STMICROELECTRONICS STD13003

STD13003
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
■
■
REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS:
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
3
2
1
1
IPAK
TO-251
(Suffix "-1")
3
DPAK
TO-252
(Suffix "T4")
■
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CES
V CEO
V EBO
IC
I CM
IB
I BM
P tot
T stg
Tj
Parameter
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage
o
(I C = 0, I B = 0.75 A, tp < 10µs, T j < 150 C)
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
Base Peak Current (t p < 5 ms)
Total Dissipation at T c = 25 o C
Storage Temperature
Max. Operating Junction Temperature
September 2001
Value
700
400
BV EBO
Unit
V
V
V
1.5
3
0.75
1.5
20
-65 to 150
150
A
A
A
A
W
o
C
o
C
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STD13003
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
6.25
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CEV
BV EBO
Parameter
Test Conditions
Min.
Collector Cut-off
Current (V BE = -1.5V)
V CE = 700V
V CE = 700V
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 mA
9
I C = 10 mA
L = 25 mH
400
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Typ.
T j = 125 o C
Max.
Unit
1
5
mA
mA
18
V
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
I C = 1.5 A
I B = 0.1 A
I B = 0.25 A
I B = 0.5 A
0.5
1
3
V
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
I B = 0.1 A
I B = 0.25 A
1
1.2
V
V
DC Current Gain
I C = 0.5 A
Group A
Group B
IC = 1 A
V CE = 2 V
IC = 1 A
I B1 = 0.2 A
T p = 25 µs
V CC = 125 V
I B2 = -0.2 A
IC = 1 A
V BE = -5 V
V clamp = 300 V
I B1 = 0.2 A
L = 50 mH
h FE ∗
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
ts
INDUCTIVE LOAD
Storage Time
V CE = 2 V
20
35
25
8
15
5
1
4
0.7
0.8
µs
µs
µs
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/8
STD13003
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/8
STD13003
Inductive Fall Time
Reverse Biased SOA
4/8
Inductive Storage Time
STD13003
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
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STD13003
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
B5
B6
C
0.033
0.30
0.012
0.95
0.45
0.60
0.037
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
L2
V1
0.80
10
o
1.00
0.047
0.031
10
0.039
o
P032N_E
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STD13003
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
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STD13003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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