ETC BULB39DT4

BULB39D

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
■
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
HIGH RUGGEDNESS
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL (Suffix
”T4”)
3
1
APPLICATIONS
■
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
■
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BULB39D is manufactured using high
voltage Multi Epitaxial Planar technology to
enhance switching speeds while maintaining wide
RBSOA.
The BUL series is designed for use in electronics
transformers for halogen lamps.
D2PAK
(TO-263)
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
850
V
V CEO
Collector-Emitter Voltage (IB = 0)
450
V
V EBO
Emitter-Base Voltage (IC = 0)
9
V
Collector Current
4
A
Collector Peak Current (tp <5 ms)
8
A
IC
I CM
Base Current
2
A
I BM
Base Peak Current (tp <5 ms)
4
A
P t ot
Total Dissipation at T c = 25 o C
70
IB
T stg
Tj
August 2001
Storage Temperature
Max. O perating Junction Temperature
W
-65 to 150
o
C
150
o
C
1/6
BULB39D
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
1.78
70
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
I EBO
Parameter
Test Cond ition s
Collector Cut-off
Current (V BE = 0)
V CE = 850 V
V CE = 850 V
Emitter Cut-off Current
(I C = 0)
V EB = 9 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
I C = 100 mA
Min.
T j = 125 o C
L = 25 mH
Collector-Emitter
Saturation Voltage
IC = 1 A
I C = 2.5 A
I B = 0.2 A
IB = 0.5 A
V BE(s at)∗
Base-Emitter
Saturation Voltage
IC = 1 A
I C = 2.5 A
I B = 0.2 A
IB = 0.5 A
h FE∗
DC Current G ain
IC = 5 A
I C = 10 mA
V CE = 10 V
V CE = 5 V
4
10
V CEW
Maximum Collector
Emitter Voltage
Without Snubber
IC = 6 A
V BB = -2.5 V
t p = 10 µs
R BB = 0 Ω
L = 50µH
450
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 2.5 A
V BE(of f) = -5 V
V CL = 300 V
IB( on) = 0.5 A
R BB = 0 Ω
L = 1 mH
Vf
Diode F orward Voltage
IC = 2 A
2/6
Max.
Un it
100
500
µA
µA
100
µA
450
V CE(sat )∗
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ .
V
0.13
0.5
1.1
V
V
1.1
1.3
V
V
V
0.7
50
1.5
100
µs
ns
1.5
V
BULB39D
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BULB39D
Inductive Fall Time
Reverse Biased SOA
4/6
Inductive Storage Time
BULB39D
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.036
B2
1.14
1.70
0.044
0.067
C
0.45
0.60
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8.00
10.00
E1
0.368
0.315
10.40
0.393
8.50
0.409
0.334
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.40
1.75
0.055
0.068
M
2.40
3.2
0.094
0.126
8o
0o
R
V2
0.40
0o
- Weight : 1.38 g (typ.)
- The planaty of the slug must be within 30 µm
0.016
8o
P011P6/G
5/6
BULB39D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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