STP55NF03L N-CHANNEL 30V - 0.01Ω - 55A TO-220 STripFET POWER MOSFET TYPE STP55NF03L ■ ■ ■ ■ VDSS RDS(on) ID 30 V <0.013 Ω 55 A TYPICAL RDS(on) = 0.01 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ LOW VOLTAGE DC-DC CONVERTERS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ HIGH EFFICIENCY SWITCHING CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V V Gate- source Voltage ±15 ID Drain Current (continuos) at TC = 25°C 55 A ID Drain Current (continuos) at TC = 100°C 39 A VGS IDM(•) Drain Current (pulsed) 220 A Ptot Total Dissipation at TC = 25°C Derating Factor 80 W Tstg Storage Temperature Tj Max. Operating Junction Temperature 0.53 W/°C –60 to 175 °C 175 °C ( •)Pulse width limited by safe operating area. February 2001 1/8 STP55NF03L THERMAL DATA R thj-case R thj-amb Rthc-sink Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ °C/W °C/W °C/W °C 1.875 62.5 0.5 300 ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ±15 V V(BR)DSS VGS = 0 Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 27.5 A ID = 27.5 A On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V ID(on) Min. Typ. 1 V 0.01 0.013 0.013 0.020 55 Ω Ω A DYNAMIC Symbol gfs (*) C iss Coss Crss 2/8 Parameter Test Conditions Forward Transconductance VDS>ID(on) x RDS(on)max ID=27.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitances VDS = 25V f = 1 MHz VGS = 0 Min. Typ. Max. Unit 30 S 1265 435 115 pF pF pF STP55NF03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V I D = 27.5 A VGS = 4.5 V RG = 4.7 Ω (see test circuit, Figure 3) 28 400 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 20 7 10 27 nC nC nC Typ. Max. Unit VDD=24V I D=55A VGS=4.5V ns ns SWITCHING OFF Symbol td(off) tf Parameter turn-off Delay Time Fall Time Test Conditions Min. 25 50 VDD = 15 V ID = 27.5 A VGS = 4.5 V RG = 4.7 Ω (see test circuit, Figure 3) ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 55 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100 A/µs ISD = 55 A Tj = 150 °C VDD = 30 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 70 160 4.5 Max. Unit 55 220 A A 1.3 V ns nC A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limit ed by safe operating area. Safe Operating Area Thermal Impedance 3/8 STP55NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP55NF03L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature 5/8 STP55NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP55NF03L TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 0.70 0.019 D1 TYP. 1.27 E MAX. 0.050 0.49 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STP55NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A . http://w ww.st.com 8/8