STD12NF06L N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET TYPE STD12NF06L ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 60 V < 0.1 Ω 12 A TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 3 1 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 60 V 60 V ± 16 V ID Drain Current (continuous) at TC = 25°C 12 A ID Drain Current (continuous) at TC = 100°C 8.5 A IDM(•) Ptot Drain Current (pulsed) 48 A Total Dissipation at TC = 25°C 30 W Derating Factor 0.2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns EAS (2) Single Pulse Avalanche Energy 100 mJ -55 to 175 °C Tstg Tj Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. June 2003 . Value (1) ISD ≤12A, di/dt ≤200A/µs, VDD=40V, Tj ≤ TJMAX (2) Starting T j = 25 oC, IAR = 6A, VDD= 30V 1/10 STD12NF06L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 5 100 275 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 100°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit 2 V 0.08 0.10 0.10 0.12 Ω Ω Typ. Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 6 A ID = 6 A Min. Typ. 1 DYNAMIC Symbol 2/10 Parameter gfs (*) Forward Transconductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =25 V ID = 6 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 7 S 350 75 30 pF pF pF STD12NF06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 6 A VDD = 30 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) 10 35 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48 V ID = 12 A VGS= 5V 7.5 2.5 3.0 10 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 6 A VDD = 30 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) 20 13 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 12 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 12 A VDD = 16 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 50 67 2.5 Max. Unit 12 48 A A 1.5 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STD12NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD12NF06L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/10 STD12NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD12NF06L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 7/10 STD12NF06L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 8/10 STD12NF06L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. inch MAX. MIN. B 1.5 C 12.8 D 20.2 G 16.4 N 50 A0 6.8 7 0.267 0.275 10.4 10.6 0.409 0.417 12.1 D 1.5 D1 1.5 E 1.65 1.6 MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 1000 1000 MAX. B0 B1 MIN. 330 T TAPE MECHANICAL DATA MAX. inch 0.476 0.059 0.063 0.059 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 P2 1.9 2.1 0.075 0.082 R W 40 15.7 16.3 1.574 0.618 0.319 0.641 *on sales type 9/10 STD12NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10