STN2NF06L N-CHANNEL 60V - 0.1 Ω - 2A SOT-223 STripFET™ II POWER MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STN2NF06L 60 V <0.12 Ω 2A TYPICAL RDS(on) = 0.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES, etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V ± 16 V ID Drain Current (continuous) at TC = 25°C 2 A ID Drain Current (continuous) at TC = 100°C IDM(•) Gate- source Voltage 1.2 A Drain Current (pulsed) 8 A Total Dissipation at TC = 25°C 3 W Derating Factor 8 W/°C dv/dt (2) Peak Diode Recovery voltage slope 6 V/ns EAS (3) Single Pulse Avalanche Energy 200 mJ Ptot(1) Tstg Tj Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (1) Related to Rthj -l November 2002 . -55 to 150 °C °C (2) ISD ≤2A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX (3) Starting T j = 25 oC, ID = 2A, VDD = 30V 1/8 STN2NF06L THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB(1 inch2 copper board) Thermal Resistance Junction-PCB (min. footprint) Maximum Lead Temperature For Soldering Purpose 50 90 260 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 250 µA Min. Typ. 1 ID = 1 A ID = 1 A V 0.1 0.12 0.12 0.14 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 1 A Min. 3 S 360 55 25 pF pF pF STN2NF06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit Turn-on Time Rise Time ID = 1 A VDD = 30 V VGS = 4.5 V RG = 4.7 Ω (Resistive Load, Figure 3) 10 20 Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 2 A VGS= 5 V 5.6 1.2 2.6 7.6 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 1 A VDD = 30 V VGS = 4.5 V RG = 4.7Ω, (Resistive Load, Figure 3) 17 6 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 2 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A di/dt = 100A/µs Tj = 150°C VDD = 20 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 28 31 2.2 Max. Unit 2 8 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance Junction-lead 3/8 STN2NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STN2NF06L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STN2NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STN2NF06L SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 7/8 STN2NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8