Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. · The FP105 is formed with 2 chips, one being equivalent to the 2SB1123 and the other the SB0505CP, placed in one package. unit:mm 2088A [FP105] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO VCEO –60 V Collector-to-Emitter Voltage –50 V Emitter-to-Base Voltage VEBO –6 V IC –2 A I CP –4 Collector Current Collector Current (Pulse) –400 A Base Current IB Collector Dissipation PC 1.3 W Junction Temperature Tj 150 ˚C VRRM VRSM 50 V 55 V IO 500 mA Mounted on ceramic board (250mm2×0.8mm) mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current IFSM 5 A Junction Temperature Tj 50Hz sine wave, 1cycle –55 to +125 ˚C Storage Temperature Tstg –55 to +125 ˚C Continued on next page. Marking:105 Electrical Connection 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/62094MT (KOTO) AX-9348 No.4656-1/4 FP105 Continued from preceding page. Electrical Characteristics at Ta=25˚C .Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 DC Current Gain hFE2 Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage fT VCB=–50V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–100mA VCE=–2V, IC=–1.5A 140 –0.1 µA –0.1 µA 560 40 VCE=–10V, IC=–50mA 150 MHz Cob VCE=–10V, f=1MHz 22 VCE(sat) VBE(sat) IC=–1.0A, IB=–50mA –0.3 –0.7 pF IC=–1.0A, IB=–50mA –0.9 –1.2 V V C-B Breakdown Voltage V(BR)CBO IC=–10µA, IE=0 –60 V C-E Breakdown Voltage V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IE=–10µA, IC=0 –50 V E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time –6 V ton tstg See specified Test Circuit 60 ns See specified Test Circuit 450 ns tf See specified Test Circuit 30 ns [SBD] Reverse Voltage VR Forward Voltage VF IR Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance C trr Rthj-a IR=200µA IF=500mA 50 V VR=25V VR=10V, f=1MHz V 50 µA 22 IF=IR=100mA, See specified Test Circuit Mounted on ceramic board (250mm2×0.8mm) 0.55 pF 10 120 ns ˚C/W Switching Time Test Circuit (TR) (SBD) No.4656-2/4 FP105 No.4656-3/4 FP105 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4656-4/4