SANYO 2SK2859

Ordering number:EN5851
N Channel Silicon MOSFET
2SK2859
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
· Low On resistance.
· Ultrahigh-speed switching.
· 4V drive.
unit:mm
2149
[2SA2859]
5
4
1.8max
1
1.27
0.595
0.43
0.2
1 : No Contact
2 : Source
3 : No Contact
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.1
1.5
5.0
6.0
4.4
0.3
8
SANYO : SOP8
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
100
V
±15
V
2
A
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (10002×0.8mm)
8
A
1.6
W
150
˚C
–55 to +150
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1498TS (KOTO) TA-0859 No.5851-1/4
2SK2859
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Drain-to-Source Cutoff Current
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=2A
RDS(on)1
ID=2A, VGS=10V
ID=2A, VGS=4V
Forward Transfer Admittance
Static Drain-to-Source
On-State Resistance
RDS(on)2
typ
Unit
max
100
VDS=100V, VGS=0
VGS=±12V, VDS=0
Gate-to-Souce Cutoff Voltage
min
ID=1mA, VGS=0
IDSS
IGSS
Gate-to-Souce Leakage Current
Ratings
Conditions
V
100
µA
±10
µA
2.0
V
0.3
0.4
Ω
0.4
0.55
1.0
2.5
4
S
Ω
Input Capacitance
Ciss
VDS=20V, f=1MHz
380
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
80
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
10
ns
tr
See specified Test Circuit
13
ns
td(off)
See specified Test Circuit
70
ns
tf
See specified Test Circuit
30
IS=2A, VGS=0
1.0
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltafe
VSD
ns
1.2
V
Switching Time Test Circuit
VDD=50V
10V
0V
VIN
ID=2A
RL=25Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
P.G
2SK2859
50Ω
S
I D – VDS
3.8
2.0V 2.2V
0
2
4
6
8
2
1
0
10
0
1
|yfs| – ID
10
7
C
25˚
˚C
3
–25
Tc=
2
3
4
5
6
C
75˚
1.0
7
5
RDS(on) – VDS
0.7
VDS=10V
5
2
Gate-to-Source Voltage,VGS – V
Static Drain-to-Source
On-State Resistance,RDS (on) – Ω
Forward Transfer Admittance, | yfs| – S
Drain-to-Source Voltage,VDS – V
2
–25
˚C
2.4V
2
3
C
2.6V
4
75˚
2.8V
5
25˚C
Drain Current,ID – A
3.0V
Tc=
.0V
S =4
VG
Drain Current,ID – A
6
3.2V
4
0
VDS=10V
7
3.4V
8
6
I D – VGS
8
V
3.6
V
10
Tc=25˚C
ID=2A
0.6
0.5
0.4
0.3
0.2
0.1
3
2
0
5
7 0.1
2
3
5
7
1.0
Drain Current,ID – A
2
3
5
7 10
0
2
4
6
8
10
12
14
Gate-to-Source Voltage,VDS – A
No.5851-2/4
2SK2859
RDS(on) – TC
0.7
4V
V
=
GS
0.4
V
=10
V GS
0.3
0.2
–40
0
40
80
120
Ciss
3
2
Coss
100
7
5
3
2
0.1
0
–80
f=1MHz
1000
7
5
Ciss,Coss,Crss – pF
Static Drain-to-Source
On-State Resistance,RDS (on) – Ω
0.6
0.5
Ciss, Coss, Crss – VDS
3
2
ID=2A
Crss
10
7
5
0
160
4
Case Temperature,Tc – ˚C
SW Time – ID
5
3
Drain Current , ID – A
Switching Time,SW Time – ns
td(off)
tf
3
2
tr
10
td(on)
7
5
5 7 0.1
2
2
7 1.0
5
3
5
3
7 10
Drain Current,ID – A
20
24
28
32
ASO
,,,,,,
,,,,,,
,,,,,,
,,,,,,
,,,,,,
10µs
10
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0µ
1m
3 ID
2
s
10
s
ms
D
C
10
nte o p
0m
d o er
s
n a ati
cer o n
am
ic
Operation in this
bo
ard
area is limited
(10
by RDS(on).
00
mm2
×0
.8m
m)
Ta=25˚C
1pulse
2 3
(M
ou
5 7 1.0
2
3
5 7 10
2
3
5 7 100
2
Drain-to-Source Voltage,VDS – V
PD – Ta
1.8
Allowable Power Dissipation,PD – W
16
10 I DP
7
5
2
7
5
12
2
VDD=50V
VGS=10V
100
8
Drain-to-Source Voltage,VDS – V
1.6
M
ou
1.4
nt
1.2
ed
on
ac
er
1.0
am
ic
bo
ar
0.8
d(
10
00
m
0.6
m2
×0
.8
0.4
m
m
)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature,Ta – ˚C
No.5851-3/4
2SK2859
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 1998. Specifications and information herein are subject
to change without notice.
PS No.5851-4/4