STD17NF03L STD17NF03L-1 N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET™II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS(on) ID 30 V 30 V < 0.05 Ω < 0.05 Ω 17 A 17 A STD17NF03L STD17NF03L-1 ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.038Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100°C APPLICATION ORIENTED CHARACTERIZATION 100% AVALANCHE TESTED DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 3 2 1 DPAK 1 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ AUTOMOTIVE ENVIRONMENT Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STD17NF03LT4 D17NF03L@ DPAK TAPE & REEL STD17NF03L-1 D17NF03L@ IPAK TUBE Rev. 3 October 2004 NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532 1/11 STD17NF03L - STD17NF03L-1 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±16 V ID Drain Current (continuous) at TC = 25°C 17 A ID Drain Current (continuous) at TC = 100°C 12 A Drain Current (pulsed) 68 A IDM () PTOT Total Dissipation at TC = 25°C 30 W Derating Factor 0.2 W/°C 7 V/ns dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Tj Storage Temperature Operating Junction Temperature 200 mJ –55 to 175 °C 175 °C (1) ISD ≤ 17A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.. (2) Starting Tj=25°C, ID=8.5A, VDD=15V () Pulse width limited by safe operating area Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 5.0 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 IDSS VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 30 Unit V 1 VGS = ±16V µA 10 µA ±100 nA Table 6: On Symbol 2/11 Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 8.5 A VGS = 5 V, ID = 8.5 A Min. Typ. Max. Unit 1 1.5 2.2 V 0.038 0.045 0.05 0.06 Ω Ω STD17NF03L - STD17NF03L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID =8.5A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 12 S 320 155 28 pF pF pF Table 8: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15V, ID = 8.5A RG = 4.7Ω VGS = 5V (see Figure 16) 11 100 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24V, ID = 17A, VGS = 5V 4.8 2.25 1.7 6.5 nC nC nC Typ. Max. Unit ns ns Table 9: Switching Off Symbol Parameter Test Conditions Min. td(off) tf Turn-off-Delay Time Fall Time VDD = 15V, ID = 8.5A, RG=4.7Ω, VGS = 5V (see Figure 16) 25 22 ns ns tr(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =24V, ID =17A RG=4.7Ω, VGS = 5V (see Figure 17) 22 55 75 ns ns ns Table 10: Source Drain Diode Symbol ISD Parameter Test Conditions Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 17A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) IRRM Typ. Source-drain Current ISDM (2) trr Qrr Min. 28 18 1.3 Max. Unit 22 A 88 A 1.5 V ns nC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/11 STD17NF03L - STD17NF03L-1 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/11 STD17NF03L - STD17NF03L-1 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/11 STD17NF03L - STD17NF03L-1 Figure 15: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Wafeform Figure 16: Switching Times Test Circuit For Resistive Load Figure 19: Gate Charge Test Circuit Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/11 STD17NF03L - STD17NF03L-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 0.8 0.398 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 7/11 STD17NF03L - STD17NF03L-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 8/11 STD17NF03L - STD17NF03L-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 MIN. 12.1 0.476 1.6 0.059 0.063 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 3.9 4.1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.065 0.073 P0 15.7 MAX. 330 0.059 P1 R MIN. MAX. D1 W inch MAX. 1.574 16.3 0.618 0.641 * on sales type 9/11 STD17NF03L - STD17NF03L-1 Table 11: Revision History Date Revision 08-June-2004 19-Oct-2004 2 3 10/11 Description of Changes New Stylesheet. Datasheet according to PCN DSG-TRA/04/532 Modified value in title STD17NF03L - STD17NF03L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11