STMICROELECTRONICS STD3NC60

STD3NC60
STD3NC60-1
N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK
PowerMesh™II MOSFET
TYPE
STD3NC60
STD3NC60-1
■
■
■
■
■
■
VDSS
RDS(on)
ID
600V
600V
< 2.2Ω
< 2.2Ω
3.2A
3.2A
TYPICAL RDS(on) = 1.8Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (SMD PACKAGE)
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
3
3
2
1
1
DPAK
No Suffix
IPAK
(Suffix”-1”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
V
Gate- source Voltage
±30
ID
Drain Current (continuos) at TC = 25°C
3.2
A
ID
Drain Current (continuos) at TC = 100°C
2
A
12.8
A
Total Dissipation at TC = 25°C
50
W
Derating Factor
0.4
W/°C
Peak Diode Recovery voltage slope
3.5
V/ns
–65 to 150
°C
150
°C
IDM ()
PTOT
dv/dt(1)
Tstg
Tj
Drain Current (pulsed)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤3.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
August 2002
1/10
STD3NC60 - STD3NC60-1
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
2.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Maximum Lead Temperature For Soldering Purpose
275
°C
Tl
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
3.2
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
270
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
Min.
Typ.
Max.
600
Unit
V
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
Min.
Typ.
Max.
Unit
2
3
4
V
1.8
2.2
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
2/10
Parameter
Forward Transconductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
3.7
S
Ciss
Input Capacitance
475
pF
Coss
Output Capacitance
72
pF
Crss
Reverse Transfer
Capacitance
10
pF
STD3NC60 - STD3NC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 300V, ID = 2A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 4 A,
VGS = 10V
Typ.
Max.
Unit
14
ns
14
ns
16.5
23.1
nC
2.5
nC
9
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 480V, ID = 4 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
15
Unit
ns
19
ns
24
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 3.2A, VGS = 0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 4A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
IRRM
Reverse Recovery Current
Max.
Unit
3.2
A
12.8
A
1.6
V
600
ns
2.7
µC
9
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/10
STD3NC60 - STD3NC60-1
Output Characteristics
Tranfer Characteristics
Tranconductance
Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STD3NC60 - STD3NC60-1
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
STD3NC60 - STD3NC60-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD3NC60 - STD3NC60-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
2.4
0.086
TYP.
MAX.
A
2.2
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.094
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
7/10
STD3NC60 - STD3NC60-1
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
8/10
STD3NC60 - STD3NC60-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
12.1
0.476
B1
1.6
MIN.
D
1.5
1.5
E
1.65
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
B
1.5
C
12.8
D
20.2
G
16.4
N
50
2.55
2.75
0.100 0.108
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
16.3
1.574
0.618
40
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059 0.063
K0
15.7
MAX.
12.992
0.059
P0
R
MIN.
MAX.
D1
W
MAX.
330
T
TAPE MECHANICAL DATA
inch
0.641
* on sales type
9/10
STD3NC60 - STD3NC60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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