BUT30V NPN TRANSISTOR POWER MODULE ■ ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: ■ MOTOR CONTROL ■ SMPS & UPS ■ WELDING EQUIPMENT Pin 4 not con nected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV Parameter Collector-Emitter Voltage (V BE = -5 V) IC I CM Uni t 200 V 125 V 7 V Collector Current 100 A Collector Peak Current (tp = 10 ms) 150 A V CEO(sus) Collector-Emitter Voltage (I B = 0) V EBO Value Emitter-Base Voltage (I C = 0) Base Current 20 A I BM Base Peak Current (t p = 10 ms) 30 A P t ot Total Dissipation at T c = 25 o C 250 IB T stg Tj V ISO July 1997 W -55 to 150 o Max. Operating Junction Temperature 150 o Insulation W ithstand Voltage (AC-RMS) 2500 St orage Temperature C C V 1/7 BUT30V THERMAL DATA R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heats ink With Conductive Grease Applied Max 0.5 o C/W Max 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter hFE∗ V BE(s at)∗ Max. Un it o 1 5 mA mA o 1 4 mA mA 1 mA Collector Cut-off Current (R BE = 5 Ω) V CE = V CEV V CE = V CEV T j = 100 C Collector Cut-off Current (V BE = -5V) V CE = V CEV V CE = V CEV T j = 100 C Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(SUS) * Collector-Emitter Sustaining Voltage V CE(sat )∗ Test Cond ition s DC Current G ain I C = 100 A V CE = 5 V IC IC IC IC = = = = 50 A 50 A 100 A 100 A IB IB IB IB = = = = 2.5 A 2.5 A 10 A 10 A IC IC IC IC = = = = 50 A 50 A 100 A 100 A IB IB IB IB = = = = 2.5 A 2.5 A 10 A 10 A Typ . 125 I C = 0.2 A L = 25 mH V c la mp = 125 V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. V 27 o T j = 100 C o T j = 100 C o T j = 100 C o T j = 100 C 0.45 0.55 0.7 0.9 0.9 1.2 0.9 1.5 V V V V 1.15 1.1 1.45 1.55 1.4 1.4 1.8 1.9 V V V V V CC = 300 V I B1 = 15 A RC = 0 tp = 3 µs o Tj = 100 C V CE (3 µs)•• Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 15 A RC = 1 Ω T j = 100 o C 2.7 3.5 V V CE (5 µs)•• Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 15 A RC = 1 Ω o T j = 100 C 2 2.5 V 1 0.1 0.2 2 0.2 0.35 µs µs µs di C /dt ts tf tc V CEW Rate of Rise of On-state Collector Storage Time Fall T ime Cross-over T ime I C = 100 A V CC = 90 V V BB = -5 V R BB = 0.47 Ω V c la mp = 125 V I B1 = 10 A L = 45 µH T j = 100 o C Maximum Collector Emitter Voltage Without Snubber I CW off = 150 A V BB = -5 V L = 30 µH T j = 125 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 IB1 = 10 A V CC = 90 V R BB = 0.5 Ω 270 125 350 A/µs V BUT30V Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUT30V Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 BUT30V Dc Current Gain Turn-on Switching Test Circuit (1) Fast electronic switch (2) Non-inductive load Turn-on Switching Waveforms Turn-off Switching Test Circuit (1) Fast electronic switch (3) Fast recovery rectifier Turn-off Switching Waveforms (2) Non-inductive load 5/7 BUT30V ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O H J C K L M 6/7 F E D N BUT30V Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7