Ordering number:EN4906 FX508 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications Package Dimensions · LCD backlight drive. unit:mm 2118 Features [FX508] · Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX508 houses two chips, each being equivalent to the 2SD1815, in one package. · Matched pair characteristics. 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Swithing Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 120 V Collector-to-Emitter Voltage VCBO VCEO 100 V Emitter-to-Base Voltage VEBO 6 V IC 3 A ICP 6 Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Mounted on ceramic board (750mm2×0.8mm) 1unit Total Dissipation Mounted on ceramic board (750mm2×0.8mm) Junction Temperature PT Tj Storage Temperature Tstg · Marking:508 A 600 mA 1.5 W 2 W 150 ˚C –55 to +150 ˚C Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1461 No.4906-1/4 FX508 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Unit max Collector Cutoff Current ICBO VCB=100V, IE=0 1 µA Emitter Cutoff Current IEBO hFE1 VEB=4V, IC=0 VCE=5V, IC=500mA 1 µA DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time hFE2 hFE(small/ large) fT Co b VCE(sat) VBE(sat) VCE=5V, IC=2A 40 VCE=5V, IC=500mA 0.8 tstg tf 400 VCE=10V, IC=500mA VCB=10V, f=1MHz 180 IC=1.5A, IB=150mA 150 400 0.9 1.2 IC=1.5A, IB=150mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO ton 140 IE=10µA, IC=0 MHz 25 pF mV V 120 V 100 V 6 V See sepcified Test Circuit 100 ns See sepcified Test Circuit 900 ns See sepcified Test Circuit 50 ns No.4906-2/4 FX508 No.4906-3/4 FX508 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4906-4/4