STMICROELECTRONICS THD277HI

THD277HI

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)).
APPLICATIONS
■
HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
■
SWITCH MODE POWER SUPPLIES
DESCRIPTION
This device is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhance switching speeds.
The THD series are designed for use in
horizontal deflection circuits in televisions and
monitors.
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CBO
Collector-Base Voltage (IE = 0)
1500
V
V CEO
Collector-Emitter Voltage (I B = 0)
700
V
V EBO
Emitter-Base Voltage (I C = 0)
10
V
8
A
IC
I CM
IB
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
I BM
Base Peak Current (t p < 5 ms)
P t ot
Total Dissipation at T c = 25 C
T stg
St orage Temperature
Tj
o
Max. Operating Junction Temperature
December 1999
15
A
5
A
8
A
50
W
-65 to 150
o
C
150
o
C
1/5
THD277HI
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
2.5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V EBO
Emitter-Base Voltage
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ .
Max.
Un it
200
µA
50
µA
I E = 10 mA
10
V
I C = 100 mA
700
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 4 A
IB = 1 A
0.9
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
IC = 4 A
IB = 1 A
1.3
V
DC Current G ain
IC = 4 A
IC = 4 A
h FE∗
VCE = 5 V
VCE = 5 V
ts
tf
RESISTIVE LO AD
Storage Time
Fall T ime
V CC = 400 V
I B1 = 1 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 4 A
I B1 = 1 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 4 A
I B1 = 1 A
o
T j = 100 C
IC = 4 A
I B2 = -2 A
f = 15625 Hz
IB2 = -2 A
π
6
V c eflybac k = 1050 sin
10  t
10


f = 31250 Hz
IB2 = -2 A
π

V c eflybac k = 1050 sin
106 t
10


V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/5
Thermal Impedance
6
4
13
2.1
140
3.2
210
µs
ns
4.3
370
µs
ns
4.3
330
µs
ns
THD277HI
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load
Reverse Biased SOA
3/5
THD277HI
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
3.7
0.138
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
4/5
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.146
P025C/A
THD277HI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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