Ordering number :EN5962 NPN Triple Diffused Planar Silicon Transistor TS7994 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. unit:mm 2048B-TO3PBL [TS7994] ø3.3 5.0 1.0 26.0 6.0 20.0 2.0 2.0 3.4 20.7 0.6 1.2 5.45 2 3 1:Base 2:Collector 3:Emitter SANYO:TO-3PBL 2.8 1 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Symbol Conditions Ratings Unit 1600 V Colletctor-to-Emitter Voltage VCBO VCEO 800 V Emitter-to-Base Voltage VEBO 6 V IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC 3.5 W Junction Temperature Tj Storage Temperature Tstg Collector Current Tc=25˚ C 210 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol Conditions ICES VCE=1600V, RBE=0 VCEO(SUS) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf Ratings min typ 1.0 mA 1.0 mA 10 µA 800 VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=18A Unit max 15 V 30 4 7 IC=18A, IB=4.5A 5 IC=18A, IB=4.5A 1.5 V V IC=15A, IB1=2.5A, IB2=–6.25A 3.0 µs IC=15A, IB1=2.5A, IB2=–6.25A 0.2 µs SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42498TS (KOTO) TA-1622 No.5962-1/3 TS7994 Switching Time Test Circuit PW=20µs IB1 DC≤1% IB2 OUTPUT INPUT RB RL=13.3Ω VR + 50Ω + 100µF 470µF VBE=–2V VCC=200V I C - VCE 30 25 10.0A I C - VBE VCE =5V 8.0A 0.5A 5 IB =0 0 0 1 2 3 4 5 Collector-to-Emitter 6 7 Voltage, VCE 8 9 Collector-to-Emitter Saturation Voltage, VCE(sat) – V DC Current Gain, hFE 5 Ta=120˚C 25˚C –40˚C 10 7 5 3 2 2 3 5 7 1.0 Collector 3 5 7 10 Current, IC – A 2 3 7 5 2 1.0 7 tf 3 2 VCC =200V 0.1 IC / IB1=6 I / I =2.5 7 B2 B1 R load 5 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – A 1.0 1.2 3 2 1.0 7 5 3 2 0.1 7 5 Ta=–40˚C 25˚C 120˚C 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 SW Time - I B2 10 7 3 7 0.1 0.8 Collector Current, IC – A t stg 5 0.6 VCE(sat) - I C 10 7 IC / IB =5 5 0.01 0.1 5 SW Time - I C 10 Switching Time, SW Time – µs 2 Switching Time, SW Time – µs 1.0 0.1 0.4 Base-to-Emitter Voltage, VBE – V VCE =5V 2 0.2 – V 7 3 5 0 0 10 hFE - I C 100 10 –40 ˚C 1.0A 10 15 0˚C 2.0A 15 12 3.0A 25˚C 20 20 Ta = 6.0A 5.0A 4.0A Collerctor Current, IC – A Collerctor Current, IC – A 25 2 3 5 VCC =200V IC =15A IB1 =2.5A R load t stg 5 3 2 1.0 tf 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Base Current, IB2 – A No.5962-2/3 TS7994 Forward Bias A S O 30 10 W 3 s 7 5 3 2 Collector Current, IC – A =2 s 0µ PC D C op er 1.0 7 5 3 2 at 0.1 7 5 Tc=25˚C 3 1pulse 2 2 3 5 Reverse Bias A S O 100 7 5 1m 100 7 ICP 5 3 IC 2 10 s 10m Collector Current, IC – A , io n 2 10 7 5 3 2 1.0 7 5 L=100µH 3 IB2 =–5A 2 Tc=25˚C 7 10 2 3 5 7 100 2 3 0.1 5 5 7 1000 1pulse Collector-to-Emitter Voltage, VCE – V 5 7 2 100 3 5 140 160 210 Collector Dissipation, PC – W Collector Dissipation, PC – W 3 P C - Tc 240 3.5 3.0 No he at sin k 2.0 1.0 0 0 2 10 Collector-to-Emitter Voltage, VCE – V P C - Ta 4.0 7 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 200 160 120 80 40 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1998. Specifications and information herein are subject to change without notice. PS No.5962-3/3