PDP SPMTM FVP12030IM3LEG1 Energy Recovery Feature General Description • Use of high speed 300V IGBTs with parallel FRDs It is an advanced smart power module(SPMTM) that Fairchild has newly developed and designed to provide very compact and optimized performance for the energy recovery circuit of PDP driving system. It combines optimized circuit protection and drive matched to low-loss and high speed IGBTs. Under voltage lock-out protection function enhances the system reliability . The high speed built-in HVIC provides opto-couplerless single power supply IGBT gate driving capability that futher reduce the overall system size of PDP sustaining boards. • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of 1500Vrms/min. • Low leakge current due to using an insulated metal substrates Applications • Energy Recovery Part of a PDP (Plasma Display Panel) Package Outlines Figure 1. ©2006 Fairchild Semiconductor Corporation FVP12030IM3LEG1 Rev. A 1 www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery March 2007 FVP12030IM3LEG1 Energy Recovery Pin Configurations Top View Figure 2. 2 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Pin Descriptions Pin Number Pin Name 1 COML Pin Descriptions Low-side Signal Ground 2 VINL Low-side Signal Input 3 VCCL Low-side Supply Voltage for HVIC 4 VBL Low-side Floating Supply Voltage for Buffer IC and IGBT Driving 5 GL Low-side Gate 6 VSL Low-side Floating Ground for Buffer IC and IGBT Driving 7 IGND 8 COMH 9 VINH 10 VCCH 11 VBH IMS Ground High-side Signal Ground High-side Signal Input High-side Supply Voltage for HVICg High-side Floating Supply Voltage for Buffer IC and IGBT Driving 12 GH High-side Gate 13 VSH High-side Floating Ground for Buffer IC and IGBT Driving 14 CH High-side IGBT Collector 15 EH High-side IGBT Emitter 16 KH High-side Diode Cathode 17 AL Low-side Diode Anode 18 CL Low-side IGBT Collector 19 EL Low-side IGBT Emitter 3 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Internal Equivalent Circuit and Input/Output Pins (Bottom View) (13) VSH (12) GH (11) VBH (14) CH HVIC (10) VCCH (9) VINH (8) COMH VCC Buffer IC VB IN VCC OUT COM OUT IN VS COM COM (15) EH (7) IGND (16) KH (6) VSL (5) GL (4) VBL (17) AL HVIC (3) VCCL VCC (2) VINL (1) COML IN COM Buffer IC VCC VB (18) CL OUT IN OUT COM VS COM (19) EL Figure 3. 4 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com Symbol C = 25°C, Unless Otherwise Specified) Parameter Conditions VCC Control Supply Voltage VBS Control Bias Voltage Applied between VBL - VSL, VBH - VSH VIN Input Signal Voltage Applied between VINL-COML,VINH - COMH Symbol VCE VRRM VIN IC IF(AV) Applied between VCCL-COML, VCCH - COMH 20 V 20 V V Rating Units Between CL to EL, Between CH to EH VGH-EH=VGL-EL=0V , ICH=ICL=250µA 300 V Between KH to EH, Between CL to AL IAH=IAL=250µA 300 V Between CH to EH, Between CL to EL IAH=IAL=250µA 300 V -0.3 to VCC+0.3 V Conditions Peak Repetitive Reverse Voltage Units -0.3~17 Parameter Collector to Emitter Voltage Rating Input Signal Voltage VINL, VINH Collector Current Continuous Between CL to EL, Between CH to EH 120 A Average Rectified Forward Current Between EH to KH, Between AL to CL per diode 30 A Between EH to CH Between EL to CL 10 A ICP Pulsed Collector Current Between CL to EL, Between CH to EH (Note1) 300 A Between EH to KH, Between AL to CL(Note1) 300 A IFP Pulsed Diode Current Between EH to CH Between EL to CL per diode (Note1) 100 A Notes : 1. Pulse Width = 100µsec, Duty = 0.1; half sine wave *Icp limited by MAX Tj Symbol Parameter Conditions IGBT Dissipation Pd FRD Dissipation Rating Units Tc=25°C per IGBT 117 W Tc=100°C per IGBT 47 W Tc=25°C per diode 109 W