STMICROELECTRONICS BUL213

BUL213
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125oC
APPLICATIONS
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ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL213 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
V CES
Collector-Emitter Voltage (V BE = 0)
1300
V CEO
Collector-Emitter Voltage (I B = 0)
600
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
3
A
Collector Peak Current (tp < 5 ms)
6
A
IC
I CM
Base Current
2
A
I BM
Base Peak Current (t p < 5 ms)
4
A
P t ot
Total Dissipation at T c = 25 o C
60
IB
T stg
Tj
April 1997
St orage Temperature
Max. Operating Junction Temperature
W
-65 to 150
o
C
150
o
C
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BUL213
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
2.08
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
100
500
µA
µA
250
µA
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1300 V
V CE = 1300 V
I CEO
Collector Cut-off
Current (IB = 0)
V CE = 600 V
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A IB = 0.1 A
I C = 1 A IB = 0.2 A
0.5
0.9
V
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 0.5 A IB = 0.1 A
I C = 1 A IB = 0.2 A
1.2
1.5
V
V
DC Current G ain
I C = 0.35 A
I C = 10 mA
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
I C = 1 A VCL = 400 V
I B1 = 0.2 A IB2 = -0.4 A
L = 200 µH
4
250
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
I C = 1 A VCL = 400 V
I B1 = 0.2 A IB2 = -0.4 A
L = 200 µH T j = 125 oC
5.2
380
V CEO(sus)
V EBO
h FE∗
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
Tj = 125 o C
L = 25 mH
V CE = 3 V
V CE = 5 V
600
V
9
V
16
12
36
6
420
µs
ns
µs
ns
BUL213
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BUL213
Reverse Biased SOA
IRBSOA and Inductive Load Switching Test
Circuits
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
4/6
BUL213
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
0.551
L2
16.4
L4
0.645
13.0
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
5/6
BUL213
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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