STGY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH™ IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGY40NC60VD 600 V < 2.5 V 50 A ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. 2 3 1 Max247 Weight: 4.96gr ± 0.01 Max Clip Pressure: 150 N/mm2 Figure 2: Internal Schematic Diagram APPLICATIONS HIGH FREQUENCY INVERTERS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ UPS ■ MOTOR DRIVERS ■ Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGY40NC60VD GY40NC60VD Max247 TUBE Rev.8 July 2004 1/11 STGY40NC60VD Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C (#) 80 A IC Collector Current (continuous) at 100°C (#) 50 A Collector Current (pulsed) 200 A ICM (1) IF PTOT Tstg Tj Diode RMS Forward Current at TC =25°C 30 A Total Dissipation at TC = 25°C 260 W Derating Factor 2.08 W/°C – 55 to 150 °C Storage Temperature Operating Junction Temperature (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case (IGBT) -- -- 0.48 °C/W Rthj-case Thermal Resistance Junction-case (Diode) -- -- 1.5 °C/W Rthj-amb Thermal Resistance Junction-ambient -- -- 50 °C/W TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol Parameter VBR(CES) Collectro-Emitter Breakdown Voltage IC = 1 mA, VGE = 0 Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating Tc=25°C Tc=125°C Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V , VCE = 0 ICES IGES Test Conditions Min. Typ. Max. 600 Unit V 10 1 µA mA ± 100 nA Max. Unit 5.75 V 2.5 V V Table 6: On Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage VCE= VGE, IC= 250 µA Collector-Emitter Saturation Voltage VGE= 15 V, IC= 40A, Tj= 25°C VGE= 15 V, IC= 40A, Tj= 125°C (#) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( M AX ) C C 2/11 Test Conditions Min. Typ. 3.75 1.9 1.7 STGY40NC60VD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions gfs(1) Forward Transconductance VCE = 15 V, IC= 20 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390 V, IC = 40 A, VGE = 15V, (see Figure 21) ICL Turn-Off SOA Minimum Current Vclamp = 480 V , Tj = 150°C RG = 100 Ω, VGE= 15V Min. Typ. Max. Unit 20 S 4550 350 105 pF pF pF 214 30 96 nC nC nC 200 A Table 8: Switching On Symbol Parameter Test Conditions td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 40 A RG= 3.3Ω, VGE= 15V, Tj= 25°C (see Figure 19) td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 40 A RG= 3.3Ω, VGE= 15V, Tj= 125°C (see Figure 19) Min. Typ. 43 17 2060 330 Max. Unit 450 ns ns A/µs µJ 42 19 1900 640 ns ns A/µs µJ 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) Table 9: Switching Off Symbol Parameter tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf Eoff (3) Ets tr(Voff) td(off) tf Eoff (3) Ets Current Fall Time Test Conditions Vcc = 390 V, IC = 40 A, RGE = 3.3 Ω , VGE = 15 V TJ = 25 °C (see Figure 19) Min. Typ. Max. Unit 25 ns 140 ns 45 ns Turn-off Switching Loss 720 970 µJ Total Switching Loss 1050 1420 µJ Off Voltage Rise Time Turn-off Delay Time Vcc = 390 V, IC = 40 A, RGE = 3.3 Ω , VGE = 15 V Tj = 125 °C (see Figure 19) 60 ns 170 ns 77 ns Turn-off Switching Loss 1400 µJ Total Switching Loss 2040 µJ Current Fall Time (3)Turn-off losses include also the tail of the collector current. 3/11 STGY40NC60VD Table 10: Collector-Emitter Diode Symbol Test Conditions Min. Typ. Max. Unit 1.5 1 2.2 V V Forward On-Voltage If = 20 A If = 20 A, Tj = 125 °C trr ta Qrr Irrm S Reverse Recovery Time If = 20 A ,VR = 40 V, Tj = 25°C, di/dt = 100 A/µs (see Figure 22) 44 32 66 3 0.375 ns ns nC A trr ta Qrr Irrm S Reverse Recovery Time If = 20 A ,VR = 40 V, Tj =125°C, di/dt = 100 A/µs (see Figure 22) 88 56 237 5.4 0.57 ns ns nC A Vf 4/11 Parameter Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode STGY40NC60VD Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 5/11 STGY40NC60VD Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Total Switching Losses vs Temperature Figure 11: Total Switching Losses vs Gate Resistance Figure 14: Total Switching Losses vs Collector Current 6/11 STGY40NC60VD Figure 15: Thermal Impedance Figure 18: Ic vs Frequency Figure 16: Turn-Off SOA Figure 17: Emitter-Collector Diode Characteristics For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C 2) The conduction losses are: PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125°C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). 7/11 STGY40NC60VD Figure 19: Test Circuit for Inductive Load Switching Figure 21: Gate Charge Test Circuit Figure 20: Switching Waveforms Figure 22: Diode Recovery Times Waveform 8/11 STGY40NC60VD Table 11: Revision History Date Revision 07-June-2004 7 Description of Changes Stylesheet update. Added Max Values see Table 8 and 9 14-Jul-2004 8 Added Figure 22 Figure 19 updated, some datas have been modified 9/11 STGY40NC60VD Max247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 MIN. TYP. MAX. P025Q 10/11 STGY40NC60VD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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