MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO TIP112 AND TIP117 APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 DPAK TO-252 (Suffix ”T4”) DESCRIPTION The MJD112 and MJD117 form complementary PNP - NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM R1(typ) = 7KΩ R2(typ) = 200Ω ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCBO Collector-Emitter Voltage (IE = 0) Parameter 100 V VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 2 A ICM Collector Peak Current (t p < 5 ms) 4 A IB Base Current Pt ot Tot al Dissipation at T c = 25 o C T stg Storage Temperature Tj Max. Ope rating Junction Temperature 0.05 A 20 W -65 to 150 o C 150 o C For PNP type voltage and current values are negative. September 1997 1/6 MJD112/MJD117 THERMAL DATA R thj-ca se Rt hj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 6.25 100 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Max. Unit ICBO Collecto r Cut-of f Current (I E = 0) Parameter VCB = 100 V VCB = 80 V Test Conditions Min. Typ. 0.02 0.01 mA mA ICEO Collecto r Cut-of f Current (I B = 0) VCE = 50 V 0.02 mA ICEX Collecto r Cut-of f Current VCB = 80 V VBE = -1.5V VCB = 80 V VBE = -1.5V T c = 125 o C 0.01 0. 5 mA mA I EBO Emitter Cut-off Current VEB = 5 V (I C = 0) 2 mA VCEO(sus) Collecto r-Emitter Sustaining Voltage I C = 30 mA V CE(sat )∗ Collecto r-Emitter Saturation Voltage IC = 2 A IC = 4 A IB = 8 mA IB = 40 mA 2 3 V V VBE( sat) ∗ Collecto r-Base Saturation Voltage IC = 4 A IB = 40 mA 4 V V BE(on) ∗ Base-Emitter Volta ge IC = 2 A VCE = 3 V 2. 8 V hFE ∗ DC Current Gain I C = 0.5 A IC = 2 A IC = 4 A 100 VCE = 3 V VCE = 3 V VCE = 3 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % Safe Operating Areas 2/6 Derating Curve 500 100 0 200 V 120 00 MJD112/MJD117 DC Current Gain (NPN type) DC Current Gain (NPN type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/6 MJD112/MJD117 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types) 4/6 MJD112/MJD117 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 5/6 MJD112/MJD117 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 6/6