Tc=100°C per diode 43 W Tj Operating Junction Temperture -20 ~ 150 °C TC Module Case Operation Temperature -20 ~ 125 °C -40 ~ 125 °C 1500 Vrms TSTG VISO Storage Temperature Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection Pins to IMS substrate Thermal Resistance Symbol Parameter Conditions Between CH to EH, Between CL to EL Per IGBT Rth(j-c) Junction to Case Thermal Resistance Max. Units - 1.07 °C/W Between EH to KH, Between AL to CL - 1.15 °C/W Between CH to EH, Between CL to EL Per Diode - 3.70 °C/W 5 FVP12030IM3LEG1 Rev. A Min. www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Absolute Maximum Ratings (T C Symbol = 25°C, Unless Otherwise Specified) Parameter Conditions Min. Typ. Max. Units IQCC Quiescent VCC Supply Current VCC = 15V VINL, VINH = 0V VCCL-COML, VCCH-COMH - - 100 µA IQBS Quiescent VBS Supply Current VBS = 15V VINL, VINH= 0V VBL- VSL, VBH- VSH - - 500 µA 10.1 11.3 12.5 V 10.5 11.7 12.9 V Supply Circuit Under VoltDetection Level age Protection UVBSD UVBSR Reset Level VIN(ON) ON Threshold Voltage VIN(OFF) OFF Threshold Voltage Symbol VCE(SAT) Parameter IGBT Collector-Emitter Saturation Voltage Diode Forward Voltage VF tdON tr Switching Times tdOFF Applied between VINL-COML, ,VINH - COMH tF Condition 3.0 - - V - - 0.8 V Min. Typ. Max. Units VCC = VBS = 15V VIN = 5V IC = 25A, TJ = 25°C - - 1.4 V IC = 120A, TJ = 25°C - 1.9 - V Between CL to AL Between KH to EH IF =30A, TJ = 25°C - - 1.4 V Between EH to CH Between EL to CL IF =10A, TJ = 25°C - - 1.7 V 230 VCE=200V, VCC= VBS=15V Ic = 20A VIN = 0V ↔ 5V , Inductive Load Tc = 25°C (Note2) ICES IGBT Collector-Emitter Leakage Current IR Diode Anode-Cathode Leakage Current VCE = 300V - Between CL to AL Between KH to EH VAnode-Cathode=300V Between EH to CH Between EL to CL VAnode-Cathode=300V - ns 55 ns 270 ns 48 ns - - 250 µA 250 µA 250 µA Notes : 2. tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4. VIN VIN VCE IC td(off) 90% of IC 90% of IC 10% of IC IC td(on) tf VCE 10% of Ic tr Figure 4. Switching Time Definition 6 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Electrical Characteristics (T FVP12030IM3LEG1 Energy Recovery Typical Performance Characteristics Figure 6. Typical Output Characteristics Figure 5. Typical Output Characteristics 180 180 o o T C = 125 C T C = 25 C 20V 15V 120 10V 12V 90 60 V G E =8V 15V 120 10V 90 V G E =8V 60 30 30 0 0 0 2 4 0 6 2 Collector-Em itter Voltage, V CE [V] 4 6 C ollector-E m itter V oltage, V C E [V ] Figure 7. Typical Forward Voltage Drop Figure 8. Typical Forward Voltage Drop 100 100 Between CL to AL Between KH to EH Between CL to EL Between CH to EH o FORWARD CURRENT, IF [A] TC = 100 C o Forward Current, IF [A] 12V 20V 150 Collector Current, IC [A] Collector Current, IC [A] 150 TC = 25 C 10 1 0.1 0.0 0.5 1.0 1.5 o TC = 125 C o TC = 25 C 10 o TC = 75 C 1 0.1 0.2 2.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE. VF [V] Forward Voltage, VF [V] Figure 9. FBSOA 50µs Collector Current, Ic [A] 100 Ic MAX (Pulsed) 100µs 1ms 10 1 0.1 0.01 0.1 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 7 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com Parameter Mounting Torque Device Flatness Conditions Mounting Screw: - M3 Limits Units Min. Typ. Max. 0.51 0.62 0.72 N•m 0 - +100 µm - 13.4 - g Recommended 0.62N•m Note Figure 5 Weight (+) (+) Figure 10. Flatness Measurement Position 8 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Mechanical Characteristics and Ratings FVP12030IM3LEG1 Energy Recovery Detailed Package Outline Drawings Figure 11. 9 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I24 10 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery tm