BUF410 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES ■ MOTOR CONTROL DESCRIPTION The BUF410 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Un it V CEV Collector-Emitter Voltage (VBE = -1.5 V) 850 V V CEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 15 A Collector Peak Current (tp < 5 ms) 30 A 3 A IC I CM IB Base Current I BM Base Peak Current (tp < 5 ms) 4.5 A P tot T otal Dissipation at Tc = 25 o C 125 W T s tg Storage Temperature -65 to 150 o C Tj Max O peration Junction Temperature 150 o C Tj Max. Operating Junction T emperature 150 o C July 1997 1/6 BUF410 THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max o 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER Parameter Min. Collector Cut-off Current (R BE = 100 Ω) V CE = V CEV V CE = V CEV I CEV Collector Cut-off Current (IB = 0) V CE = V CEV V BE = -1.5 V o V CE = V CEV V BE = -1.5 V Tc =100 C I EBO Emitter Cut-off Current (I C = 0) V BE = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat )∗ V BE(s at)∗ di c /dt V CE (3µs) V CE (5µs) o I C = 200 mA L = 25 mH Emitter Base Voltage (I C = 0) I E = 50 mA Collector-Emitter Saturation Voltage IC IC IC IC =5 A =5 A =10 A =10 A IB IB IB IB = = = = 0.5 A 0.5 A 2 A 2 A IC IC IC IC =5 A =5 A =10 A =10 A IB IB IB IB = = = = 0.5 A 0.5 A 2 A 2 A Base-Emitter Saturation Voltage Rate of rise on-state Collector Current Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage Max. Un it 0.2 1 mA mA 0.2 1 mA mA 1 mA 450 V 7 V 0.8 o 2.8 T c =100 C 0.5 o T c =100 C 2 0.9 o 1.5 T c =100 C 1.1 o T c =100 C V CC = 300 V R C = 0 I B1 = 0.75 A I B1 = 0.75 A I B1 = 3 A tp = 3 µs o Tj =25 C o Tj =100 C o T j =100 C V CC = 300 V I B1 = 0.75 A I B1 = 0.75 A R C = 60 Ω o Tj =25 C Tj =100 o C 1.5 60 2.1 R C = 60 Ω o T j =25 C o T j =100 C 1.1 0.8 0.05 0.08 IC = 5 A V BB = - 5 V V c la mp = 400 V L = 0.5 mH V CC = 50 V R BB = 1.2 Ω IB1 = 0.5 A ts tf tc Storage Time Fall T ime Cross Over T ime IC = 5 A V BB = - 5 V V c la mp = 400 V L = 0.5 mH V CC = 50 V R BB = 1.2 Ω IB1 = 0.5 A T j =100 oC Maximum Collector Emitter Voltage without Snubber IC = 5 A V BB = - 5 V V c la mp = 400 V L = 0.5 mH VCC = 50 V R BB = 1.2 Ω IB1 = 0.5 A o T j =125 C Storage Time Fall T ime Cross Over T ime IC = 5 A V BB = 0 V c la mp = 400 V L = 0.5 mH V CC = 50 V R BB = 0.3 Ω IB1 = 0.5 A V V V V 8 V V 4 V V µs µs µs 1.8 0.1 0.18 500 V V V V A/µs A/µs A/µs 45 100 V CC = 300 V I B1 = 0.75 A I B1 = 0.75 A Storage Time Fall T ime Cross Over T ime ts tf tc Typ . T c = 100 C ts tf tc V CEW 2/6 Test Cond ition s µs µs µs V 1.5 0.04 0.07 µs µs µs BUF410 ELECTRICAL CHARACTERISTICS (continued) Symb ol ts tf tc Parameter Test Cond ition s Storage Time Fall T ime Cross Over T ime IC = 5 A V BB = 0 V c la mp = 400 V L = 0.5 mH V CC = 50 V R BB = 0.3 Ω IB1 = 0.5 A o T j =100 C Maximum Collector Emitter Voltage without Snubber IC = 5 A V BB = 0 V c la mp = 400 V L = 0.5 mH V CC = 50 V R BB = 0.3 Ω IB1 = 0.5 A T j =125 oC ts tf tc Storage Time Fall T ime Cross Over T ime I C = 10 A V BB = -5 V V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB =1.2 Ω IB1 = 2 A ts tf tc Storage Time Fall T ime Cross Over T ime I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB =1.2 Ω IB1 = 2 A o Tj =100 C Maximum Collector Emitter Voltage without Snubber I CW off = 15 A V BB = - 5 V L = 0.17 mH o T j =125 C V CC = 50 V R BB = 1.2 Ω IB1 = 3 A V CEW V CEW Turn-on Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Min. Typ . Max. Un it 3 0.15 0.25 µs µs µs 500 V µs µs µs 1.9 0.06 0.12 3.2 0.12 0.3 400 µs µs µs V Turn-off Switching Test Circuit 1) Fast electronic switch 3) Fast recovery rectifier 2) Non-inductive Resistor Turn-on SwitchingTest Waveforms. 3/6 BUF410 Turn-off SwitchingTest Waveforms (inductive load). Forward Biased Safe Operating Areas. Reverse Biased Safe Operating Area Storage Time Versus Pulse Time. 4/6 BUF410 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 5/6 BUF410 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6