ST2001HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOR TV AND MONITOR 3 2 1 ISOWATT218 DESCRIPTION The ST2001HI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (I E = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 600 V V EBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 10 A Collector Peak Current (tp < 5 ms) 20 A 7 A IC I CM IB Parameter Base Current P t ot Total Dissipation at Tc = 25 o C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1999 55 W -65 to 150 o C 150 o C 1/6 ST2001HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.3 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 7 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ . o T j = 125 C I C = 100 mA L = 25 mH Max. Un it 1 2 mA mA 1 mA 600 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 5 A IB = 1.25 A 1.5 V V BE(s at)∗ Base-Emitt er Saturation Voltage IC = 5 A IB = 1.25 A 1.2 V DC Current Gain IC = 6 A V CE = 5 V INDUCTIVE LO AD Storage Time Fall Time IC = 5 A L B = 1 µH f = 64 KHz IBon (END) =1 A V BB = -2.5 V h F E∗ ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/6 Thermal Impedance 5 10 2.5 0.3 3.5 0.45 µs µs ST2001HI Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses Switching Time Inductive Load 3/6 ST2001HI RBSOA Inductive Load Switching Test Circuits. 4/6 ST2001HI ISOWATT218 NARROW LEADS MECHANICAL DATA DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 mm TYP. 10.80 15.80 MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 0.425 0.622 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/B 5/6 ST2001HI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6