SM05 THRU SM36 TVS Diode Array PROTECTION PRODUCTS Description Features The SM series of transient voltage suppressors (TVS) are designed to protect components which are connected to data and transmission lines from voltage surges caused by ESD (electrostatic discharge), EFT (electrical fast transients), and lightning. u 300 watts peak pulse power (tp = 8/20µs) u Transient protection for data & power lines to TVS diodes are characterized by their high surge capability, low operating and clamping voltages, and fast response time. This makes them ideal for use as board level protection of sensitive semiconductor components. The dual-junction common-anode design allows the user to protect one bidirectional data line or two unidirectional lines. The low profile SOT23 package allows flexibility in the design of crowded circuit boards. u u u u IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (tp=5/50ns) IEC 61000-4-5 (Lightning) 12A (tp=1.2/50µs) Protects one bidirectional line or two unidirectional lines Working Voltages: 5V, 12V, 15V, 24 and 36V Low clamping voltage Solid-state silicon avalanche technology Mechanical Characteristics u u u u The SM series will meet the surge requirements of IEC 61000-4-2 (Formerly IEC 801-2), Level 4, Human Body Model for air and contact discharge. JEDEC SOT23 package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Applications u u u u u Circuit Diagram Cellular Handsets and Accessories Portable Electronics Industrial Controls Set-Top Box Servers, Notebook, and Desktop PC Schematic & PIN Configuration SOT23 (Top View) Revision 9/2000 1 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbo l Value Units Peak Pulse Pow er (tp = 8/20µ s) Pp k 300 Watts Th ermal Resistance, Junction to A mb ient qJA 556 °C/W Lead Sold ering Temp erature TL 260 (10 sec.) °C Op erating Temp erature TJ -55 to +125 °C TSTG -55 to +150 °C Storage Temp erature Electrical Characteristics SM05 Par ame te r Symbo l Co nd itio ns Minimum Typ ical Maximum Units 5 V Reverse Stand -Off Voltage V RWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 5V, T=25°C 20 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 9.8 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 17 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 350 pF Junction Cap acitance Cj Pin 1 to 3 and Pi n 2 t o 3 V R = 0V, f = 1MHz 400 pF Symbo l Co nd itio ns Maximum Units 12 V 6 V SM12 Par ame te r Minimum Typ ical Reverse Stand -Off Voltage V RWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 12V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 19 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 12 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 120 pF Junction Cap acitance Cj Pin 1 to 3 and Pi n 2 t o 3 V R = 0V, f = 1MHz 150 pF ã 2000 Semtech Corp. 2 13.3 V www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Electrical Characteristics (Continued) SM15 Par ame te r Symbo l Co nd itio ns Minimum Typ ical Maximum Units 15 V Reverse Stand -Off Voltage VRWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 15V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 24 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 10 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 75 pF Junction Cap acitance Cj Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz 100 pF Symbo l Co nd itio ns Maximum Units 24 V 16.7 V SM24 Par ame te r Minimum Typ ical Reverse Stand -Off Voltage V RWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 24V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 43 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 5 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 50 pF Junction Cap acitance Cj Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz 60 pF Symbo l Co nd itio ns Maximum Units 36 V 26.7 V SM36 Par ame te r Minimum Typ ical Reverse Stand -Off Voltage VRWM Reverse Breakd ow n Voltage V BR It = 1mA Reverse Leakage Current IR V RWM = 36V, T=25°C 1 µA Clamp ing Voltage VC IPP = 1A , tp = 8/20µ s 60 V Maximum Peak Pulse Current Ip p tp = 8/20µ s 4 A Junction Cap acitance Cj Pi n 1 t o 2 V R = 0V, f = 1MHz 40 pF Junction Cap acitance Cj Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz 45 pF ã 2000 Semtech Corp. 3 40 V www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 10 110 90 % of Rated Power or I PP Peak Pulse Power - PPP (kW) 100 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0 0.1 1 10 100 25 1000 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Duration - tp (µs) Pulse Waveform 110 Waveform Parameters: tr = 8µs td = 20µs 100 90 Percent of IPP 80 70 e 60 -t 50 40 td = IPP/2 30 20 10 0 0 5 10 15 20 25 30 Time (µs) ESD Pulse Waveform (Per IEC 61000-4-2) IEC 61000-4-2 Discharge Parameters Level ã 2000 Semtech Corp. 4 First Peak Current Peak Current at 30 ns Peak Current at 60 ns Test Test Voltage Voltage (Contact ( A ir Disch arge) Disch arge) (kV ) (kV ) (A) (A) (A) 1 7.5 4 8 2 2 2 15 8 4 4 4 3 22.5 12 6 6 8 4 30 16 8 8 15 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Applications Information Device Connection Options Device Schematic & Pin Configuration The SM series is designed to protect one bidirectional or two unidirectional data or I/O lines operating at 5 to 36 volts. Connection options are as follows: l l Bidirectional: Pin 1 is connected to the data line and pin 2 is connected to ground (Since the device is symmetrical, these connections may be reversed). For best results, the ground connection should be made directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance. Pin 3 is not connected. Unidirectional: Data lines are connected to pin 1 and pin 2. Pin 3 is connected to ground. For best results, this pin should be connected directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance. RS-232 Transceiver Protection Example Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of fast rise-time transients such as ESD. The following guidelines are recommended (Refer to application note SI99-01 for more detailed information): l l l l l l Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. ã 2000 Semtech Corp. 5 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Outline Drawing - SOT23 Land Pattern - SOT23 Note 1 : Grid placement courtyard is 8 x 8 elements (4mm x 4mm) in accordance with the international grid detailed in IEC Publication 97. ã 2000 Semtech Corp. 6 www.semtech.com SM05 THRU SM36 PROTECTION PRODUCTS Marking Codes Par t Numbe r Mar king Co d e SM05 M05 SM12 M12 SM15 M15 SM24 M24 SM36 M36 Ordering Information Par t Numbe r Wo r king Vo ltage Qty p e r R e e l R e e l Size SM05.TC 5V 3,000 7 Inch SM05.TG 5V 10,000 13 Inch SM12.TC 12V 3,000 7 Inch SM12.TG 12V 10,000 13 Inch SM15.TC 15V 3,000 7 Inch SM15.TG 15V 10,000 13 Inch SM24.TC 24V 3,000 7 Inch SM24.TG 24V 10,000 13 Inch SM36.TC 36V 3,000 7 Inch Contact Information Semtech Corporation Protection Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 FAX (805)498-3804 ã 2000 Semtech Corp. 7 www.semtech.com