
100
60°
90
90°
120°
80
180°
DC
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
180°
120°
90°
60°
30°
300
DC
180°
120°
90°
60°
30°
400
350
300
RMS limit
250
200
Ø
Conduction period
150
VSK.236.. Series
Per junction
TJ = 150 °C
100
50
0
70
0
50
100
150
200
250
300
350
400
0
50
100
150
200
250
300
350
400
Average Forward Current (A)
Average Forward Current (A)
Fig. 20 - Current Ratings Characteristics
Fig. 22 - On-State Power Loss Characteristics
Document Number: 94357
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
7
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Curren (A)
4500
4000
3500
3000
2500
2000
5500
VSK.236.. Series
4500
4000
3500
3000
2500
2000
VSK.236.. Series
1500
1000
1500
1
10
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulse (A)
Fig. 23 - Maximum Non-Repetitive Surge Current
0.1
1.0
Pulse Train Duration (s)
Fig. 24 - Maximum Non-Repetitive Surge Current
450
450
400
Maximum Total Forward
Power Loss (W)
VSK.236.. Series
Per junction
TJ = 150 °C
100
50
K/
W
5K
300
/W
250
0.5
200
0.7
150
R
-Δ
150
W
W
200
K/
0.3
K/
250
350
0.1
300
25
=
350
0.
16
0.
SA
DC
R th
400
Maximum Total Forward
Power Loss (W)
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
5000
Peak Half Sine Wave
Forward Current (A)
5000
K/W
K/W
100
50
0
0
0
50
100
150
200
250
300
350
0
25
50
75
100
125
150
Total RMS Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 25 - On-State Power Loss Characteristics
1600
1400
+
~
1200
-
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
1600
180°
(Sine)
180°
(Rect)
1000
800
600
2 x VSK.236.. Series
Single phase bridge
Connected
TJ = 150 °C
400
200
R
0.
04
1400
th
SA
K/
W
=
1200
1000
800
600
400
0.
02
0.0
6K
0.0 /W
8K
/W
0.1
2K
/W
0.1
6K
/W
0.25 K
/W
0.4 K/W
K/
W
-Δ
R
200
0
0
0
100
200
300
400
Total Output Current (A)
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500
0
25
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Fig. 26 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94357
Revision: 20-May-10
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
2500
+
~
2000
-
120°
(Rect)
1500
1000
3 x VSK.236.. Series
Three phase bridge
Connected
TJ = 150 °C
500
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
2500
0
100
200
300
400
500
600
Total Output Current (A)
SA
4K
=
0.
02
/W
0.0
1500
K/
W
6K
/W
0.1
1000
-Δ
R
K/W
0.16
K/W
0.3 K/W
500
0.7 K/W
700
1000
TJ = 25 °C
TJ = 150 °C
10
VSK.166.. Series
Per junction
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TJ = 25 °C
TJ = 150 °C
100
10
VSK.196.. Series
Per junction
1
1.0
2.0
3.0
4.0
5.0
Instantaneous On-State Voltage (V)
Fig. 29 - On-State Voltage Drop Characteristics
Document Number: 94357
Revision: 20-May-10
75
100
125
150
TJ = 25 °C
1000
TJ = 150 °C
100
10
VSK.236.. Series
Per junction
1
0
1.0
2.0
3.0
4.0
5.0
Instantaneous On-State Voltage (V)
Fig. 30 - On-State Voltage Drop Characteristics
ZthJC - Transient Thermal Impedance
10 000
0
50
10 000
4.0
Instantaneous On-State Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
1000
25
Maximum Allowable Ambient
Temperature (°C)
Fig. 27 - On-State Power Loss Characteristics
10 000
100
0
Instantaneous On-State Current (A)
Instantaneous On-State Current (A)
th
0.0
0
0
Instantaneous On-State Current (A)
R
2000
1
Steady state value
(DC operation)
0.1
VSK.166.. Series
0.01
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 31 - Thermal Impedance ZthJC Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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9
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A
1
Steady state value
(DC operation)
0.1
VSK.196.. Series
0.01
0.01
0.1
1
Instantaneous On-State Current (A)
Instantaneous On-State Current (A)
(INT-A-PAK Power Modules)
1.0
Steady state value
(DC operation)
0.1
VSK.236.. Series
0.01
0.01
10
Square Wave Pulse Duration (s)
0.1
1.0
10
Square Wave Pulse Duration (s)
Fig. 32 - Thermal Impedance ZthJC Characteristics
Fig. 33 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
D
236
1
2
3
/
16
PbF
4
5
1
-
Module type
2
-
Circuit configuration (see Circuit Configuration table)
3
4
-
Current rating: IF(AV)
Voltage code x 100 = VRRM
5
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
www.vishay.com
10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94357
Revision: 20-May-10
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKD...
~
Two diodes doubler circuit
+
-
D
+
~
-
VSKC...
+
Two diodes common cathodes
-
-
C
+
-
VSKJ...
-
Two diodes common anodes
+
+
J
+
+
-
VSKE...
-
Single diode
+
E
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 94357
Revision: 20-May-10
www.vishay.com/doc?95254
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
11
Outline Dimensions
Vishay Semiconductors
INT-A-PAK DBC
28 (1.10)
9 (0.33)
30 (1.18)
DIMENSIONS in millimeters (inches)
Ø 6.5 (Ø 0.25)
80 (3.15)
23 (0.91)
7
6
5
4
14.5
23 (0.91)
(0.57)
35 (1.38)
17 (0.67)
1
2
3
66 (2.60)
37 (1.44)
3 screws M6 x 10
94 (3.70)
Document Number: 95254
Revision: 11-Dec-07
For technical questions, contact: [email protected]
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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