STP16NE06 STP16NE06FP ® N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STP16NE06 STP16NE06FP 60 V 60 V < 0.100 Ω < 0.100 Ω 16 A 11 A ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 3 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP16NE06 V DS V DGR V GS Unit STP16NE06FP Drain-source Voltage (V GS = 0) 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 Gate-source Voltage V ID Drain Current (continuous) at T c = 25 o C ID Drain Current (continuous) at T c = 100 o C 10 7 A Drain Current (pulsed) 64 64 A IDM (•) 16 11 A Total Dissipation at T c = 25 o C 60 30 W Derating Factor 0.4 0.2 o W/ C V ISO Insulation Withstand Voltage (DC) dV/dt Peak Diode Recovery voltage slope P tot T stg Tj Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 ’ June 1998 2000 6 V V/ns -65 to 175 o C 175 o C (1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STP16NE06/FP THERMAL DATA R thj-case Thermal Resistance Junction-case Max R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 TO-220FP 2.5 5 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Parameter 16 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) 80 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Gate-body Leakage Current (V DS = 0) Typ. Max. 60 VGS = 0 Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Min. Unit V T c = 125 V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 8 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.080 0.100 Ω 16 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =8 A V GS = 0 Min. Typ. Max. 6 760 100 30 Unit S 1000 140 45 pF pF pF STP16NE06/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 30 V R G =4.7 W Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V Min. ID = 8 A V GS = 10 V I D = 16 A VGS = 10 V Typ. Max. Unit 10 35 80 40 ns ns 20 5 7 30 nC nC nC Typ. Max. Unit 7 18 30 10 25 45 ns ns ns Typ. Max. Unit 16 64 A A 1.5 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 48 V I D = 16 A R G =4.7 Ω V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 16 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A V DD = 30 V t rr Q rr I RRM Min. VGS = 0 di/dt = 100 A/µs o T j = 150 C 70 ns 0.21 µC 6 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP16NE06/FP Thermal Impedance for TO-220 Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP16NE06/FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP16NE06/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP16NE06/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 STP16NE06/FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/9 L4 STP16NE06/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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